AM12N50P ANALOGPOWER | Alldatasheet

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Technical content

N-Channel 500-V (D-S) MOSFET VDS (V) ID (A) 500 12a Symbol Limit Units VDS 500 VGS ±20 Continuous Drain Current a TC=25°C ID 12 IDM 50 IS 12 A Power Dissipation TC=25°C PD 150 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 1 Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A PRODUCT SUMMARY rDS(on) (mΩ) 520 @ VGS = 10V Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage Key Features:

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Typical Applications:
  • Off-line Power Supplies
  • Electronic Ballasts
  • High Power LED Lighting DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM12N50P_1A

Parameter Symbol Test Conditions Min Typ Max Unit Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 400 V, VGS = 0 V 1 VDS = 400 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 6 A 520 mΩ Forward Transconductance a gfs VDS = 15 V, ID = 6 A 38 S Diode Forward Voltage a VSD IS = 6 A, VGS = 0 V 0.9 V Total Gate Charge Qg 44 Gate-Source Charge Qgs 12 Gate-Drain Charge Qgd 12 Turn-On Delay Time td(on) 25 Rise Time tr 11 Turn-Off Delay Time td(off) 71 Fall Time tf 13 Input Capacitance Ciss 2396 Output Capacitance Coss 147 Reverse Transfer Capacitance Crss 31 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Dynamic b ns Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Zero Gate Voltage Drain Current Static uA

Electrical Characteristics

VDS = 250 V, RL = 50 Ω, ID = 6 A, VGEN = 10 V, RGEN = 6 Ω VDS = 250 V, VGS = 10 V, ID = 6 A pFVDS = 15 V, VGS = 0 V, f = 1 Mhz © Preliminary 2 Publication Order Number: DS_AM12N50P_1A

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance Typical Electrical Characteristics 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0 1 2 3 4 5 RDS(on) - On-Resistance(Ω) ID-Drain Current (A) 6V,8V,10V 5.5V 0 1 2 3 4 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10V,8V,6V 5.5V 0 2 4 6 8 10 RDS(on) - On-Resistance(Ω) VGS - Gate-to-Source Voltage (V) TJ = 25°C TJ = 25°C 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TJ = 25°C 0.01 0.1 100 0.2 0.4 0.6 0.8 1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25°C 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 Capacitance (pf) VDS-Drain-to-Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 6A © Preliminary 3 Publication Order Number: DS_AM12N50P_1A
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient Typical Electrical Characteristics 0 10 20 30 40 50 VGS-Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 0.01 0.1 100 1000 0.1 1 10 100 1000 10000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 1 10 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on) - On-Resistance(Ω) (Normalized) TJ -JunctionTemperature(°C) P(pk) RθJA = 62.5 °C /W VDS = 100V ID = 6A © Preliminary 4 Publication Order Number: DS_AM12N50P_1A

Package Information

© Preliminary 5 Publication Order Number: DS_AM12N50P_1A