ALD810020 ALD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

E ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION The ALD810020/ALD910020 are members of the ALD8100xx (quad) and ALD9100xx (dual) family of Supercapacitor Auto Bal- ancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built with production proven EPAD ® technology and are designed to ad- dress voltage and leakage-current balancing of supercapacitors connected in series. Supercapacitors, also known as ultracapacitors or supercaps, connected in series can be leakage-current balanced by using a combination of one or more devices connected across each supercapacitor stack to prevent over-voltages. The ALD810020 offers a set of unique, precise operating voltage and current characteristics for each of four SAB MOSFET devices, as shown in its Operating Electrical Characteristics table. It can be used to balance up to four supercapacitors connected in series. The ALD910020 has its own set of unique precision Operating Elec- trical Characteristics for each of its two SAB MOSFET devices, suitable for up to two series-connected supercapacitors. Each SAB MOSFET features a precision gate threshold voltage in the V t mode, which is 2.00V when the gate-drain source terminals (VGS = VDS) are connected together at a drain-source current of IDS(ON) = 1µA. In this mode, input voltage VIN = VGS = VDS. Dif- ferent VIN produces an Output Current IOUT = IDS(ON) character- istic and results in an effective variable resistor that varies in value exponentially with V IN. This V IN, when connected across each supercapacitor in a series, balances each supercapacitor to within its voltage and current limits. When V IN = 2.00V is applied to an ALD810020/ALD910020, its IOUT is 1µA. For a 100mV increase in VIN, to 2.10V, IOUT increases by about tenfold. For an additional increase in VIN to 2.22V for the ALD910020 (2.24V for the ALD810020), IOUT increases one hun- dredfold, to 100 µA. Conversely, for a 100mV decrease in V IN to 1.90V, IOUT decreases to one tenth of its previous value, to 0.1µA. Another 100mV decrease in input voltage would reduce I OUT to 0.01µA. Hence, when an ALD810020/ALD910020 SAB MOSFET is connected across a supercapacitor that charges to less than 1.80V, it would dissipate essentially no power. (Continued on next page) QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™ ) MOSFET ARRAY ALD810020/ALD910020 FEATURES & BENEFITS

  • Simple and economical to use
  • Precision factory trimmed
  • Automatically regulates and balances leakage currents
  • Effective for supercapacitor charge-balancing
  • Balances up to 4 supercaps with a single IC package
  • Balances 2-cell, 3-cell, 4-cell series-connected supercaps
  • Scalable to larger supercap stacks and arrays
  • Near zero additional leakage currents
  • Zero leakage at 0.3V below rated voltages
  • Balances series and/or parallel-connected supercaps
  • Leakage currents are exponential function of cell voltages
  • Active current ranges from <0.3nA to >1000µA
  • Always active, always fast response time
  • Minimizes leakage currents and power dissipation *IC pins are internally connected, connect to V- PIN CONFIGURATIONS SAL PACKAGE ALD910020 GN1 DN1 SN1 IC* GN2 DN2 SN2, V- SCL PACKAGE ALD810020 DN1 GN1 IC* DN4 SN4 GN4 SN1 8 9 DN2 GN2 IC* DN3 SN3 GN3 SN2 V-V- M2M1 M4 M3 V-V-

APPLICATIONS

  • Series-connected supercapacitor cell leakage balancing
  • Energy harvesting
  • Long term backup battery with supercapacitor outputs
  • Zero-power voltage divider at selected voltages
  • Matched current mirrors and current sources
  • Zero-power mode maximum voltage limiter
  • Scaled supercapacitor stacks and arrays PRODUCT FAMILY SPECIFICATIONS For more information on supercapacitor balancing, how SAB MOSFETs achieve automatic supercapacitor balancing, the device characteristics of the SAB MOSFET family, product family product selection guide, applications, configurations, and package infor- mation, please download from www.aldinc.com the document: “ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balanc- ing (SAB™) MOSFET ARRAYs”

ORDERING INFORMATION

(“L” suffix denotes lead-free (RoHS)) Operating Temperature Range Package 0 °C to +70°C -40 °C to +85°C (Commercial) (Industrial) 16-Pin SOIC ALD810020SCL ALD810020SCLI 8-Pin SOIC ALD910020SAL ALD910020SALI

ALD810020/ALD910020 Advanced Linear Devices, Inc. 2 of 6 SCHEMATIC DIAGRAM OF A TYPICAL CONNECTION FOR A TWO-SUPERCAP STACK 1-8 DENOTES PACKAGE PIN NUMBERS C1-C2 DENOTES SUPERCAPACITORS 3, 8 1, 5 ALD9100XX V+ ≤ +15.0V IDS(ON) ≤ 80mA SCHEMATIC DIAGRAM OF A TYPICAL CONNECTION FOR A FOUR-SUPERCAP STACK 1-16 DENOTES PACKAGE PIN NUMBERS C1-C4 DENOTES SUPERCAPACITORS V+ ≤ +15.0V 1, 5, 8, 16 2, 12 ALD8100XX C1M1 IDS(ON) ≤ 80mA GENERAL DESCRIPTION (CONT.) The voltage dependent characteristic of the ALD810020/ ALD910020 on-resistance is effective in controlling excessive volt- age rise across a supercapacitor when connected across it. In se- ries-connected supercapacitor stacks, when one supercapacitor voltage rises, the voltage of the other supercapacitors drops, with the ones that have the highest leakage currents having the lowest supercapacitor voltages. The SAB MOSFETs connected across these supercapacitors would exhibit complementary opposing cur- rent levels, resulting in little additional leakage currents other than those caused by the supercapacitors themselves. For technical assistance, please contact ALD technical support at techsupport@aldinc.com. APPLYING THE ALD810020/ALD910020: 1) Select a maximum supercapacitor leakage current limit for any supercapacitor used in the stack. This is the same as output cur- rent, I OUT = IDS(ON), of the ALD810020/ALD910020. Test that each supercapacitor leakage current meets this maximum current limit before use in the stack. 2) Determine whether the input voltage V IN (VGS = VDS) at that IOUT is acceptable for the intended application. This voltage is the same voltage as the maximum desired operating voltage of the supercapacitor. For example, with the ALD810020, I OUT = 1000µA corresponds to VIN = 2.52V. 3) Determine that the operating voltage margin, due to various tolerances and/or temperature effects, is adequate for the intended operating environment of the supercapacitor.

ALD810020/ALD910020 Advanced Linear Devices, Inc. 3 of 6 ALD810020 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V t 1.98 2.00 2.02 V V GS = VDS; IDS(ON) = 1µA Offset Voltage V OS 52 0 m V V t1 - Vt2 or Vt3 - Vt4 Offset Voltage Tempco TC VOS 5 µV/C V t1 - Vt2 or Vt3 - Vt4 Gate Threshold Voltage Tempco TC Vt -2.2 mV/C V GS = VDS; IDS(ON) = 1µA Output Current I OUT 0.0001 µAV IN = 1.60V Drain Source On Resistance R DS(ON) 16000 MΩ Output Current I OUT 0.001 µAV IN = 1.70V Drain Source On Resistance R DS(ON) 1700 MΩ Output Current I OUT 0.01 µAV IN = 1.80V Drain Source On Resistance R DS(ON) 180 MΩ Output Current I OUT 0.1 µAV IN = 1.90V Drain Source On Resistance R DS(ON) 19 MΩ Output Current I OUT 1 µAV IN = 2.00V Drain Source On Resistance R DS(ON) 2.0 MΩ Output Current I OUT 10 µAV IN = 2.10V Drain Source On Resistance R DS(ON) 0.21 MΩ Output Current I OUT 100 µAV IN = 2.24V Drain Source On Resistance R DS(ON) 0.022 MΩ Output Current I OUT 300 µAV IN = 2.34V Drain Source On Resistance R DS(ON) 0.008 MΩ Output Current I OUT 1000 µAV IN = 2.52V Drain Source On Resistance R DS(ON) 0.003 MΩ Output Current I OUT 3000 µAV IN = 2.82V Drain Source On Resistance R DS(ON) 0.001 MΩ Output Current I OUT 10000 µAV IN = 3.42V Drain Source On Resistance R DS(ON) 0.0003 MΩ Drain Source Breakdown Voltage BV DSX 10.6 V Drain Source Leakage Current1 IDS(OFF) 10 400 pA V IN = VGS = VDS = Vt - 1.0 VIN = VGS = VDS = Vt - 1.0, 4n A T A = +125°C Gate Leakage Current1 IGSS 5 200 pA V GS = 5.0V, VDS = 0V VGS = 5.0V, VDS = 0V, 1n A T A = +125°C Input Capacitance C ISS 15 pF V GS = 0V, VDS = 5.0V Turn-on Delay Time t on 10 ns Turn-off Delay Time t off 10 ns Crosstalk 60 dB f = 100KHz OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified ABSOLUTE MAXIMUM RATINGS V+ to V- voltage 15.0V Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Operating Current 80mA Power dissipation 500mW Operating temperature range SCL 0 °C to +70°C Operating temperature range SCLI -40 °C to +85°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

ALD810020/ALD910020 Advanced Linear Devices, Inc. 4 of 6 ALD910020 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V t 1.98 2.00 2.02 V V GS = VDS; IDS(ON) = 1µA Offset Voltage V OS 52 0 m V V t1 - Vt2 Offset Voltage Tempco TC VOS 5 µV/C V t1 - Vt2 Gate Threshold Voltage Tempco TC Vt -2.2 mV/C V GS = VDS; IDS(ON) = 1µA Output Current I OUT 0.0001 µAV IN = 1.60V Drain Source On Resistance R DS(ON) 16000 MΩ Output Current I OUT 0.001 µAV IN = 1.70V Drain Source On Resistance R DS(ON) 1700 MΩ Output Current I OUT 0.01 µAV IN = 1.80V Drain Source On Resistance R DS(ON) 180 MΩ Output Current I OUT 0.1 µAV IN = 1.90V Drain Source On Resistance R DS(ON) 19 MΩ Output Current I OUT 1 µAV IN = 2.00V Drain Source On Resistance R DS(ON) 2.0 MΩ Output Current I OUT 10 µAV IN = 2.10V Drain Source On Resistance R DS(ON) 0.21 MΩ Output Current I OUT 100 µAV IN = 2.22V Drain Source On Resistance R DS(ON) 0.022 MΩ Output Current I OUT 300 µAV IN = 2.30V Drain Source On Resistance R DS(ON) 0.008 MΩ Output Current I OUT 1000 µAV IN = 2.44V Drain Source On Resistance R DS(ON) 0.002 MΩ Output Current I OUT 3000 µAV IN = 2.50V Drain Source On Resistance R DS(ON) 0.001 MΩ Output Current I OUT 10000 µAV IN = 3.00V Drain Source On Resistance R DS(ON) 0.0003 MΩ Drain Source Breakdown Voltage BV DSX 10.6 V Drain Source Leakage Current1 IDS(OFF) 10 400 pA V IN = VGS = VDS = Vt - 1.0 VIN = VGS = VDS = Vt - 1.0, 4n A T A = +125°C Gate Leakage Current1 IGSS 5 200 pA V GS = 5.0V, VDS = 0V VGS = 5.0V, VDS = 0V, 1n A T A = +125°C Input Capacitance C ISS 30 pF V GS = 0V, VDS = 5.0V Turn-on Delay Time t on 10 ns Turn-off Delay Time t off 10 ns Crosstalk 60 dB f = 100KHz OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified ABSOLUTE MAXIMUM RATINGS V+ to V- voltage 15.0V Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Operating Current 80mA Power dissipation 500mW Operating temperature range SAL 0 °C to +70°C Operating temperature range SALI -40 °C to +85°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

ALD810020/ALD910020 Advanced Linear Devices, Inc. 5 of 6

16 Pin Plastic SOIC Package

E D e A b S (45°) L CH S (45°) ø SOIC-16 PACKAGE DRAWING Millimeters Inches Min Max Min MaxDim A b C D-16 E e H L S 1.75 0.25 0.45 0.25 10.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.385 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.394 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 9.80 3.50 5.70 0.60 0.25 ø

ALD810020/ALD910020 Advanced Linear Devices, Inc. 6 of 6

8 Pin Plastic SOIC Package

L CH S (45°) ø e A b D S (45°) E Millimeters Inches Min Max Min MaxDim A b C D-8 E e H L S 1.75 0.25 0.45 0.25 5.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.185 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.196 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 4.69 3.50 5.70 0.60 0.25 ø