AM1331P ANALOGPOWER | Alldatasheet
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Publication Order Number: DS-AM1331_B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VD S (V ) r D S(on) (O H M ) I D (A ) 0.112 @ V G S = -10V -1.5 P R O D U C T SU M M A R Y -30 P-Channel 30-V (D-S) MOSFET
- Low r DS(on) provides higher efficiency and extends battery life
- Low thermal impedance copper leadframe SC70-3 saves board space
- Fast switching speed
- High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature D S G S y m b ol M a xim u m U n its VD S -3 0 VG S ± 2 0 TA= 25 o C -1.5 TA= 70 o C -1.2 ID M -2.5 IS ± 0 .2 8 A TA= 25 o C 0 .3 4 TA= 70 o C 0 .2 2 TJ, T stg -5 5 to 15 0 o C C o ntin u o u s S o u rce C u rren t (D io d e C o n d uctio n ) a A BSO LUTE MA XIM UM RA TIN GS (T A = 25 oC UNL ESS O THE RW IS E NO TED ) P a r am eter Pul sed D rain C u rren t b VG ate-S o u rce V o ltag e D rai n -S o u rce V o ltag e C o ntin u o u s D rai n C urren t a ID A Pow er D i ssi p ati on a PD O p eratin g Ju n ctio n an d S to rag e T em peratu re R an g e W S y m b ol M axim u m U n its t < = 5 sec 3 7 5 S tead y -S tate 4 3 0 THERM A L RESISTA NCE RA TING S P a ra m eter o C /W M ax im um Ju n cti o n -to-A m bi en t a RTH JA
Publication Order Number: DS-AM1331_B Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production test ing. c. Repetitive rating, pulse width limited by junction t emperature. Analog Power (APL) reserves the right to make changes without fu rther notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitabili ty of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifica tions can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as co mponents in systems intended for surgical implant i nto the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unaut horized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmles s against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i njury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. M in T y p M a x G ate-Threshold V oltage V GS(th) VDS = V GS , I D = -2 5 0 uA -1 V G ate-B ody L eak age I GSS VDS = 0 V , V GS = ±20 V ±100 nA VDS = -2 4 V , V GS = 0 V -1 VDS = -24 V , V G S = 0 V , T J = 55 oC -1 0 O n-State D rain C urrent A ID(on) VDS = -5 V , V GS = -1 0 V -5 A VGS = -1 0 V , I D = -1 .5 A 1 1 2 VGS = -4 .5 V , I D = -1 .2 A 1 7 2 Forw ard Tranconductance A gf s VDS = -5 V , I D = -1 .5 A 9 S D iode F orw ard V oltage V SD IS = -0 .4 6 A, V GS = 0 V -0 .6 5 V Total G ate C harge Q g 7 .2 G ate-Source C harge Q gs 1 .7 G ate-D rain C harge Q gd 1 .5 Turn-O n D elay T im e t d(on) 1 0 R ise T im e t r 9 Turn-O ff D elay T im e t d(of f ) 2 7 Fall-T im e t f 1 1 rDS(on) mΩ U n it VDD = -1 0 V , I L = -1 A, VGEN = -4 .5 V , R G = 6 Ω ns D yn a m ic b VDS = -1 0 V , V GS = -5 V , ID = -1 .5 A nC D rain-Source O n-R esistance A SP E C IF IC A T IO NS (T A = 25 oC U NL E SS O T H E RW ISE NO T E D) uA IDSS Zero G ate V oltage D rain C urrent Sta tic T est C ond itions S ym b ol P a r am eter L im its
Publication Order Number: DS-AM1331_B Typical Electrical Characteristics (P-Channel) Output Characteristics Transfer Characteristics On-Resistance vs. Junction Temperature Gate Charge Capacitance On-Resistance vs. Drain Current 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS =-10V -4.5V -3.0V 1.5 2 2.5 3 3.5 4 VG S - Gate-to-Source Voltage (V) ID - Drain Current (A) TA = -55 oC 25 oC 125 oC 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 ID - Drain Current (A) rDS(ON) , Normalized ON-Resistance -10V -4.5V -10 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage ( V ) 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( o rDS(ON) - On-Resistance (Normalized) VGS = -10V 200 400 600 800 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) CRSS COSS CISS
Publication Order Number: DS-AM1331_B Typical Electrical Characteristics (P-Channel) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse Power Threshold Voltage Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage 0.01 0.1 1 10 100 Time (sec) Power (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Rθ JA (t) = r(t) * R θ JA Rθ JA = 125 ° C/W TJ - T A = P * Rθ JA (t) Duty Cycle, D = t 1 / t P(pk SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 0.0001 0.001 0.01 0.1 VSD , - Source-to-Drain Voltage (V) IS - Source Current (A) TA = 125 oC 25 oC 0.1 0.2 0.3 0.4 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) rDS(ON) - On-Resistance (OHM) 1.2 1.4 1.6 1.8 2.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature ( oC) VGS(th) Variance (V) ID = -250 µ A
Publication Order Number: DS-AM1331_B