ALD1106 ALD | Alldatasheet

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Technical content

The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- ment mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. ADVANCED LINEAR D EVICES, INC. QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY ALD1106/ALD1116

APPLICATIONS

  • Precision current mirrors
  • Precision current sources
  • Voltage choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog signal processing BLOCK DIAGRAM

FEATURES

  • Low threshold voltage of 0.7V
  • Low input capacitance
  • Low Vos 2mV typical
  • High input impedance -- 10 14Ω typical
  • Negative current (IDS ) temperature coefficient
  • Enhancement-mode (normally off)
  • DC current gain 10
  • Low input and output leakage currents PIN CONFIGURATION D N2 GN2 SN2 G N1 SN1 DA, PA, SA PACKAGE 8D N1 V+V- ALD1116 D N1 (1) D N2 (8)~ G N1 (2) SN1 (3) S N2 (6) V+ (5) V- (4) G N2 (7) ALD1116 Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 8-Pin CERDIP 8-Pin Plastic Dip 8-Pin SOIC Package Package Package ALD1116 DA ALD1116 PA ALD1116 SA 14-Pin CERDIP 14-Pin Plastic Dip 14-Pin SOIC Package Package Package ALD1106 DB ALD1106 PB ALD1106 SB

ORDERING INFORMATION

  • Contact factory for industrial temperature range. BLOCK DIAGRAM D N1 (1) D N2 (14) G N1 (2) G N2 (13) D N3 (10) D N4 (5) G N3 (9) SN3 (8) S N4 (7) V+ (11) V- (4) G N4 (6) ALD1106 D N2 GN2 SN2 G N3 SN3 G N1 SN1 D N4 G N4 DB, PB, SB PACKAGE 7 8 14D N1 V+V- D N3 SN4 1ALD1106 © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ALD1106/ALD1116 Advanced Linear Devices 2 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS 13.2V Gate-source voltage, VGS 13.2V Power dissipation 500 mW Operating temperature range PA, SA, PB, SB package 0 °C to +70°C DA, DB package -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C Voltage Offset Voltage V OS 2 10 2 10 mV I DS = 10µA VGS = VDS VGS1 -VGS2 Gate Threshold Temperature TC VT -1.2 -1.2 mV/ °C Drift2 On Drain I DS (ON) 3.0 4.8 3.0 4.8 mA V GS = VDS = 5V Current Transconductance G IS 1.0 1.8 1.0 1.8 mmho V DS = 5V IDS = 10mA Mismatch ΔG fs 0.5 0.5 % Output G OS 200 200 µmho V DS = 5V IDS = 10mA Conductance Drain Source RDS (ON) 350 500 350 500 Ω VDS = 0.1V VGS = 5V On Resistance Drain Source On Resistence ΔDS (ON) 0.5 0.5 % V DS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BV DSS 12 12 V I DS = 1.0µA VGS = 0V Voltage Off Drain I DS (OFF) 10 400 10 400 pA V DS =12V VGS = 0V Current1 44 n A T A = 125°C Gate Leakage I GSS 0.1 10 0.1 10 pA V DS = 0V VGS = 12V Current 1 1 nA T A = 125°C Input C ISS 13 1 3 p F Capacitance2 OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1106 ALD1116 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Notes: 1 Consists of junction leakage currents

2 Sample tested parameters

ALD1106/ALD1116 Advanced Linear Devices 3 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (mA) VBS = 0V TA = 25°C VGS = 12V 10V DRAIN SOURCE VOLTAGE (V) 024 681 0 1 2 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE CURRENT (µA) -160 -80 0 80 160 -1000 1000 500 -500 VGS = 12V VBS = 0V TA = 25°C GATE SOURCE VOLTAGE (V) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN SOURCE CURRENT (µA) VBS = 0V -2V -4V -6V -8V -10V -12V VGS = VDS TA = 25°C GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE R DS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (KΩ ) 100 0.1 20 4 6 8 10 12 VDS = 0.2V VBS = 0V TA = +25°C TA = +125°C OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE ( °C) OFF DRAIN SOURCE CURRENT (pA) -50 -25 +25 +50 +75 +125 +1000 VDS = +12V VGS = VBS = 0V 100 1000 FORWARD TRANSCONDUCTANCE (mmho) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE DRAIN SOURCE VOLTAGE (V) 0.5 0.2 02 468 1 0 1 2 IDS = 1mA TA = +25°C IDS = 10mA TA = +125°C VBS = 0V f = 1KHz

ALD1106/ALD1116 Advanced Linear Devices 4