ALD1103SB

ALD1103 ALD | Alldatasheet

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DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package. The ALD1103 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1103 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

FEATURES

• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 10 13Ω typical
• Low input and output leakage currents
• Negative current (IDS ) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10
• Matched N-channel and matched P-channel in one package ALD1103 ADVANCED LINEAR D EVICES, INC. PIN CONFIGURATION

APPLICATIONS

• Precision current mirrors
• Complementary push-pull linear drives
• Analog switches
• Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
• Precision matched current sources DN2 GN2 SN2 GP2 SP2 GN1 SN1 DP1 GP1 DB, PB, SB PACKAGE 7 8 14DN1 V+V- DP2 SP1 BLOCK DIAGRAM N SOURCE 1 (3) SUBSTRATE (4) N SOURCE 2 (12) N GATE 2 (13) N DRAIN 1 (1) N GATE 1 (2) N DRAIN 2 (14) P SOURCE 1 (7) SUBSTRATE (11) P SOURCE 2 (8) P GATE 2 (9) P DRAIN 1 (5) P GATE 1 (6) P DRAIN 2 (10) Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 14-Pin 14-Pin 14-Pin CERDIP Plastic Dip SOIC Package Package Package ALD1103 DB ALD1103 PB ALD1103 SB * Contact factory for industrial temperature range.

ORDERING INFORMATION

© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ALD1103 Advanced Linear Devices 2 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS 13.2V Gate-source voltage, VGS 13.2V Power dissipation 500 mW Operating temperature range PB, SB package 0 °C to +70°C DB package -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C Voltage Offset Voltage VOS 10 mV I DS = 100µA VGS = VDS 10 mV I DS = -100µA VGS = VDS VGS1 - VGS2 Gate Threshold Temperature TC VT -1.2 mV/ °C -1.3 mV/ °C Drift On Drain I DS (ON) 25 40 mA V GS = VDS = 5V -8 -16 mA V GS = VDS = -5V Current Trans-. G fs 5 10 mmho V DS = 5V IDS = 10mA 2 4 mmho V DS = -5V IDS = -10mA conductance Mismatch ΔG fs 0.5 % 0.5 % Output G OS 200 µmho V DS = 5V IDS = 10mA 500 µmho V DS = -5V IDS = -10mA Conductance Drain Source R DS(ON) 50 75 Ω VDS = 0.1V VGS = 5V 180 270 Ω VDS = -0.1V VGS = -5V ON Resistance Drain Source ON Resistance ΔR DS(ON) 0.5 % V DS = 0.1V VGS = 5V 0.5 % V DS = -0.1V VGS = -5V Mismatch Drain Source Breakdown BV DSS 12 V I DS = 10µA VGS =0V -12 V I DS = -10µA VGS =0V Voltage Off Drain I DS(OFF) 0.1 4 nA V DS =12V IGS = 0V 0.1 4 nA V DS = -12V VGS = 0V Current 4 µAT A = 125°C4 µAT A = 125°C Gate Leakage I GSS 15 0 p A V DS = 0V VGS =12V 1 50 pA V DS = 0V VGS =-12V Current 10 nA T A = 125°C1 0 n A T A = 125°C Input C ISS 61 0 p F 6 1 0 p F Capacitance OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified N - Channel Test P - Channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions

ALD1103 Advanced Linear Devices 3 P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN - SOURCE VOLTAGE (V) DRAIN - SOURCE CURRENT (mA) -80 -60 -40 -20 VBS = 0V TA = 25°C -10V -8V -6V -4V -2V VGS = -12V LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN -SOURCE VOLTAGE (mV) DRAIN-SOURCE CURRENT (mA) -320 -160 0 160 320 -4V VGS = -12V -6V VBS = 0V TA = 25°C -2V -12 FORWARD TRANSCONDUCTANCE vs. DRAIN - SOURCE VOLTAGE DRAIN - SOURCE VOLTAGE (V) 0- 8 -2 -6 -4 -10 FORWARD TRANSCONDUCTANCE (µmho) 10000 5000 2000 1000 500 200 100 VBS = 0V f = 1KHz IDS = -5mA TA = +125°CTA = +25°C IDS = -1mA TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS GATE - SOURCE VOLTAGE (V) -20 -15 -10 DRAIN-SOURCE CURRENT (µA) VBS = 0V 10V 12V VGS = VDS TA = 25°C GATE - SOURCE VOLTAGE (V) RDS (ON) vs. GATE - SOURCE VOLTAGE DRAIN - SOURCE ON RESISTANCE (Ω ) 10000 1000 100 VDS = 0.4V VBS = 0V TA = +125°C TA = +25°C OFF DRAIN - CURRENT vs. TEMPERATURE TEMPERATURE ( °C) OFF - DRAIN SOURCE CURRENT (A) -50 -25 +25 +50 +75 +125 +1000 -10X10-6 VDS = -12V VGS = VBS = 0V -10X10-12 -10X10-9

ALD1103 Advanced Linear Devices 4 N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN -SOURCE CURRENT (mA) 160 120 VBS = 0V TA = 25°C VGS = 12V 10V DRAIN-SOURCE VOLTAGE (V) 024 681 0 1 2 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN -SOURCE VOLTAGE (mV) DRAIN-SOURCE CURRENT (mA) -160 -80 0 80 160 VGS = 12V VBS = 0V TA = 25°C FORWARD TRANSCONDUCTANCE (µmho) FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE DRAIN -SOURCE VOLTAGE (V) 1 x105 5 x104 1 x104 5 x103 2 x103 2 x104 1 x103 TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA 02 468 1 0 1 2 VBS = 0V f = 1KHz GATE - SOURCE VOLTAGE (V) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN-SOURCE CURRENT (µA) VBS = 0V -2V -4V -6V -8V -10V -12V VGS = VDS TA = 25°C GATE SOURCE VOLTAGE (V) RDS (ON) vs. GATE - SOURCE VOLTAGE DRAIN - SOURCE ON RESISTANCE (Ω ) 10000 1000 100 20 4 6 8 10 12 VDS = 0.2V VBS = 0V TA = +25°C TA = +125°C OFF DRAIN - CURRENT vs. TEMPERATURE TEMPERATURE ( °C) OFF - DRAIN SOURCE CURRENT (A) -50 -25 +25 +50 +75 +125 +1000 10X10-6 VDS = +12V VGS = VBS = 0V 10X10-12 10X10-9

ALD1103 Advanced Linear Devices 5 DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL TYPICAL APPLICATIONS ISET R SET Q 3 V+ = +5V I SOURCE Q 1, Q2: N - Channel MOSFET Q 3, Q4: P - Channel MOSFET I SOURCE = ISET = V+ -Vt R SET = 4 R SET Q 1 Q 2 V+ = +5V Q 4 ALD1103 PMOS PAIR Q 4 VOUT VIN-NMOS PAIR Q 2Q 1VIN+ Current Source Q 3 Q 1, Q2: N - Channel MOSFET Q 3, Q4: P - Channel MOSFET ALD1103 Q SET, Q 1..QN : ALD 1101 or ALD 1103 N - Channel MOSFET ISET V+ = +5V ISOURCE = ISET x N R SET Q 2 Q 3Q SET Q 1 Q N V+ = +5V Q 4 ISOURCER SET Q 1 Q 3 ISET ON OFF Digital Logic Control of Current Source Q 1 : N - Channel MOSFET Q 3,Q 4 : P - Channel MOSFET 1/2 ALD1103 1/4 ALD1103

ALD1103 Advanced Linear Devices 6 CASCODE CURRENT SOURCES BASIC CURRENT SOURCES P- CHANNEL CURRENT SOURCEN- CHANNEL CURRENT SOURCE TYPICAL APPLICATIONS ISOURCE V+ = +5V R SETISET Q 1 68Q 2 ISOURCE = ISET = V+ - Vt R SET = V+ - 1.0 R SET Q 1, Q 2 : N - Channel MOSFET 1/2 ALD1103 ~ = 4 R SET V+ = +5V 23 5 Q 4 I SOURCE Q 3 R SETISET 1/2 ALD1103 Q 3, Q4: P - Channel MOSFET ISET V+ = +5V Q 2 ISOURCE R SET Q 3 Q 1 Q 1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) Q 4 ISET V+ = +5V Q 1 Q 3 Q 2 Q 4 ISOURCE Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) ISOURCE = ISET = V+ - 2Vt R SET = 3 RSET R SET