ALD1106_V01 Advanced-Linear-Devices | Alldatasheet
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Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ALD1106/ALD1116 ADVANCED LINEAR DEVICES, INC. QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- ment mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits.
APPLICATIONS
- Precision current mirrors
- Precision current sources
- Voltage choppers
- Differential amplifier input stage
- Voltage comparator
- Data converters
- Sample and Hold
- Analog signal processing BLOCK DIAGRAM
FEATURES
- Low threshold voltage of 0.7V
- Low input capacitance
- Low Vos 2mV typical
- High input impedance -- 10 14Ω typical
- Negative current (I DS) temperature coefficient
- Enhancement-mode (normally off)
- DC current gain 10 9
- Low input and output leakage currents
- RoHS compliant PIN CONFIGURATION DN2 GN2 SN2 GN1 SN1 4 5 8DN1 V+V- ALD1116 DN1 (1) DN2 (8)~ GN1 (2) SN1 (3) S N2 (6) V+ (5) V- (4) GN2 (7) ALD1116 DN2 GN2 SN2 GN3 SN3 GN1 SN1 DN4 GN4 7 8 14DN1 V+V- DN3 SN4 ALD1106 TOP VIEW SBL, PBL, DB PACKAGES TOP VIEW SAL, PAL, DA PACKAGES Operating Temperature Range* 0°C to +70°C0 °C to +70°C -55 °C to +125°C 8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP Package Package Package ALD1116SAL ALD1116PAL ALD1116DA 14-Pin SOIC 14-Pin Plastic Dip 14-Pin CERDIP Package Package Package ALD1106SBL ALD1106PBL ALD1106DB ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM DN1 (1) DN2 (14) GN1 (2) GN2 (13) DN3 (10) DN4 (5) GN3 (9) SN3 (8) S N4 (7) V+ (11) V- (4) GN4 (6) ALD1106
ALD1106/ALD1116 Advanced Linear Devices 2 of 11 Drain-source voltage, VDS 10.6V Gate-source voltage, VGS 10.6V Power dissipation 500mW Operating temperature range SAL, PAL, SBL, PBL packages 0 °C to +70°C DA, DB packages -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. ABSOLUTE MAXIMUM RATINGS Voltage Offset Voltage V OS 2 10 2 10 mV I DS = 10µA VGS = VDS VGS1-VGS2 Gate Threshold Temperature TC VT -1.2 -1.2 mV/ °C Drift2 On Drain I DS (ON) 3.0 4.8 3.0 4.8 mA V GS = VDS = 5V Current Transconductance GIS 1.0 1.8 1.0 1.8 mmho V DS = 5V IDS= 10mA Mismatch ∆Gfs 0.5 0.5 % Output G OS 200 200 µmho V DS = 5V IDS = 10mA Conductance Drain Source RDS (ON) 350 500 350 500 Ω VDS = 0.1V VGS = 5V On Resistance Drain Source On Resistence ∆DS (ON) 0.5 0.5 % V DS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BV DSS 12 12 V I DS = 1.0µA VGS = 0V Voltage Off Drain I DS (OFF) 10 400 10 400 pA V DS =12V VGS = 0V Current1 44 n A T A = 125°C Gate Leakage I GSS 0.1 10 0.1 10 pA V DS = 0V VGS = 12V Current 1 1 nA T A = 125°C Input C ISS 13 1 3 p F Capacitance 2 OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1106 ALD1116 Test Parameter Symbol Min Typ Max Min Typ Max Unit Conditions Notes: 1 Consists of junction leakage currents
2 Sample tested parameters
ALD1106/ALD1116 Advanced Linear Devices 3 of 11 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (mA) VBS = 0V TA = 25°C VGS = 12V 10V DRAIN SOURCE VOLTAGE (V) 024 681 0 1 2 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE CURRENT (µA) -160 -80 0 80 160 -1000 1000 500 -500 VGS = 12V VBS = 0V TA = 25°C GATE SOURCE VOLTAGE (V) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN SOURCE CURRENT (µA) VBS = 0V -2V -4V -6V -8V -10V -12V VGS = VDS TA = 25°C GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (KΩ) 100 0.1 20 4 6 8 10 12 VDS = 0.2V VBS = 0V TA = +25°C TA = +125°C OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE (°C) OFF DRAIN SOURCE CURRENT (pA) -50 -25 +25 +50 +75 +125 +1000 VDS = +12V VGS = VBS = 0V 100 1000 FORWARD TRANSCONDUCTANCE (mmho) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE DRAIN SOURCE VOLTAGE (V) 0.5 0.2 02 468 1 0 1 2 IDS = 1mA TA = +25°C IDS = 10mA TA = +125°C VBS = 0V f = 1KHz
ALD1106/ALD1116 Advanced Linear Devices 4 of 11 DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS ISET RSET V+ = +5V I SOURCE Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET I SOURCE = ISET = V+ -Vt RSET = 4 RSET Q1 Q2 V+ = +5V ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117 PMOS PAIR VIN-NMOS PAIR Q2Q1VIN+ Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET VOUT ALD1101, 1/2 ALD1106, or ALD1116 ALD1102, 1/2 ALD1107, or ALD1117 V+ = +5V ISOURCERSET ISET ON OFF Digital Logic Control of Current Source Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 1/2 ALD1101, 1/4 ALD1106, or 1/2 ALD1116 QSET, Q1..QN: ALD1101, ALD1106, or ALD1116 N - Channel MOSFET ISET V+ = +5V ISOURCE = ISET x N RSET Q2 Q3QSET Q1 QN
ALD1106/ALD1116 Advanced Linear Devices 5 of 11 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P- CHANNEL CURRENT SOURCEN- CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS (cont.) ISOURCE V+ = +5V RSETISET 68Q2 ISOURCE = ISET = V+ - Vt RSET = V+ - 1.0 RSET Q1, Q2 : N - Channel MOSFET ~ = 4 RSET ALD1101, 1/2 ALD1106, or ALD1116 ISET V+ = +5V ISOURCE RSET Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) 2 x ALD1101 or ALD1106 V+ = +5V 23 5 I SOURCE RSETISET Q3, Q4: P - Channel MOSFET ALD1102, 1/2 ALD1107, or ALD1117 ISET V+ = +5V ISOURCE Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) ISOURCE = ISET = V+ - 2Vt RSET = 3 RSET RSET 2 x ALD1102 or ALD1107
ALD1106/ALD1116 Advanced Linear Devices 6 of 11
8 Pin Plastic SOIC Package
A b C D-8 E e H L S 1.75 0.25 0.45 0.25 5.00 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.185 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.196 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 4.69 3.50 5.70 0.60 0.25 ø L CH S (45°) ø e A b D S (45°) E
ALD1106/ALD1116 Advanced Linear Devices 7 of 11
8 Pin Plastic DIP Package
S b E E1 D e A L c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-8 E e L S-8 ø 3.81 0.38 1.27 0.89 0.38 0.20 9.40 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 11.68 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.370 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.460 0.280 0.325 0.110 0.310 0.150 0.080 15°
ALD1106/ALD1116 Advanced Linear Devices 8 of 11
8 Pin CERDIP Package
A b C D-8 E e L S Ø 3.55 1.27 0.97 0.36 0.20 5.59 7.73 3.81 3.18 0.38 5.08 2.16 1.65 0.58 0.38 10.29 7.87 8.26 5.08 1.78 2.49 15° Millimeters Inches Min Max Min MaxDim 0.140 0.050 0.038 0.014 0.008 0.220 0.290 0.150 0.125 0.015 0.200 0.085 0.065 0.023 0.015 0.405 0.310 0.325 0.200 0.070 0.098 15°
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
C ø s b L D e A
ALD1106/ALD1116 Advanced Linear Devices 9 of 11 Millimeters Inches Min Max Min MaxDim A b C D-14 E e H L S 1.75 0.25 0.45 0.25 8.75 4.05 6.30 0.937 0.50 0.053 0.004 0.014 0.007 0.336 0.140 0.224 0.024 0.010 0.069 0.010 0.018 0.010 0.345 0.160 0.248 0.037 0.020 1.27 BSC 0.050 BSC 1.35 0.10 0.35 0.18 8.55 3.50 5.70 0.60 0.25 ø
14 Pin Plastic SOIC Package
E D e A b S (45°) L CH S (45°) ø
ALD1106/ALD1116 Advanced Linear Devices 10 of 11
14 Pin Plastic DIP Package
D S b e A L E E1 c e1 ø Millimeters Inches Min Max Min MaxDim A b c D-14 E e L S-14 ø 3.81 0.38 1.27 0.89 0.38 0.20 17.27 5.59 7.62 2.29 7.37 2.79 1.02 5.08 1.27 2.03 1.65 0.51 0.30 19.30 7.11 8.26 2.79 7.87 3.81 2.03 15° 0.105 0.015 0.050 0.035 0.015 0.008 0.680 0.220 0.300 0.090 0.290 0.110 0.040 0.200 0.050 0.080 0.065 0.020 0.012 0.760 0.280 0.325 0.110 0.310 0.150 0.080 15°
ALD1106/ALD1116 Advanced Linear Devices 11 of 11 E E1 C ø D s e b L A A b C D-14 E e L S Ø 3.55 1.27 0.97 0.36 0.20 5.59 7.73 3.81 3.18 0.38 5.08 2.16 1.65 0.58 0.38 19.94 7.87 8.26 5.08 1.78 2.49 15° Millimeters Inches Min Max Min MaxDim 0.140 0.050 0.038 0.014 0.008 0.220 0.290 0.150 0.125 0.015 0.200 0.085 0.065 0.023 0.015 0.785 0.310 0.325 0.200 0.070 0.098 15°