ALD1108ESC

ALD1108E ALD | Alldatasheet

Document overview

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Technical content

FEATURES

• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design element
• Very high resolution -- average programmable voltage resolution of 0.1mV
• Wide dynamic range -- current levels from 0.1µA to 3000µA
• Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps
• Proven, non-volatile CMOS technology
• Typical 10 years drift of less than 2mV
• Usable in voltage mode or current mode
• High input impedance -- 1012Ω
• Very high DC current gain -- greater than 109
• Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68µA
• Tight matching and tracking of on-resistance between different devices with programming
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• User programmable software-controlled automation
• User programmability of any standard/custom configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic CDIP packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming applications QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) ADVANCED LINEAR D EVICES, INC. ALD1108E/ALD1110E BENEFITS
• Simple, elegant single-chip solution to trimming voltage/current values
• Direct in-circuit active element operation and programming
• Remotely and electrically trim parameters on circuits that are physically inaccessible
• Usable in environmentally sealed circuits
• No system overhead or active circuitry required
• No mechanical moving parts -- high G-shock tolerance
• Improved reliability, dependability, dust and moisture resistance
• Cost and labor savings
• Small footprint for high board density

applications

• Fully automated test and trimming environment Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 8-Pin 8-Pin 8-Pin CERDIP Plastic Dip SOIC Package Package Package ALD1110E DA ALD1110E PA ALD1110E SA Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 16-Pin 16-Pin 16-Pin CERDIP Plastic Dip SOIC Package Package Package ALD1108E DC ALD1108E PC ALD1108E SC

ORDERING INFORMATION

• Contact factory for industrial temperature range PN21 3 14 4 13 V+ 5 12 S34 PN3 G N1 D N1 PN1 S12 G N4 PN4 D N4 G N3 D N3 D N2 G N2 DC, PC, SC PACKAGE ALD1108E EPAD 1 EPAD 2 EPAD 4 EPAD 3 PN21 3 6 4 5 V+ G N1 D N1 PN1 S12, V- D N2 G N2 DA, PA, SA PACKAGE ALD1110E EPAD 1 EPAD 2 © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ALD1108E/ALD1110E Advanced Linear Devices 2 GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with elec- trically programmable threshold voltage. For a given input voltage, changing the threshold turn-on voltage of a MOSFET device precisely changes its drain on-current, resulting in an on-resistance characteris- tic that can be precisely set and controlled. Used as an in-circuit element for trimming or setting a combination of voltage and/or current charac- teristics, it can be programmed via a Personal Computer remotely and automatically via software control. Once programmed and set, the set voltage and current levels are stored indefinitely inside the device as a precisely controlled nonvolatile stored charge, which is not affected during normal operation of the device, even after power has been turned off. The ALD1108E/ALD1110E are devices built with ALD's EPAD technol- ogy, an electrically programmable device technology refined for analog applications. The ALD1108E/ALD1110E functions like a regular MOSFET transistor except with precise user preset threshold voltage. Using the ALD1108E/ALD1110E is simple and straight forward. The device is extremely versatile as a circuit element and design component. It presents the user with a wealth of possible applications, limited only by the imagination of the user and the many ways an analog MOSFET device can be used as a circuit design element. The ALD1108E/ ALD1110E do not need other active circuitry for functionality. The basic device is a monotonically adjustable device which means the device can normally be programmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Once adjusted, the voltage and current conditions are perma- nent and not reversible. However, a given EPAD device can be adjusted many times to continually increase the threshold voltage. A pair of EPAD devices can also be connected such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1108E/ALD1110E can be pre-programmed with the ALD EPAD programmer to obtain the desired voltage and current levels. Or, they can be programmed as an active in-system element in a user system, via user designed interface circuitry. For more information, see

• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources and current mirrors
• Electrically trimmed/calibrated current sources
• Permanent precision preset voltage level shifter
• Low temperature coefficient voltage and/or current bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
• Programmable gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks BLOCK DIAGRAM PN1 (1) D N1 (3) G N1 (2) D N2 (6) PN2 (8) G N2 (7) V- (4) V+(5) S12 (4) ALD1110E EPAD 1 EPAD 2 BLOCK DIAGRAM EPAD 1 EPAD 2 EPAD 3 EPAD 4 PN4 (8)PN (1) D N1 (3) G N1 (2) D N2 (14) PN2 (16) G N2 (15) PN3 (9) D N3 (11) G N3 (10) D N4 (6) G N4 (7) V- (5) V+(13) S12 (4) S 34 (12) ALD1108E

ALD1108E/ALD1110E Advanced Linear Devices 3 Supply Voltage V + 1.2 10.0 1.2 10.0 V Programmable Vt Range V t 1.000 3.000 1.000 3.000 V Drain - Gate Connected TCV DS -1.6 -1.6 mV/ °CI D = 5µA Voltage Tempco -0.3 -0.3 mV/ °CI D = 50µA 0.0 0.0 mV/ °CI D = 68µA +2.7 +2.7 mV/ °CI D = 500µA Initial Offset Voltage V OS i 15 1 5 m V Tempco of VOS TCV OS 55 µ V/°CV DS1 = VDS2 Differential Threshold Voltage DVt 2.000 2.000 V Tempco of Differential Threshold Voltage TCDV t 0.033 0.033 mV/ °C Long Term Drift ΔV t /Δ t -0.02 -0.05 -0.02 -0.05 mV 1000 Hours Long Term Drift Match ΔV t /Δ t- 5 - 5 µ V 1000 Hours Drain Source On Current I DS(ON) 3.0 3.0 mA V G =VD = 5V VS = 0V Vt = 1.0 Drain Source On Current I DS(ON) 0.8 0.8 mA V G =VD = 5V VS = 0V Vt = 3.0 Initial Zero Tempco Voltage VZTCi 1.52 1.52 V V t = 1.000V Zero Tempco Current I ZT C 68 68 µ A Initial On-Resistance R ON i 500 500 Ω VGS ¡= 5V VDS = 0.1V On-Resistance Match Δ RON 0.5 0.5 % ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to V- -0.3V to +13.2V Supply voltage, VS referenced to V- ±6.6V Differential input voltage range 0.3V to V+ +0.3V Power dissipation 600 mW Operating temperature range PA, SA, PC, SC package 0 °C to +70°C DA, DC package -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C V+ = +5.0V unless otherwise specified ALD1108E ALD1110E Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions

ALD1108E/ALD1110E Advanced Linear Devices 4 PROGRAMMING CHARACTERISTICS TA = 25°C V+ = +5.0V unless otherwise specified ALD1108E ALD1110E Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Programmable Vt Range V t 1.000 3.000 1.000 3.000 V Resolution of Vt Programming RV t 0.1 1 0.1 1 mV Change in Vt Per ΔV t / N 0.5 0.5 mV/ pulse V t = 1.0V Programming Pulse 0.05 0.05 V t = 2.5V Programming Current Ip 2 2 mA Pulse Frequency ƒ pulse 50 50 KH Z Transconductance gm 1.4 1.4 mA/V V D = 10V,VG =Vt + 4.0 Transconductance Match Δ gm 25 25 µA/V V D = 10V,VG =Vt + 4.0 Low Level Output Conductance g OL 66 µA/V V G = Vt +0.5V High Level Output Conductance g OH 68 68 µA/V V G = Vt +4.0V Drain Off Leakage Current I D(OFF) 5 400 5 400 pA 44 n A T A = 125°C Gate Leakage Current I GSS 10 100 10 100 pA 11 n A T A = 125°C Input Capacitance C ISS 25 25 pF Cross Talk 60 60 dB f = 100KHz Relaxation Time Constant t RLX 2 2 Hours Relaxation Voltage VRLX -0.3 -0.3 % 1.0V ≤ Vt ≤ 3.0V OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25°C V+ = +5.0V unless otherwise specified ALD1108E ALD1110E Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions

ALD1108E/ALD1110E Advanced Linear Devices 5 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN SOURCE ON VOLTAGE (V) 02 46 1 0 1 2 8 DRAIN SOURCE ON CURRENT (mA) TA = +25°C VGS = +12V VGS = + 2V VGS = + 4V VGS = + 6V VGS = + 8V VGS = +10V OUTPUT CHARACTERISTICS -200 -160 -120 -80 -40 +200 +1.0 0 40 80 120 160 DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE ON CURRENT (mA) -1.0 VGS = +12V VGS = +6V VGS = +8V VGS = +10V TA = +25°C TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE THRESHOLD VOLTAGE (V) 2.0 1.5 1.0 5.0 TRANSCONDUCTANCE ( mA/V) TA = +25°C VGS = Vt + 4.0V VDS = 10V HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE THRESHOLD VOLTAGE (V) HIGH LEVEL OUTPUT CONDUCTANCE ( µ A/V) TA = +25°C VGS = Vt + 4.0V VDS = 5.0V DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE THRESHOLD VOLTAGE (V) TA = +25°C VDS = +5.0V DRAIN SOURCE ON CURRENT (mA) 3.0 2.0 1.0 VGS = +5V VGS = +1V VGS = +2V VGS = +3V VGS = +4V DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 75 100 125 DRAIN SOURCE ON CURRENT (mA) VG = 5V Vt = 1.0V Vt = 1.5V Vt = 3.0V Vt = 2.0V Vt = 2.5V

ALD1108E/ALD1110E Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE LOW LEVEL OUTPUT CONDUCTANCE( µA/V) AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 12510075 VGS = Vt + 0.5V VDS = 5.0V HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 100 HIGH LEVEL OUTPUT CONDUCTANCE (mA/V) -50 -25 0 25 50 125 10075 AMBIENT TEMPERATURE ( °C) VGS = Vt + 4.0V VDS = 5.0V LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE THRESHOLD VOTAGE (V) LOW LEVEL CURRENT OUTPUT CONDUCTANCE ( µA/V) TA = +25°C VGS = Vt + 0.5V VDS = 5.0V TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE TRANSCONDUCTANCE (mA/V) AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 125 10075 2.5 2.0 1.5 1.0 0.5 THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 4.0 3.0 2.0 THRESHOLD VOTAGE (V) AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 12510075 1.0 VDS = VGS ID = 1.0µA Vt = 1.0V Vt = 1.5V Vt = 2.0V Vt = 2.5V Vt = 3.0V DRAIN OFF LEAKAGE CURRENT I DS vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 125 10075 500 400 DRAIN OFF LEAKAGE CURRENT (pA) 300 200 600 100 IDS

ALD1108E/ALD1110E Advanced Linear Devices 7 TYPICAL PERFORMANCE CHARACTERISTICS CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE +10 -10 CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV) -50 -25 0 25 50 125 10075 AMBIENT TEMPERATURE ( °C) REPRESENTATIVE UNITS GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT DRAIN SOURCE ON CURRENT ( µA) GATE SOURCE VOLTAGE (V) 0.1 1 10010 1000 10000 VDS = 0.5V TA = +125°C VDS = 0.5V TA = +25°C VDS = 5V TA = +25°C VDS = 5V TA = +125°C VDS IDS(ON) D VGS S VDS = RON • IDS(ON) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) DRAIN SOURCE ON CURRENT (mA) 543210 70°C 125°C -25°C 0°C -55°C DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) 100 DRAIN SOURCE ON CURRENT ( µA) Zero Temperature Coefficient (ZTC) { {{ Vt = 1.2V Vt = 1.4V Vt = 1.0V ZTC 125°C 125°C ZTC 125°C DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE 543210 TA = -55°C TA = +50°C DRAIN SOURCE ON CURRENT (mA) OUTPUT VOLTAGE (V) TA = 0°C Vt = 1.000V VDS = VGS TA = +125°C DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE ON - RESISTANCE (KΩ ) 0.1 1.0 100 10 1000 10000 DRAIN SOURCE ON CURRENT, BIAS CURRENT (µ A) 0.1 1.0 100 1000 10000 VDS = RON • IDS(ON) VGS = +0.9V to +5.0V VDS = 5.0V VDS = 0.5V VDSD VGS S IDS(ON)

ALD1108E/ALD1110E Advanced Linear Devices 8 TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE ( °C) -50 -25 0 25 50 125 10075 OFFSET VOLTAGE (mV) REPRESENTATIVE UNITS GATE SOURCE VOLTAGE vs. ON - RESISTANCE 5.0 4.0 3.0 2.0 1.0 0.1 1 10010 1000 10000 +25°C GATE SOURCE VOLTAGE (V) ON - RESISTANCE (KΩ ) +125°C VDS IDS(ON) D VGS S 0.0V ≤ VDS ≤ 5.0V DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ °C ) DRAIN SOURCE ON CURRENT ( µA) 1 10 100 1000 -2.5 2.5 GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE GATE LEAKAGE CURRENT (pA) -50 -25 0 25 50 125 10075 500 400 300 200 600 100 AMBIENT TEMPERATURE ( °C) IGSS

ALD1108E/ALD1110E Advanced Linear Devices 9 DEFINITION OF TERMS Bias Voltage (V BIAS ) Bias Voltage of an EPAD is the voltage across Gate and Source terminals with Gate and Drain connected at a specified Drain to Source Current, IDS. When IDS = 1µA, Bias Voltage is identical to Threshold Voltage. Input Bias Voltage of an EPAD is the voltage across Gate and Source terminals, VGS . Output Bias Voltage of an EPAD is the voltage across Drain and Source terminals VDS at a specified Drain to Source Current, IDS . Change in Threshold Voltage Per Programming Pulse (ΔVt/ N) This is the voltage change in Threshold Voltage while the EPAD is being programmed with an electrical voltage pulse. This voltage change can be very small as it varies as an exponential function of Vt. Typical initial values range from 0.1 mV/step to 1.0mV/step when Vt = 1 Volt and decreases to 10µV/step or lower at higher Vt values. Delta Threshold Voltage ( ΔVt) Delta Threshold Voltage is a change in the threshold voltage of the same EPAD device after programming. Differential Threshold Voltage (DVt) Differential Threshold Voltage is the difference of Vt between the two EPAD devices, each electrically programmed to a different Vt value. This is also a fixed relative voltage that tracks with temperature, with tempco value of TC DVt for 1 volt relative Vt between two EPADs. EPAD™ Electrically Programmable Analog Device is an Integrated Circuit that utilizes CMOS FET with electrically programmable Threshold Voltage. Once programmed, the set Threshold Voltage is retained indefinitely, even when power is off. Initial Threshold Voltage (Vti) The initial Vt of a device before being electrically programmed to a new Vt value. Initial Zero Tempco Voltage (VZTCi) Initial Drain Voltage at which the Temperature Coefficient of the Drain-Gate connected Voltage, relative to the Source Voltage, is at zero, when the initial Vt is at 1.000 volt. Long Term Drift (ΔVt /Δt) Long Term Drift is the nominal change in threshold voltage of an EPAD for a time period of 1,000 hours. Long Term Drift Match (ΔVt /Δt) Long Term Drift Match is the nominal match in long term drift between two EPADs, for a time period of 1,000 hours. Monotonic Adjustment of Vt Vt Adjustment can be changed in one direction only. Offset Voltage (VOS ) Offset Voltage is the small difference in Vt between two EPAD devices when the two devices have the same initial electrically programmed Vt values. Programming Voltage (Vp) The voltage at which programming of the threshold voltage of the EPAD occurs. This voltage, the control of timing of this voltage and the impedance of the voltage source is critical to the way the EPAD is programmed and its subsequent device performance. The user is advised to use an ALD EPAD programmer which has been specifically designed and developed for this task. Relaxation Time Constant (tRLX ) Relaxation Time Constant is the time constant associated with the Relaxation Voltage drop after an EPAD has been programmed.

ALD1108E/ALD1110E Advanced Linear Devices 10 Relaxation Voltage (VRLX ) After programming, an EPAD threshold voltage will “ relax “ a small amount, which corresponds to a small loss of interface charge. This is a small, fixed voltage step and decreases at a Relaxation Time Constant. The Relaxation Voltage is the voltage change (voltage drop) after three Relaxation Time Constants. To compensate for this, an initial relaxation voltage, expressed as a percentage of the programmed Vt, can be added to the initial desired target voltage. Tempco of Differential Threshold Voltage (TCDVt) Temperature Coefficient of Differential Threshold Voltage is the change in difference between two EPAD threshold voltages per degree C change in temperature when the two devices initially have 1V relative electrically programmed Vt difference. Tempco of Threshold Voltage (TCV Temperature Coefficient of the Vt is the change in the Threshold Voltage per degree C change in temperature. Threshold Voltage (Vt) Threshold Voltage of an EPAD is the voltage across Gate and Source when 1µA is forced into the Drain terminal as the Drain and Gate are connected together. Tempco of VOS (TCVOS ) Temperature Coefficient of Offset Voltage is the change in difference between two EPAD threshold voltages per degree Centigrade change in temperature when the two devices have the same initial electrically programmed Vt values. Zero Tempco Current (I ZTC ) The Drain current of an EPAD device at which Temperature Coefficient of the Drain-Gate Connected Voltage, relative to the Source Voltage, is at zero.