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Document overview
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Technical content
Features
Very Low Noise Figure High Power Switch design 50 dB isolation between LNA1_Out and LNA2_In Small package size 8.0 x 8.0 x 1.2 mm3 GaAs E-pHEMT Technology [1] Low Distortion Silicon PIN Diode Technology MSL 2a and Lead-free Specifi cations Typical Performance at 1.90 GHz (Rx mode) 39.5 dB Gain 0.80 dB Noise Figure 36.4 dBm Output IP3 Typical Performance at 1.90 GHz (Tx mode) 0.27 dB insertion loss 40 dB Ant to LNA1 Isolation
Applications
High power switch LNA module for TD-SCDMA and TD-LTE base station front-end RF application. Block Diagram with Simplifi ed Schematic Note: Package marking provides orientation and identifi cation “12124” = Device Part Number “WWYY” = Work week and year of manufacture “XXXX” = Last 4 digit of lot number Notes: 1. Enhancement mode technology employs positive Vgs, thereby elimi- nating the need of negative gate voltage associated with conven- tional depletion mode devices. AVAGO 12124 WWYY XXXX Vbias Vc 1 Gnd Gnd Gnd Gnd Gnd Gnd Gnd Rx Out Gnd Pin 1 Ant Gnd Vc 2 Vg Vdd1 Gnd Gnd Tx LNA2 _In Gnd Gnd Gnd Gnd LNA1 _Out TOP VIEW BOTTOM VIEW Tx Ant Vbias Vc2 Vc1 Vdd2 Vdd1 LNA1_Out LNA2_In Rx Out Vg C10 L1Switch bias circuitry External 50 ohm termination PA
Absolute Maximum Rating [1] TA = 25° C Symbol Parameter Units Absolute Max. Vc1,max Device Control Voltage 1 (At Rx mode) V3 0 Ic1 ,max Device Control Current 1 (At Rx mode) mA 57 Vc2,max Device Control Voltage 2 (At Tx mode) V3 0 Ic2,max Device Control Current 1 (At Tx mode) mA 57 Vbias Device Bias Voltage V 5.5 Vdd1,2 Device Voltage, RF output to ground V 5.5 Vg Gate Voltage V 0.7 P in,max Ant CW RF Input Power (Tx mode); 5 mins testing dBm +47.5 Pin,max Ant CW RF Input Power (Rx mode) (Vdd = 5.0 V, Idd1 = 50 mA) dBm +20 Pin,max LNA2_In CW RF Input Power (Vdd = 5.0 V, Idd2 = 120 mA) dBm +25 Rx Pdiss Rx mode Total Power Dissipation [3] LNA1 W 0.3 Rx mode Total Power Dissipation [3] LNA2 W 0.5 Tx Pdiss Tx mode Total Power Dissipation W 8.70 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Tamb Ambient Temperature °C -40 to 85 Rx mode Thermal Resistance [2] LNA1: Vdd1 = 5.0 V, Idd1 = 50 mA LNA2: Vdd2 = 5.0 V, Idd2 = 120 mA; LNA1 jc = 72.4°C/W LNA2 jc = 65.0°C/W Tx mode Thermal Resistance [2] LNA1: Vdd1 = 5.0 V, Idd1 = 50 mA LNA2: Vdd2 = 5.0 V, Idd2 = 120 mA; jc = 11.7°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red Measurement Technique. 3. Power dissipation in Rx mode with both LNA1 and LNA2 turned on. Board temperature T B is 25° C. LNA1: Derate at 14 mW/°C for T B > 114° C. LNA2: Derate at 15.6 mW/°C for T B > 92° C. 4. Switch Turn On Condition: Tx mode: Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V Rx mode: Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V Rx/Tx Switch Operating Truth Table [1] Mode Vbias (V) Vc1 (V) Vc2 (V) Rx (Ant – Rx) 5 28 0 Tx (Ant – Tx) 5 0 28 Note: 1. Any state other than described above in the truth table may cause permanent damage to the device.
Electrical Specifi cations [1] Rx Mode TA = 25° C, Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Vdd1= 5 V, Vdd2 = 5 V, RF performance at 1.90 GHz, measured on demo board unless otherwise specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ibias Vbias current mA – 51.3 – Ic1 Vc1 current mA – 0.0 – Ic2 Vc2 current mA – -51.0 – Idd1 Vdd1 current mA – 55.1 – Idd2 Vdd2 current mA – 121.3 – Total Current Total max current consumption ( Ibias + Idd1 + Idd2 ) mA – 227.7 – NF Noise Figure dB – 0.80 – Gain Gain dB – 39.5 – OIP3 [2] Output Third Order Intercept Point dBm – 36.4 – OP1dB Output Power at 1 dB Gain Compression dBm – 23.5 – Isolation Isolation (LNA1_output to LNA2_input) dB – 52.8 – Rx Out RL LNA2 Output Return Loss dB – 16.1 – Ant RL Antenna Input Return Loss dB – 20.8 – Tx Mode TA = 25° C, Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, RF performance at 1.90 GHz, measured on demo board unless otherwise specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ibias Vbias current mA – 41.0 – Ic1 Vc1 current mA – -51.0 – Ic2 Vc2 current mA – 10.0 – Tx Ant IL Tx Antenna Insertion Loss dB – 0.27 – Max Input Power [4] 50 W CW power (5 mins testing) at Antenna port dBm – – 47.5 Ant RL Antenna Input Return Loss dB – 23.6 – Notes: 1. Measurements at 1.90 GHz obtained using demo board described in Figure 12. 2. OIP3 test condition: F RF1 = 1.90 GHz and FRF2 = 1.901 GHz with input power of -25 dBm per tone measured at worst side band. 3. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. 4. Max Input Power was characterized during the product development stage. It is not fi nal tested at production.
Electrical Specifi cations [1] Rx Mode TA = 25° C, Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Vdd1 = 5 V, Vdd2 = 5 V, RF performance at 2.018 GHz, measured on demo board unless otherwise specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ibias Vbias current mA 42.0 51.3 60.0 Ic2 Vc2 current mA -60.0 -51.2 -42.0 Idd1 Vdd1 current mA 33.0 55.0 60.0 Idd2 Vdd2 current mA 97.0 121.4 130.0 Total Current Total max current consumption ( Ibias + Idd1 + Idd2 ) mA – 227.7 250 NF Noise Figure dB – 0.85 1.1 Gain Gain dB 35 39.0 – OIP3 [2] Output Third Order Intercept Point dBm 35 36.5 – OP1dB Output Power at 1 dB Gain Compression dBm 22 23.5 – Isolation Isolation (LNA1_output to LNA2_input) dB – 50.2 – Rx Out RL LNA2 Output Return Loss dB – 17.9 – Ant RL Antenna Input Return Loss dB – 15.6 – Tx Mode TA = 25° C, Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, RF performance at 2.018 GHz, measured on demo board unless otherwise specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ibias Vbias current mA 32.0 41.0 – Ic1 Vc1 current mA – -51.0 – Ic2 Vc2 current mA – 10.0 – Tx Ant IL Tx Antenna Insertion Loss dB – 0.30 0.55 Max Input Power [4] 50 W CW power (5 mins testing) at Antenna port dBm – – 47.5 Ant RL Antenna Input Return Loss dB – 20.7 – Notes: 1. Measurements at 2.018 GHz obtained using demo board described in Figure 12. 2. OIP3 test condition: F RF1 = 2.018 GHz and FRF2 = 2.019 GHz with input power of -25 dBm per tone measured at worst side band. 3. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. 4. Max Input Power was characterized during the product development stage. It is not fi nal tested at production.
(Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Tc = 25° C, matched 50 ) Freq GHz S11 S11 S12 S12 S13 S13 S21 S21 S22 S22 S23 S23 S31 S31 S32 S32 S33 S33 Note: 1. Port connection: Port 1 = Ant, Port 2 = Rx_Out and Port 3 = Tx
(Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, Tc = 25° C, matched 50 ) Freq GHz S11 S11 S12 S12 S13 S13 S21 S21 S22 S22 S23 S23 S31 S31 S32 S32 S33 S33 Note: 1. Port connection: Port 1 = Ant, Port 2 = Rx_Out and Port 3 = Tx
Figure 12. Demo Board Layout Diagram – Recommended PCB material is 20 mils Rogers RO4350. – Suggested component values may vary according to layout and PCB material. – Optional LNA1_out and LNA2_In traces are electrically disconnected.
14 Pin
Table 1. Component list for 1.90 GHz Figure 13. Demo Board Schematic Diagram matching
Part Number Ordering Information Part # Qty Container ALM-12124-BLKG 100 Antistatic Bag ALM-12124-TR1G 1000 13” Reel
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20.2 Min
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13+/0.20 Arbor Hole 100+/0.50 Hub Dia. Measured At Hub Measured At Hub Measured At Outer Edge TAPE WIDTH W3 16 mm 15.9 Min
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16.4 +2.0 0.0 T 7 ±0.50