AM1535CE ANALOGPOWER | Alldatasheet

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Publication Order Number: DS-AM1535CE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) r DS(on) ( Ω) I D (A) 0.09 @ V GS = 4.5V 1.5 0.18 @ V GS = 2.5V 1.1 PRODUCT SUMMARY -30

  • Low r DS(on) provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe SC70-6 saves board space
  • Fast switching speed
  • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 30 -30 VGS 8 -8 TA=25 o C 1.5 1 TA=70 o C 1.3 0.8 IDM 0.7 -1.2 IS 0.25 -0.25 A TA=25 o C 0.3 0.3 TA=70 o C 0.21 0.21 TJ, T stg o C Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b VGate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units t <= 5 sec 415 Steady-State 460 THERMAL RESISTANCE RATINGS Parameter oC/W Maximum Junction-to-Ambient a RTHJA

Publication Order Number: DS-AM1535CE_A Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitabili ty of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifica tions can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals ” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use a s components in systems intended for surgical impla nt into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unaut horized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmles s against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i njury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Parameter Symbol Test Conditions Min Typ Max Unit VDS = V GS , I D = 250 uA (N-ch) 0.3 V VDS = V GS , I D = -250 uA (P-ch) -0.3 V Gate-Body Leakage IGSS VDS = 0 V, V GS = ±8 V ±10 uA VDS = 8 V, V GS = 0 V (N-ch) 1 VDS = -8 V, V GS = 0 V (P-ch) -1 VDS = 5 V, V GS = 4.5 V (N-ch) 1.5 A VDS = -5 V, V GS = -4.5 V (P-ch) -1.5 A VGS = 4.5 V, I D = 1.2 A (N-ch) 90 VGS = 2.5 V, I D = 0.96 A (N-ch) 180 VGS = -4.5 V, I D = -0.8 A (P-ch) 210 VGS = -4.5 V, I D = -0.64 A (P-ch) 290 VDS = 10 V, I D = 1.2 A (N-ch) 3 S VDS = -10 V, I D = -0.8 A (P-ch) 5 S IS = 0.2 A, V GS = 0 V (N-ch) 0.65 V IS = -1.2 A, V GS = 0 V (P-ch) -0.66 V Total Gate Charge Qg 5 Gate-Source Charge Qgs 0.3 Gate-Drain Charge Qgd 0.7 Turn-On Delay Time td(on) 8 Rise Time tr 13 Turn-Off Delay Time td(of f ) 25 Fall Time tf 8 Input Capacitance Ciss 73 Output Capacitance Coss 25 Rev erse Transfer Capacitance Crss 20 Total Gate Charge Qg 4 Gate-Source Charge Qgs 0.5 Gate-Drain Charge Qgd 0.9 Turn-On Delay Time td(on) 8 Rise Time tr 10 Turn-Off Delay Time td(of f ) 28 Fall Time tf 13 Input Capacitance Ciss 120 Output Capacitance Coss 28 Rev erse Transfer Capacitance Crss 25 VGS(th) uA P - Channel VDS = -15 V, V GS = 0 V, f = 1 MHz pF nC ID(on) IDSS rDS(on) mΩ mΩ P - Channel VDD = -10 V, R L = 12.5 Ω, ID = -0.8 A, VGEN = -4.5 V, R GEN = 6 Ω ns VSD Dynamic N - Channel VDS = 10 V, V GS = 4.5 V, I D = 1.2 A Forward Transconductance g f s Diode Forward Voltage P - Channel VDS = -10 V, V GS = 4.5 V, I D = -0.8 A nC N - Channel VDD = 10 V, R L = 8.3 Ω, ID = 1.2 A, VGEN = 4.5 V, R GEN = 6 Ω ns N - Channel VDS = 15 V, V GS = 0 V, f = 1 MHz pF Zero Gate Voltage Drain Current Drain-Source On-Resistance Static Gate-Source Threshold Voltage On-State Drain Current

Publication Order Number: DS-AM1535CE_A

Package Information

SC-70: 6LEAD