ALT6526 ANADIGICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 17
Technical content
Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier DATA SHEET - Rev 2.5 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module Figure 1: Block Diagram
FEATURES
- LTE, WCDMA/HSPA & CDMA/EVDO
Applications
- High Output Power
- ≥ +27.3 dBm in LTE
- ≥ +28.6 dBm in WCDMA (R99)
- ≥ +27.5 dBm in CDMA (RC1)
- High Efficiency
- 40% in high power mode (WCDMA mode)
- Low profile 5 mm x 7 mm x 0.9 mm package
- 2 input ports, 5 output ports, all matched to 50 Ω impedance
- Integrated voltage regulator
- Built-in Directional Coupler
- Internal DC block on IN/OUT RF ports
- Low leakage in shutdown mode
- ESD Protection on all pins
- RoHS-compliant package, MSL-3, 260°C
- LTE, WCDMA/HSPA handsets and data devices operating in UMTS Bands 1, 2, 3, 4, 5, 8, 9,10, 18, 19, 20, 25, and 26
- CDMA/EV-DO handsets and data devices operating in Band Class 0, 1, 4, 6, 8, 10, 14G and 15 PRODUCT DESCRIPTION The ALT6526 Power Amplifier module is designed for 3G/4G handsets, smartphones, modems and modules operating in LTE, WCDMA/HSPA and CDMA/EVDO modes. The module includes separate InGaP HBT amplifier chains - one to support 850/900 bands, the other for 1700/1900/2100MHz bands. An innovative design allows the module to switch output among as many as 5 different frequency bands. Both the input and output RF ports are internally matched to 50 Ω. The ALT6526 offers improved efficiency and low quiescent current, and includes integrated daisy chained couplers to simplify board design and layout. ALT6526
DATA SHEET - Rev 2.5 ALT6526 Figure 2: Pinout (X-ray Top View) Table 1: Pin Description NAME DESCRIPTIONPINP IN NAME DESCRIPTION
1 RFIN_HI
12 RFOUT_900 RF Output for 900 MHz Band
2 GND Ground 13 RFOUT_850 RF Output for 850 MHz Band
3V BATT Battery Voltage 14 GND Ground 4V CC1 Supply Voltage 15 VCC Supply Voltage 5V EN_HI Enable Voltage for High Bands 16 VCC Supply Voltage 6V BAND0 Low Band Select Voltage 17 VCC Supply Voltage 7V BAND1 High Band Select Voltage 18 CPL_OUT Coupler Output Port 8V MODE Mode Control Voltage 19 GND Ground 9V EN_LO Enable Voltage for Low Bands 20 RFOUT_1900 RF Output for 1900 MHz Band
10 GND Grounds 21 RFOUT_1700 RF Output for 1700 MHz Band
11 RFIN_LO RF input for 850/900 MHz Bands 22 RFOUT_2100 RF Output for 2100 MHz Band
RFOUT_2100 RFOUT_1700 RFIN_HI GND CPLOUTVEN_HI VBATT GND VCC1 RFOUT_1900 VCC VCC GND RFOUT_850 VCC VBAND0 GND VMODE VBAND1 VEN_LO RFIN_LO RFOUT_900
DATA SHEET - Rev 2.5 ALT6526
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. PARAMETER MIN MAX UNIT Supply Voltage (VBATT, VCC, VCC1)0 +5 V Control Voltages (VMODE, VBAND0/1)0 +3.5 V Enable Voltages (VEN_HI, VEN_LO)0 +3.5 V Input RF power (RFIN_HI, RFIN_LO)- +10d Bm Storage temperature- 40 +150 /c5243C Table 3: DC Operating Parameters PARAMETER MIN TYP MAX UNIT COMMENTS Supply Voltage (VCC & VCC1) +0.7 +3.3 +4.35 V Supply Voltage (VBATT) +2.9 +3.3 +4.35 V Control Voltages (VMODE, VBAND0/1) +1.35 +1.8 +3.1 +0.4 V Select High State Select Low State Enable Voltage (V EN_HI, VEN_LO) +1.35 +1.8 +3.1 +0.4 V Select High State Select Low State Mode Control Current - <0.1 0.12 mA through V MODE pin, VMODE = +1.8 V Enable Current - <0.1 0.12 mA through VEN_HI, VEN_LO BAND Control Current - <0.1 0.12 mA through VBAND0 or VBAND1 pins BATT Current - 2.3 5 mA through VBATT pin, VMODE = +1.8 V Leakage Current (total) - <5 11 µA VBATT = +4.5 V, VCC = +4.5 V, Shutdown Mode (All V BATT & VCC Pins)
DATA SHEET - Rev 2.5 ALT6526 Table 4: RF Operating Ranges The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operations at 3.2 V or 105 8C, P OUT is derated by 0.6 dB. (3) LTE waveform characteristics: up to 20 MHz BW, QPSK, RB = 18. PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 816 814 880 1710 1850 1920 849 862 915 1785 1915 1980 MHz UMTS Band 5, 19, BC 0, BC 10 UMTS Band 18, 20, 26 UMTS Band 8 UMTS Band 3, 4, 9, 10, BC 4, 8, 15 UMTS Band 2 & 25, BC 1 & 14G UMTS Band 1, BC 6 Output Power (UMTS) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM (3) R99, HPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM (3) LTE (MPR = 0), HPM (3) LTE (MPR = 0), LPM (3) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM (3) R99, LPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM (3) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM R99, LPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM +28.0 (1) +26.9 (1) +26.8 (1) +10.0 (1) +9.0 (1) +9.0 (1) +26.7 +9.0 +28.4 (1) +27.3 (1) +27.1 (1) +10.0 (1) +9.0 (1) +9.0 (1) +28.1 (1) +27.0 (1) +26.9 (1) +10.0 (1) +9.0 (1) +9.0 (1) +28.6 +27.5 +27.4 +10.6 +9.6 +9.6 +27.3 +9.6 +29.0 +27.9 +27.7 +10.6 +9.6 +9.6 +28.7 +27.6 +27.5 +10.6 +9.6 +9.6 dBm UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 18, 20, 26 UMTS Band 18, 20, 26 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 CDMA Output Power CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM +27.1 (1) +9.0 (1) +26.9 (1) +9.0 (1) +27.5 (1) +9.0 (1) +27.7 +9.6 +27.5 +9.6 +28.1 +9.6 dBm Band Class 4, 6, 8, 15 Band Class 0, 10 Band Class 1, 14G Case Temperature (T C) -40 - +105 8C
DATA SHEET - Rev 2.5 ALT6526 Table 4a: Electrical Specifications - Band 1 (2100 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VCC VMODE Gain 28.5 32.5 dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V E-UTRA at ± 10 MHz offset -38 -41 -40 -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR1 at ± 7.5 MHz offset (1) -39 -40 -41 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR2 at ± 12 MHz offset -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V Efficiency (1) 30.5 3.5 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0 V +1.8 V Quiescent Current - 40 - mA through V CC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -135 - dBm/Hz 2110 - 2170 MHz GPS Noise - -137 - dBm/Hz POUT ≤ 27.4 dBm ISM Noise - -145 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band GPS Band ISM Band G - 2.8 G - 2.4 G - 8 dB G = In-band Gain Harmonics O 3fO, 4fO -42 -50 -30 -35 dBc Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc See note 2. Load mismatch stress with no permanent degradation or failure 8:1 - - VSWR Applies over full operating range Coupling factor - 27.5 - dB
DATA SHEET - Rev 2.5 ALT6526 Table 4b: Electrical Specifications - Band 1 (2100 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) Table 4c: Electrical Specifications - Band Class 6 (2100 MHz) CDMA 2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) Notes (Applicable to Tables 4a, 4b and 4c): (1) ACLR and Efficiency measured at 1950 MHz. (2) P OUT < +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz -51 -51 -46.5 -46.5 dBc +27.7 dBm +9.6 dBm 0 V 1.8 V Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz -57 <-60 -54 -54 dBc +27.7 dBm +9.6 dBm 0 V 1.8 V PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V ACLR2 at 10 MHz offset - -55 <-60 -48 -48 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V Efficiency (1) 35 - % +28.6 dBm +10.6 dBm 0 V 1.8 V
DATA SHEET - Rev 2.5 ALT6526 Table 5a: Electrical Specifications - Band 2/25 (1900 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VCC VMODE Gain 25.5 28.5 13.5 16.5 dB +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V E-UTRA at ± 10 MHz offset -38 -42 -40 -34 -34 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR1 at ± 7.5 MHz offset (1) -39 -43 -41 -36 -36 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR2 at ± 12 MHz offset -60 -60 -60 -40 -40 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V Efficiency (1) 30.5 3.5 - % +27.7 dBm +9.6 dBm 3.3 V 3.3 V 0 V +1.8 V Quiescent Current - 40 - mA through V CC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -135 - dBm/Hz 1930 - 1990 MHz GPS Noise - -137 - dBm/Hz POUT ≤ 27.7 dBm ISM Noise - -149 - dBm/Hz POUT ≤ 27.7 dBm Out of Band Gain Rx Band GPS Band ISM Band G - 0.5 G - 0.8 G - 8 dB G = In-band Gain Harmonics O 3fO, 4fO -40 -46 -35 -35 dBc Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc See note 2 Load mismatch stress with no permanent degradation or failure 8:1 - - VSWR Applies over full operating range Coupling factor - 29 - dB
DATA SHEET - Rev 2.5 ALT6526 Table 5b: Electrical Specifications - Band 2/25 (1900 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) Table 5c: Electrical Specifications - Band Class 1 (1900 MHz) CDMA2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) Notes (Applicable to Tables 5a, 5b and 5c): (1) ACLR and Efficiency measured at 1882.5 MHz. (2) Pout ≤ 27.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR ≤ 10:1. Applies over all operating conditions PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz -52 -51 -46.5 -46.5 dBc +28.1 dBm +9.6 dBm 0 V 1.8 V Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz -57 <-60 -54 -54 dBc +28.1 dBm +9.6 dBm 0 V 1.8 V PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 dBc +29.0 dBm +10.6 dBm 0 V 1.8 V ACLR2 at 10 MHz offset - -53 <-60 -48 -48 dBc +29.0 dBm +10.6 dBm 0 V 1.8 V Efficiency (1) 35 - % +29.0 dBm +10.6 dBm 0 V 1.8 V
DATA SHEET - Rev 2.5 ALT6526 Table 6a: Electrical Specifications - Band 3/4 (1700 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VCC VMODE Gain 28.5 32.5 dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V E-UTRA at ± 10 MHz offset -38 -39 -40 -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR1 at ± 7.5 MHz offset (1) -39 -40 -41 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR2 at ± 12 MHz offset -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V Efficiency (1) 30.5 3.5 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0 V +1.8 V Quiescent Current - 40 - mA through V CC1 + VCC2 pins, VMODE = 1.8 V Noise in Receive Band - -135 -142 - dBm/Hz 1805 - 1880 MHz 2110 - 2155 MHz GPS Noise - -134 - dBm/Hz P OUT ≤ 27.4 dBm ISM Noise - -149 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band (B3) Rx Band (B4) GPS Band ISM Band G G - 2 G - 1 G - 10 dB G = In-band Gain Harmonics O 3fO, 4fO -42 -55 -30 -35 dBc P OUT ≤ +27.4 dBm Input Impedance - 2:1 - VSWR Suprious Output Level (all spurious outputs) - - -70 dBc See note 2. Load mismatch stress with no permanent degradation or failure 8:1 - - VSWR Applies over full operating range Coupling factor - 28.5 - dB
DATA SHEET - Rev 2.5 ALT6526 Table 6b: Electrical Specifications - Band 3/4 (1700 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) Table 6c: Electrical Specifications - Band Class 8 (1700 MHz) CDMA Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) Notes (Applicable to Tables 6a, 6b and 6c): (1) ACLR and Efficiency measured at 1747.5 MHz. (2) P OUT < +28.6 dBm; In-band load VSWR < 5:1; Out-of-band load VSWR < 10:1; Applies over all operating conditions. PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz -52 -52 -46.5 -46.5 dBc +27.7 dBm +9.6 dBm 0 V 1.8 V Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz -57 <-60 -54 -54 dBc +27.7 dBm +9.6 dBm 0 V 1.8 V PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V ACLR2 at 10 MHz offset - -55 <-60 -48 -48 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V Efficiency (1) 35 - % +28.6 dBm +10.6 dBm 0 V 1.8 V
DATA SHEET - Rev 2.5 ALT6526 Table 7a: Electrical Specifications - Band 5 (850 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VCC VMODE Gain 25.5 31.5 16.5 dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V E-UTRA at ± 10 MHz offset -38 -41 -40 -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR1 at ± 7.5 MHz offset (1) -39 -42 -40 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR2 at ± 12 MHz offset -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V Efficiency (1) 30.5 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0 V +1.8 V Quiescent Current - 35 - mA through V CC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -132 -136 - dBm/Hz 741 - 821 MHz (2) 862 - 894 MHz GPS Noise - -158 - dBm/Hz POUT ≤ 27.4 dBm ISM Noise - -160 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band GPS Band ISM Band G - 0.7 G - 40 G - 50 dB G = In-band Gain Harmonics O 3fO, 4fO -44 -50 -35 -35 dBc P OUT ≤ +27.4 dBm Input Impedance - 2:1 - VSWR Suprious Output Level (all spurious outputs) - - -70 dBc See note 3. Load mismatch stress with no permanent degradation or failure 8:1 - - VSWR Applies over full operating range Coupling factor - 27.5 - dB
DATA SHEET - Rev 2.5 ALT6526 Table 7c: Electrical Specifications - Band Class 0/10 (850 MHz) CDMA2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) Notes (Applicable to Tables 7a, 7b and 7c): (1) ACLR and Efficiency measured at 833 MHz. (2) TS36.101, Table 7.3.1-2 (3) P OUT < +28.6 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. Table 7b: Electrical Specifications - Band 5 (850 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE Adjacent Channel Power (1) at ± 885KHz offset Primary Channel BW = 1.23 MHz -51 -50 -46.5 -46.5 dBc +27.5 dBm +9.6 dBm 0 V 1.8 V Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz -60 <-63 -57 -57 dBc +27.5 dBm +9.6 dBm 0 V 1.8 V PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE ACLR1 at 5 MHz offset (1) - -41 -41 -37 -37 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V ACLR2 at 10 MHz offset - -57 <-60 -48 -48 dBc +28.6 dBm +10.6 dBm 0 V 1.8 V Efficiency (1) 34 - % +28.6 dBm +10.6 dBm 0 V 1.8 V
DATA SHEET - Rev 2.5 ALT6526 Table 8a: Electrical Specifications - Band 8 (900 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V) PARAMETER MIN TYP MAX UNIT COMMENTS POUT VCC VMODE Gain 25.5 9.5 12.5 31.5 dB +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V E-UTRA at ± 10 MHz offset -38 -39 -39 -34 -34 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR1 at ± 7.5 MHz offset (1) -39 -40 -41 -36 -36 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V ACLR2 at ± 12 MHz offset -60 -60 -60 -40 -40 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0 V 0 V +1.8 V Efficiency (1) 30.5 - % +27.5 dBm +9.6 dBm 3.3 V 3.3 V 0 V +1.8 V Quiescent Current - 35 - mA through V CC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -136 - dBm/Hz 925 - 960 MHz GPS Noise - -160 - dBm/Hz POUT ≤ 27.5 dBm ISM Noise - -160 - dBm/Hz POUT ≤ 27.5 dBm Out of Band Gain Rx Band GPS Band ISM Band G - 0.5 G - 30 G - 50 dB G = In-band Gain Harmonics O 3fO, 4fO -42 -50 -30 -35 dBc P OUT ≤ +27.5 dBm Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc See note 2. Load mismatch stress with no permanent degradation or failure 8:1 - - VSWR Applies over full operating range Coupling factor - 27.5 - dB
DATA SHEET - Rev 2.5 ALT6526 Table 8b: Electrical Specifications - Band 8 (900 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V) Notes (Applicable to Tables 8a and 8b): (1) ACLR and Efficiency measured at 897.5 MHz. (2) P OUT < +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. PARAMETER MIN TYP MAX UNIT COMMENTS POUT VMODE ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 dBc +28.7 dBm +9.6 dBm 0 V 1.8 V ACLR2 at 10 MHz offset - -56 <-60 -48 -48 dBc +28.7 dBm +9.6 dBm 0 V 1.8 V Efficiency (1) 34 39 - - % +28.7 dBm +9.6 dBm 0 V 1.8 V4
DATA SHEET - Rev 2.5 ALT6526 Table 9: Logic Interface Specifications Figure 3: Evaluation Board LOGIC PROGRAMMING
APPLICATION INFORMATION
RF OU T_ 2100 RF OU T_ 1700 RF IN _H I GN D CP L OU T V BATT GN D G ND SL UG RF OU T_ 1900 V CC V CC GN D RF OU T_ 850 V CC V BAND 0 GN D V MO DE V BAND 1 V EN _L O RF IN _L O RF OU T_ 900 68p F 2.2u F 0.01µF C268p F V BAT T V CC1 V CC V CC1 V EN _H I 0.01µF2.2µF 2.2µF MODE OF OPERATION VEN_HI VEN_LO VBAND0 VBAND1 VMODE UMTS Band 1, CDMA BC 6H ighL ow Low Low X UMTS Band 2 & 25 CDMA BC 1, 6, 14G High LowL ow High X High LowH igh Low X LowH ighH ighH ighX UMTS Band 8L ow High Low Low X Standby Mode LowL ow XX X Shutdown Mode LowL ow Low Low X High Power Mode (HPM)X XXX Low Low Power Mode (LPM)X XX XH igh UMTS Band 3, 4, 9, 10 CDMA BC 4, 8, 15 UMTS Band 5, 18, 19, 20, 26 BC 0, 10
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. iMPOrTanT nOTiCE anaDigiCS
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. DATA SHEET - Rev 2.5 ALT6526
ORDERING INFORMATION
DESCRIPTION COMPONENT PACKAGING ALT6526P8- 40 oC to +105 oC RoHS Compliant 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel ALT6526P9- 40 oC to +105 oC RoHS Compliant 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module Partial Tape and Reel