ALD1107SB

ALD1107 ALD | Alldatasheet

Document overview

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Technical content

D P1 (1) D P2 (14) G P1 (2) G P2 (13) D P3 (10) D P4 (5) G P3 (9) SP3 (8) S P4 (7) V- (4) V+ (11) G P4 (6) ALD1107 BLOCK DIAGRAM GENERAL DESCRIPTION The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- ment mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD1107/ALD1117 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other preci- sion analog circuits.

APPLICATIONS

• Precision current sources
• Precision current mirrors
• Voltage Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Precision analog signal processing ADVANCED LINEAR D EVICES, INC. QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY ALD1107/ALD1117

FEATURES

• Low threshold voltage of -0.7
• Low input capacitance
• Low V OS 2mV typical
• High input impedance -- 1014Ω typical
• Low input and output leakage currents
• Negative current (IDS ) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 10
• Low input and output leakage currents Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 8-Pin CERDIP 8-Pin Plastic Dip 8-Pin SOIC Package Package Package ALD1117 DA ALD1117PA ALD1117 SA 14-Pin CERDIP 14-Pin Plastic Dip 14-Pin SOIC Package Package Package ALD1107 DB ALD1107 PB ALD1107 SB

ORDERING INFORMATION

• Contact factory for industrial temperature range. PIN CONFIGURATION BLOCK DIAGRAM D P2 GP2 SP2 G P3 SP3 G P1 SP1 D P4 G P4 DB, PB, SB PACKAGE 7 8 14D P1 V+V- D P3 SP4 1ALD1107 D P1 (1) D P2 (8)~ G P1 (2) SP1 (3) S P2 (6) V - (4) V+ (5) G P2 (7) ALD1117 D P2 GP2 SP2 G P1 SP1 DA, PA, SA PACKAGE 8D P1 V+V- 1ALD1117 © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ALD1107/ALD1117 Advanced Linear Devices 2 Voltage Offset Voltage V OS 2 10 2 10 mV I DS = -10µA VGS = VDS VGS1 -VGS2 Gate Threshold Temperature TC VT -1.3 -1.3 mV/ °C Drift2 On Drain I DS (ON) -1.3 -2 -1.3 -2 mA V GS = VDS = -5V Current Transconductance G IS 0.25 0.67 0.25 0.67 mmho V DS = -5V IDS = -10mA Mismatch ΔG fs 0.5 0.5 % Output G OS 40 40 µmho V DS = -5V IDS = -10mA Conductance Drain Source RDS (ON) 1200 1800 1200 1800 Ω VDS = -0.1V VGS = -5V On Resistance Drain Source On Resistance ΔR DS (ON) 0.5 0.5 % V DS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BV DSS -12 -12 V I DS = -1.0µA VGS = 0V Voltage Off Drain I DS (OFF) 10 400 10 400 pA V DS = -12V VGS = 0V Current1 44 n A T A = 125°C Gate Leakage I GSS 0.1 10 0.1 10 pA V DS = 0V VGS = -12V Current 1 1 nA T A = 125°C Input C ISS 13 1 3 p F Capacitance2 OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1107 ALD1117 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Notes: 1 Consists of junction leakage currents

2 Sample tested parameters

Drain-source voltage, VDS -13.2V Gate-source voltage, VGS -13.2V Power dissipation 500 mW Operating temperature range PA, SA, PB, SB package 0 °C to +70°C DA, DB package -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C

ALD1107/ALD1117 Advanced Linear Devices 3 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE CURRENT (mA) -10 -7.5 -5.0 -2.5 VBS = 0V TA = 25°C -10V -8V -6V -4V -2V VGS = -12V LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE CURRENT (µA) -320 -160 0 160 320 -500 500 250 -250 -4V VGS = -12V -6V VBS = 0V TA = 25°C -2V TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE SOURCE VOLTAGE (V) -20 -15 -10 DRAIN SOURCE CURRENT (µA) VBS = 0V 10V 12V VGS = VDS TA = 25°C -12 FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE DRAIN SOURCE VOLTAGE (V) 0- 8 -2 -6 -4 -10 FORWARD TRANSCONDUCTANCE (mmho) 1.0 0.5 0.2 0.1 0.05 0.02 0.01 VBS = 0V f = 1KHz IDS = -5mA TA = +125°CTA = +25°C IDS = -1mA GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE R DS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (KΩ ) 100 0.1 VDS = 0.4V VBS = 0V TA = +125°C TA = +25°C OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE ( °C) OFF DRAIN SOURCE CURRENT (pA) -50 -25 +25 +50 +75 +125 +1000 VDS = -12V VGS = VBS = 0V 100 1000

ALD1107/ALD1117 Advanced Linear Devices 4 DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS ISET R SET Q 3 V+ = +5V I SOURCE Q 1, Q2: N - Channel MOSFET Q 3, Q4: P - Channel MOSFET I SOURCE = ISET = V+ -Vt R SET = 4 R SET Q 1 Q 2 V+ = +5V Q 4 1/2 ALD1106 or ALD1116 1/2 ALD1107 or ALD1117 PMOS PAIR Q 4 VIN-NMOS PAIR Q 2Q 1VIN+ Current Source Q 3 Q 1, Q2: N - Channel MOSFET Q 3, Q4: P - Channel MOSFET VOUT 1/2 ALD1106 or ALD1116 1/2 ALD1107 or ALD1117 Q SET, Q 1..QN : ALD1106 or ALD1116 N - Channel MOSFET ISET V+ = +5V ISOURCE = ISET x N R SET Q 2 Q 3Q SET Q 1 Q N V+ = +5V Q 4 ISOURCER SET Q 1 Q 3 ISET ON OFF Digital Logic Control of Current Source Q 1 : N - Channel MOSFET Q 3,Q 4 : P - Channel MOSFET 1/2 ALD1107 or ALD1117 1/4 ALD1106 or 1/2 ALD1116

ALD1107/ALD1117 Advanced Linear Devices 5 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P- CHANNEL CURRENT SOURCEN- CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS ISOURCE V+ = +5V R SETISET Q 1 68Q 2 ISOURCE = ISET = V+ - Vt R SET = V+ - 1.0 R SET Q 1, Q 2 : N - Channel MOSFET ~ = 4 R SET 1/2 ALD1106 or ALD1116 V+ = +5V 23 5 Q 4 I SOURCE Q 3 R SETISET Q 3, Q4: P - Channel MOSFET 1/2 ALD1107 or ALD1117 ISET V+ = +5V Q 2 ISOURCE R SET Q 3 Q 1 Q 1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) Q 4 ALD1106 ISET V+ = +5V Q 1 Q 3 Q 2 Q 4 ISOURCE Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) ISOURCE = ISET = V+ - 2Vt R SET = 3 RSET R SET ALD1107