AM1537CE ANALOGPOWER | Alldatasheet

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Technical content

N & P-Channel 30-V (D-S) MOSFET VDS (V) ID (A) 1.5 1.2 1.0 0.8 Symbol Nch Limit Pch Limit Units VDS 30 -30 VGS ±20 ±20 TA=25°C 1.5 1.0 TA=70°C 1.25 0.86 IDM 10 -10 IS 0.36 -0.35 A TA=25°C 0.3 0.3 TA=70°C 0.21 0.21 TJ, Tstg °C Symbol Maximum Units 415 460 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 190 @ VGS = -10V 290 @ VGS = -4.5V PRODUCT SUMMARY rDS(on) (mΩ) 90 @ VGS = 10V 130 @ VGS = 4.5V -30 Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 secMaximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range -55 to 150 V Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • DC/DC Conversion
  • Power Routing
  • Motor Drives SC70-6 © Preliminary 1 Publication Order Number: DS_AM1537CE_1A

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA (Nch) 1 V VDS = VGS, ID = -250 uA (Pch) -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±10 nA VDS = 24 V, VGS = 0 V (Nch) 1 VDS = -24 V, VGS = 0 V (Pch) -1 VDS = 5 V, VGS = 10 V (Nch) 1.8 A VDS = -5 V, VGS = -10 V (Pch) 1.2 A VGS = 10 V, ID = 1.1 A (Nch) 90 VGS = 4.5 V, ID = 0.88 A (Nch) 130 VGS = -10 V, ID = -0.8 A (Pch) 190 VGS = -4.5 V, ID = -0.64 A (Pch) 290 VDS = 15 V, ID = 1.1 A (Nch) 4 S VDS = -15 V, ID = -0.8 A (Pch) 3 S IS = 0.18 A, VGS = 0 V (Nch) 0.74 V IS = 0.175 A, VGS = 0 V (Pch) -0.79 V Total Gate Charge Qg 0.9 Gate-Source Charge Qgs 0.32 Gate-Drain Charge Qgd 0.30 Turn-On Delay Time td(on) 2 Rise Time tr 7 Turn-Off Delay Time td(off) 13 Fall Time tf 4 Input Capacitance Ciss 118 Output Capacitance Coss 20 Reverse Transfer Capacitance Crss 16 Total Gate Charge Qg 2.3 Gate-Source Charge Qgs 0.64 Gate-Drain Charge Qgd 0.75 Turn-On Delay Time td(on) 5 Rise Time tr 7 Turn-Off Delay Time td(off) 13 Fall Time tf 5 Input Capacitance Ciss 132 Output Capacitance Coss 23 Reverse Transfer Capacitance Crss 18 On-State Drain Current a Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Drain-Source On-Resistance a Diode Forward Voltage a Dynamic b nC N - Channel VDS = 15 V, RL = 12.5 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω ns Static

Electrical Characteristics

Forward Transconductance a gfs VGS(th) ID(on) IDSS rDS(on) VSD N - Channel VDS = 15 V, VGS = 4.5 V, ID = 1.2 A P - Channel VDS = -15 V, VGS = -4.5 V, ID = -0.8 A uA mΩ mΩ P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz pF N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz pF nC P - Channel VDS = -15 V, RL = 18.7 Ω, ID = -0.8 A, VGEN = -10 V, RGEN = 6 Ω ns © Preliminary 2 Publication Order Number: DS_AM1537CE_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - N-channel 0.1 0.2 0.3 0 1 2 3 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4V,4.5V,6V,8V,10V 3.5V 0 0.2 0.4 0.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V, 4.5V,4V 3.5V 0.1 0.2 0.3 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 200 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C ID = 1.2A © Preliminary 3 Publication Order Number: DS_AM1537CE_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - N-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05

0.02 P(pk)

D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 0.5 1 1.5 2 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 460 °C /W ID = 1.2A VDS = 15V © Preliminary 4 Publication Order Number: DS_AM1537CE_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics - P-channel 1000 0.1 0.2 0.3 0.4 0.5 0 0.5 1 1.5 2 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 4.5V,6V,8V,10V 3.5V 0.5 1.5 0 0.2 0.4 0.6 0.8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V,4.5V 3.5V 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.5 1.5 0 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 100 150 200 250 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = -0.8A © Preliminary 5 Publication Order Number: DS_AM1537CE_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation Typical Electrical Characteristics - P-channel 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 100 0.1 1 10 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) RθJA(t) = r(t) + RθJA 0.2 0.1 0.05 D = 0.5 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.5 1.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) 0 1 2 3 4 5 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) RθJA = 460 °C /W VDS = -15V ID = -0.8A © Preliminary 6 Publication Order Number: DS_AM1537CE_1A

Package Information

© Preliminary 7 Publication Order Number: DS_AM1537CE_1A