ALD110802 ALD | Alldatasheet

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E ADVANCED LINEAR DEVICES, INC. ALD110802/ALD110902

ORDERING INFORMATION

*N/C pins are internally connected. Connect to V- to reduce noise PC, SC PACKAGES PA, SA PACKAGES PIN CONFIGURATION Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com GENERAL DESCRIPTION ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for ex- ceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. They are versatile circuit elements useful as design com- ponents for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmis- sion gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits. The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold charac- teristics and can be biased and operated in the sub-threshold region. Since these are MOSFET devices, they feature very large (almost infi- nite) current gain in a low frequency, or near DC, operating environment. The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which re- quire very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES

  • Enhancement-mode (normally off)
  • Precision Gate Threshold Voltage of +0.2V
  • Matched MOSFET to MOSFET characteristics
  • Tight lot to lot parametric control
  • Low input capacitance
  • V GS(th) match (VOS) to 10mV
  • High input impedance — 1012Ω typical
  • Positive, zero, and negative VGS(th) temperature coefficient
  • DC current gain >108
  • Low input and output leakage currents Operating Temperature Range* 0°C to +70°C0 °C to +70°C 16-Pin 16-Pin 8-Pin 8Pin Plastic Dip SOIC Plastic Dip SOIC Package Package Package Package ALD110802PC ALD110802SC ALD110902PA ALD110902SA * Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

APPLICATIONS

  • Ultra low power (nanowatt) analog and digital circuits
  • Ultra low operating voltage(<0.2V) circuits
  • Sub-threshold biased and operated circuits
  • Precision current mirrors and current sources
  • Nano-Amp current sources
  • High impedance resistor simulators
  • Capacitive probes and sensor interfaces
  • Differential amplifier input stages
  • Discrete Voltage comparators and level shifters
  • Voltage bias circuits
  • Sample and Hold circuits
  • Analog and digital inverters
  • Charge detectors and charge integrators
  • Source followers and High Impedance buffers
  • Current multipliers
  • Discrete Analog switches / multiplexers N/C*1 3 14 4 13 5 12 N/C* GN1 DN1 N/C* DN4 N/C* GN4 GN3 DN3 DN2 GN2 S34 S12 ALD110802 M 4 M 3 M 1 M 2 V- V- GN1 DN1 N/C* S12 DN2 GN2 ALD110902 3 6 4 5 M 1 M 2 N/C* V-V- QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY VGS(th)= +0.2V

ALD110802/ALD110902 Advanced Linear Devices 2 Notes: 1 Consists of junction leakage currents ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range PA, SA, PC, SC package 0 °C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. Gate Threshold Voltage V GS(th) 0.18 0.20 0.22 V I DS =1µA VDS = 0.1V Offset Voltage V OS 21 0 m V VGS(th)1-VGS(th)2 Offset VoltageTempco TC ∆VOS 5 µV/ °CV DS1= VDS2 GateThreshold Voltage Tempco TC ∆VGS(th) -1.7 mV/ °CI D = 1µA 0.0 I D = 20µA, VDS = 0.1V +1.6 I D = 40µA On Drain Current I DS (ON) 12.0 mA V GS = + 9.7V 3.0 V GS = + 4.2V VDS = + 5V Forward Transconductance G FS 1.4 mmho V GS = +4.2V VDS = + 9.2V Transconductance Mismatch ∆GFS 1.8 % Output Conductance G OS 68 µmho V GS = +4.2V VDS = +9.2V Drain Source On Resistance R DS (ON) 500 Ω VDS = 0.1V VGS = +4.2V Drain Source On Resistance ∆RDS (ON) 0.5 % Mismatch Drain Source Breakdown BV DSX 10 V I DS = 1.0µA Voltage VGS = -0.8V Drain Source Leakage Current1 IDS (OFF) 10 100 pA V GS = -0.8V 4n A V DS =10V, TA = 125°C Gate Leakage Current1 IGSS 33 0 p A V DS = 0V VGS = 10V 1n A T A =125°C Input Capacitance C ISS 2.5 pF Transfer Reverse Capacitance C RSS 0.1 pF Turn-on Delay Time t on 10 ns V + = 5V RL= 5KΩ Turn-off Delay Time t off 10 ns V + = 5V RL= 5KΩ Crosstalk 60 dB f = 100KHz ALD110802 / ALD110902 Parameter Symbol Min Typ Max Unit Test Conditions