ALD310704SCL

ALD310704A ALD | Alldatasheet

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Technical content

ALD310704A/ALD310704 high precision monolithic quad P-Channel MOSFET arrays are matched at the factory using ALD's proven EPAD® CMOS technology. This device is available in a quad version and is a member of the EPAD ® Matched Pair MOSFET Family. The ALD310704A/ALD310704 is a P-channel version of the popular ALD110804A/ALD110804 Precision Threshold device. Together, these two MOSFET series enable complementary precision N-Channel and P- Channel MOSFET array based circuits. Intended for low voltage and low power small signal applications, the ALD310704A/ALD310704 features precision -0.40V Gate Threshold Voltage, which enables circuit designs with very low operating voltages such as < +1.0V power supplies where the circuits operate below the threshold voltage of the ALD310704A/ALD310704. This feature also enhances input/output signal operating ranges, especially in very low operating voltage environments. With these low threshold precision devices, a circuit with multiple cascading stages can be constructed to operate at extremely low supply or bias voltage levels. ALD310704A/ ALD310704 also features high input impedance (2.5 x 10 10Ω) and high DC current gain (>108). ALD310704A/ALD310704 MOSFETs are designed for exceptional matching of device electrical characteristics. The Gate Threshold Voltage VGS(th) is set precisely at -0.40V +/-0.02V, featuring a typical offset voltage of only +/-0.001V (1mV). As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile design components for a broad range of precision analog applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. These devices also excel in limited operating voltage applications such as very low level precision voltage-clamps. In addition to matched pair electrical characteristics, each individual MOSFET exhibits individual well controlled manufacturing characteristics, enabling the user to depend on tight design limits from different production batches. (Continued on next page)

APPLICATIONS

• 0.5% precision current mirrors and current sources
• Low Tempco (<= 50ppm/ °C) current mirrors/sources
• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Backup battery circuits & power failure detectors
• Precision low level voltage-clamps
• Low level zero-crossing detector
• Source followers and buffers
• Precision capacitive probes and sensor interfaces
• Precision charge detectors and charge integrators
• Discrete differential amplifier input stage
• Peak-detectors and level-shifters
• High-side switches and Sample-and-Hold switches
• Precision current multipliers
• Discrete analog switches / multiplexers
• Discrete voltage comparators FEATURES & BENEFITS
• Precision matched Gate Threshold Voltages
• Precision offset voltages (V OS): ALD310704A: 1mV typical ALD310704: 2mV typical
• Sub-threshold voltage operation
• Low min. operating voltage of less than 0.4V
• Ultra low min. operating current of less than 1nA
• Nano-power operation
• Wide dynamic operating current ranges
• Exponential operating current ranges
• Matched transconductance and output conductance
• Matched and tracked temperature characteristics
• Tight lot-to-lot parametric control
• Positive, zero, and negative V GS(th) tempco bias currents
• Low input capacitance
• Low input/output leakage currents ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) *Contact factory for industrial temp. range or user-specified threshold voltage values. Operating Temperature Range * 0°C to +70°C 16-Pin SOIC Package 16-Pin Plastic Dip Package ALD310704ASCL ALD310704APCL ALD310704SCL ALD310704PCL PIN CONFIGURATION ALD310704 *IC pins are internally connected, connect to V- SCL, PCL PACKAGES BLOCK DIAGRAM eEPAD TM NABLED E ADVANCED LINEAR DEVICES, INC. ALD310704A/ALD310704 DP2 GP2 SP2 GP3 SP3 GP1 SP1 DP4 GP4 8 9 DP1 V+V- DP3 SP4 16IC1* IC2* M1 M2 M4 M3 DP1 (2) DP2 (15) GP1 (3) GP2 (14) DP3 (11) DP4 (6) SP3 (9) S P4 (8) V- (5) V+ (12) GP4 (7) IC1 (1) IC2 (16) GP3 (10) VGS(th)= -0.40V PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD NANOPOWER™ MATCHED PAIR

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 2 of 9 These devices are built to offer minimum offset voltage and differential thermal response, and they can also be used for switching and amplifying applications in -0.40V to -8.0V ( +/-0.20V to +/-4.0V) powered systems where low input bias current, low input capacitance, and fast switching speed are desired. These devices, exhibiting well controlled turn-off and sub-threshold characteristics, operate the same as standard enhancement mode P-Channel MOSFETs. However, the precision of the Gate Threshold Voltage enable two key additional characteristics, or operating features. First, the operating current level varies exponentially with gate bias voltage at GENERAL DESCRIPTION (cont.) or below the Gate Threshold Voltage (subthreshold region). Second, the circuit can be biased and operated in the subthreshold region with nA of bias current and nW of power dissipation. For most general applications, connect the V+ pin to the most positive voltage and the V- and IC (internally-connected) pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times. Standard ESD protection facilities and procedures for static sensitive devices are required when handling these devices. ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS -8.0V Gate-Source voltage, VGS -8.0V Operating Current 80mA Power dissipation 500mW Operating temperature range SCL, PCL 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. Notes: 1 Consists of junction leakage currents

2 Sample tested parameters

OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V V- = GND TA = 25°C unless otherwise specified ALD310704A ALD310704 Voltage Offset Voltage V OS 1 5 2 20 mV V GS(th)M1 - VGS(th)M2 or VGS(th)M3 - VGS(th)M4 Gate Threshold TC VGS(th) -2 -2 mV/ °C Temperature Drain Source On I DS(ON) -1.83 -1.83 mA V GS = VDS = -5.0V Current Transconductance G FS 570 570 µA/V V GS = VDS = -5.0V Current2 Transconductance ∆GFS 11 % V GS = VDS = -5.0V Mismatch Output Conductance2 GOS 48 48 µA/V V GS(th) = -4.0V, VDS = -5.0V Drain Source On R DS(ON) 1.20 1.20 K Ω VGS = -5.0V, Resistance VDS = -0.1V Drain Source On ∆RDS(ON) 11 % Resistance Mismatch Drain Source BV DSX -8.0 -8.0 V Breakdown Drain Source I DS (OFF) 400 400 pA Leakage Current1 Gate Leakage Current I GSS 200 200 pA Input Capacitance2 CISS 2.5 2.5 pF Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 3 of 9 TYPICAL PERFORMANCE CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) 500 400 200 -200 -400 -500 0.4 0.5 -0.5 -100 -300 300 100 VGS - VGS(th) = -1V V+ = 0V V- = -5V TA = +25°C -2V -4V -5V -3V DRAIN SOURCE ON CURRENT vs. GATE AND DRAIN SOURCE VOLTAGE DRAIN SOURCE ON CURRENT IDS(ON) (µA) GATE AND DRAIN SOURCE VOLTAGE VGS = VDS (V) -2500 -1500 -500 -2000 -1000 0 -1 -3 -4 -5-2 V- = -5V TA = +25°C ALD310702 ALD310704 ALD310700 ALD310708 OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) 0 -1 -3 -4 -5-2 -2500 -1500 -500 -2000 -1000 VGS = VGS(th) - 4V VGS = VGS(th) - 2V VGS = VGS(th) - 1V VGS = VGS(th) - 3V V- = -5.0V TA = +25°C VGS = VGS(th) - 5V FORWARD TRANSFER CHARACTERISTICS DRAIN SOURCE ON CURRENT IDS(ON) (µA) GATE SOURCE VOLTAGE - VGS (V) -70 -60 -50 -40 -30 -20 -10 ALD310700 ALD310702 ALD310704 ALD310708 VDS = -0.1V V+ = 0V V- = -5V TA = +25°C OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) -2500 -2000 -1500 -1000 -500 DRAIN SOURCE ON CURRENT IDS(ON) (µA) -5-4-3-2-10 VGS = VGS(th) - 4V +125°C+70°C -45°C +25°C -25°C 0°C +85°C FORWARD TRANSFER CHARACTERISTICS (SUBTHRESHOLD) GATE SOURCE VOLTAGE - VGS (V) DRAIN SOURCE ON CURRENT IDS(ON) (nA) 100000 10000 1000 100 0.1 0.01 ALD310700 VDS = -0.1V V+ = 0V V- = -5V TA = +25°C ALD310702 ALD310704 ALD310708

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 4 of 9 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) GATE THRESHOLD VOLTAGE vs. DRAIN SOURCE VOLTAGE GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN SOURCE VOLTAGE - VDS (V) 0 -1 -3 -4 -5-2 1.0 -1.0 0.5 -0.5 V- = -5V TA = +25°C ALD310702 ALD310704 ALD310700 ALD310708 GATE THRESHOLD VOLTAGE vs. SUBSTRATE BIAS GATE THRESHOLD VOLTAGE VGS(th) (V) SUBSTRATE BIAS - V+ (V) 0 1 3 482 -1.5 -0.5 -2.0 -1.0 6 75 ALD310704 VDS = -0.1V V- = -5V TA = +25°C ALD310702 ALD310708 ALD310700 FORWARD TRANSFER CHARACTERISTICS EXPANDED (SUBTHRESHOLD) GATE SOURCE VOLTAGE - VGS (V) DRAIN SOURCE ON CURRENT IDS(ON) (µA) 0.1 0.01 0.001 0.0001 0.00001 0.000001 100 ALD310700 ALD310704 ALD310702 ALD310708 VDS = -5.0V V+ = 0V V- = -5V TA = +25°C GATE THRESHOLD VOLTAGE vs. V- VOLTAGE GATE THRESHOLD VOLTAGE VGS(th) (V) V- VOLTAGE (V) 0.2 -0.2 -0.4 -0.6 -0.8 -1.0 VDS = -0.1V V+ = 0V TA = +25°C ALD310708: V GS(th) = -0.800V ALD310704: V GS(th) = -0.400V ALD310700: V GS(th) = 0.000V ALD310702: V GS(th) = -0.200V GATE THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE GATE THRESHOLD VOLTAGE VGS(th) (V) AMBIENT TEMPERATURE - TA (°C) -1.0 1.0 -0.5 0.5 -50 0 -25 +25 +50 +75 +100 +125 ALD310704 ALD310700 ALD310708 VDS = -0.1V V+ = 0V V- = -5V ALD310702 DRAIN SOURCE ON CURRENT IDS(ON) (nA) GATE SOURCE OVERDRIVE VOLTAGE VGS - VGS(th) (V) 100000 10000 1000 100 0.1 0.01 FORWARD TRANSFER CHARACTERISTICS FURTHER EXPANDED (SUBTHRESHOLD) VDS = -5V TA = +25°C

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 5 of 9 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) TRANSCONDUCTANCE vs. GATE SOURCE OVERVOLTAGE GATE SOURCE OVERVOLTAGE - VGS-VGS(th) (V) 700 600 500 400 300 200 100 800 TRANSCONDUCTANCE GFS (µA/V) VDS = -0.1V V+ = 0V V- = -5V TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE -50 0 -25 +25 +50 +75 +100 TRANSCONDUCTANCE GFS (µA/V) AMBIENT TEMPERATURE - TA (°C) 1000 500 750 250 +125 VGS = VGS(th) - 4.0V VDS = -5.0V VGS = VGS(th) - 1.0V VDS = -5.0V VGS = VGS(th) - 0.5V VDS = -5.0V TRANSCONDUCTANCE vs. GATE THRESHOLD VOLTAGE GATE THRESHOLD VOLTAGE - VGS(th) (V) TRANSCONDUCTANCE GFS (µA/V) 750 500 250 1000 VGS = VGS(th) - 4.0V VDS = -5.0V VGS = VGS(th) - 1.0V VDS = -5.0V VGS = VGS(th) - 0.5V VDS = -5.0V V+ = 0V V- = -5V TA = +25°C OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE OUTPUT CONDUCTANCE GDS (µA/V) -50 -25 0 +25 +50 +125 +100+75 AMBIENT TEMPERATURE - TA (°C) VGS = VGS(th) - 4.0V VDS = -5.0V VGS = VGS(th) - 1.0V VDS = -5.0V VGS = VGS(th) - 0.5V VDS = -5.0V DRAIN SOURCE ON CURRENT IDS(ON) (µA) -60 -50 -40 -30 -20 -10 ZERO TEMPERATURE COEFFICIENT (ZTC) -1.0-0.6 -1.40.2 GATE SOURCE OVERDRIVE VOLTAGE VGS - VGS(th) (V) VDS = -0.1V V+ = 0V V- = -5V -45°C 0°C +25°C +125°C +85°C OUTPUT CONDUCTANCE vs. DRAIN SOURCE ON VOLTAGE OUTPUT CONDUCTANCE GDS (µA/V) 0 -1 -3 -4 -5-2 1000 600 200 800 400 DRAIN SOURCE ON VOLTAGE - VDS(ON) (V) VGS(th) - 4.0V VGS(th) - 1.0V VGS(th) - 0.5V

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 6 of 9 TYPICAL APPLICATIONS LOW VOLTAGE CURRENT SOURCE W/ GATE CONTROLLOW VOLTAGE CURRENT SOURCE MIRROR LOW VOLTAGE DIFFERENTIAL AMPLIFIER 0.5% PRECISION LOW VOLTAGE CURRENT SOURCE MULTIPLICATION ISET RSET I SOURCE M1, M2: N-Channel MOSFET M3, M4: P-Channel MOSFET M1 M2 V+ = +1.0V to +5.0V 1/2 ALD1108xx, 1/2 ALD2108xx, ALD1109xx or ALD2129xx 1/2 ALD310704 ISOURCE = ISET V+ - Vt RSET ISOURCERSET ISET ON OFF Digital Logic Control of Current Source 1/4 ALD1108xx, 1/4 ALD2108xx, 1/2 ALD1109xx or 1/2 ALD2129xx M 1 : N-Channel MOSFET M3, M4: P-Channel MOSFET 1/2 ALD310704 V+ = +1.0V to +5.0V PMOS PAIR VIN-NMOS PAIR M2M1VIN+ Current Source VOUT M1, M2: N-Channel MOSFET M3, M4: P-Channel MOSFET V+ = +5.0V 1/2 ALD1108xx, 1/2 ALD2108xx, ALD1109xx or ALD2129xx 1/2 ALD310704 MNSET: MN1, MN2..MNX: N-Channel MOSFET ISOURCE = ISET . X . Y MPSET V+ = +1.0V to +5.0V A MPSET: MP1, MP2..MPY: P-Channel MOSFET MP1 MP2 MP3 MPY ALD1108xx or ALD2108xx ISET ISOURCE = ISET . XRSET MNSET MN1 V+ = +1.0V to +5.0V A ALD310704 MN2 MN3 MNX

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 7 of 9 TYPICAL APPLICATIONS (cont.) 0.5% LOW VOLTAGE PRECISION CURRENT MIRRORS 0.5% PRECISION LOW VOLTAGE CASCODE CURRENT SOURCES 0.5% PRECISION LOW TEMPCO CASCODE CURRENT SOURCES ISOURCE V+ = +1.0V to +5.0V RSETISET M1M2 V+ = +1.0V to +5.0V I SOURCE RSETISET M1, M2: N-Channel MOSFET M3, M4: P-Channel MOSFET ISOURCE = ISET = V+ - Vt RSET 1/2 ALD310704 1/2 ALD1108xx, 1/2 ALD2108xx, ALD1109xx or ALD2129xx 1.5KΩ < R SET < 5.0MΩ ISOURCE = ISET = V+ - Vt RSET MPA1...MPA4: ALD310704 P-Channel MOSFET (1st individual pkg) MPB1...MPB4: ALD310704 P-Channel MOSFET (2nd individual pkg) MPA1 MPA4 V+ = +1.5V to +5.0V MPA3MPA2 MPB1 MPB4MPB3MPB2 RSETISET ALD310704 ALD310704 ISOURCE V+ - 2Vt RSET( )ISOURCE = 3 . ISET = 3 ISET V+ = +1.0V to +1.5V ISOURCE RSET M1, M2, M3, M4: N-Channel MOSFET ISET V+ = +3.0V to +5.0V ISOURCE ISOURCE = ISET = V+ - 2Vt RSET RSET M1, M2, M3, M4: P-Channel MOSFET Temperature stable <= 50ppm/°C when ISET = 57µA. ALD1108xx or ALD2108xx ALD310704

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 8 of 9

16 Pin Plastic SOIC Package

E D e A b S (45°) L CH S (45°) ø SOIC-16 PACKAGE DRAWING Millimeters Inches Min Max Min MaxDim A b C D-16 E e H L S 1.75 0.25 0.45 0.25 10.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.385 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.394 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 9.80 3.50 5.70 0.60 0.25 ø

ALD310704A/ALD310704 Advanced Linear Devices, Inc. 9 of 9

16 Pin Plastic DIP Package

A b c D-16 E e L S-16 ø 3.81 0.38 1.27 0.89 0.38 0.20 18.93 5.59 7.62 2.29 7.37 2.79 0.38 5.08 1.27 2.03 1.65 0.51 0.30 21.33 7.11 8.26 2.79 7.87 3.81 1.52 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.745 0.220 0.300 0.090 0.290 0.110 0.015 0.200 0.050 0.080 0.065 0.020 0.012 0.840 0.280 0.325 0.110 0.310 0.150 0.060 15° PDIP-16 PACKAGE DRAWING D S b e A L E E1 c e1 ø