ALD1101 ALD | Alldatasheet

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Technical content

The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancement- mode transistors are manufactured with Advanced Linear Devices' en- hanced ACMOS silicon gate CMOS process. The ALD1101 offers high input impedance and negative current tempera- ture coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000. ADVANCED LINEAR D EVICES, INC. DUAL N-CHANNEL MATCHED MOSFET PAIR ALD1101A/ALD1101B ALD1101

APPLICATIONS

  • Precision current mirrors
  • Precision current sources
  • Analog switches
  • Choppers
  • Differential amplifier input stage
  • Voltage comparator
  • Data converters
  • Sample and Hold
  • Analog inverter

FEATURES

  • Low threshold voltage of 0.7V
  • Low input capacitance
  • Low Vos grades -- 2mV, 5mV, 10mV
  • High input impedance -- 10 12Ω typical
  • Negative current (IDS ) temperature coefficient
  • Enhancement-mode (normally off)
  • DC current gain 10 Operating Temperature Range* -55°C to +125°C0 °C to +70°C0 °C to +70°C 8-Pin 8-Pin 8-Pin CERDIP Plastic Dip SOIC Package Package Package ALD1101A PA ALD1101B PA ALD1101 DA ALD1101 PA ALD1101 SA * Contact factory for industrial temperature range.

ORDERING INFORMATION

SOURCE 1 (1) SUBSTRATE (8) SOURCE 2 (7) GATE 2 (6) DRAIN 1 (3) GATE 1 (2) DRAIN 2 (5) PIN CONFIGURATION SOURCE 1 GATE 1 DRAIN 1 NC SUBSTRATE SOURCE 2 GATE 2 DRAIN 2 TOP VIEW DA, PA, SA PACKAGE © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ALD1101A/ALD1101B Advanced Linear Devices 2 ALD1101 ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS 13.2V Gate-source voltage, VGS 13.2V Power dissipation 500 mW Operating temperature range PA, SA package 0 °C to +70°C DA package -55 °C to +125°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C Gate Threshold Offset Voltage V OS 2 5 10 mV I DS = 100µA VGS = VDS VGS1 - VGS2 Gate Threshold TC VT -1.2 -1.2 -1.2 mV/ °C Temperature Drift On Drain Current IDS (ON) 25 40 25 40 25 40 mA V GS = VDS = 5V Transconductance Gfs 5 10 5 10 5 10 mmho V DS = 5V IDS = 10mA Mismatch ΔG fs 0.5 0.5 0.5 % Output G OS 200 200 200 µmho V DS = 5V IDS = 10mA Conductance Drain Source R DS(ON) 50 75 50 75 50 75 Ω VDS = 0.1V VGS = 5V ON Resistance Drain Source ON Resistance ΔR DS(ON) 0.5 0.5 0.5 % V DS = 0.1V VGS = 5V Mismatch Drain Source Breakdown BV DSS 12 12 12 V I DS = 10µA VGS =0V Voltage Off Drain Current IDS(OFF) 0.1 4 0.1 4 0.1 4 nA V DS =12V VGS = 0V 444 µAT A = 125°C Gate Leakage I GSS 15 0 1 5 0 1 5 0 p A V DS =0V VGS =12V Current 10 10 10 nA T A = 125°C Input C ISS 6 10 6 10 6 10 pF Capacitance OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD 1101A ALD1101B ALD1101 Test Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions

ALD1101A/ALD1101B Advanced Linear Devices 3 ALD1101 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS DRAIN -SOURCE CURRENT (mA) 160 120 VBS = 0V TA = 25°C VGS = 12V 10V DRAIN-SOURCE VOLTAGE (V) 024 681 0 1 2 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN -SOURCE VOLTAGE (mV) DRAIN-SOURCE CURRENT (mA) -160 -80 0 80 160 VGS = 12V VBS = 0V TA = 25°C FORWARD TRANSCONDUCTANCE (µmho) FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE DRAIN -SOURCE VOLTAGE (V) 1 x105 5 x104 1 x104 5 x103 2 x103 2 x104 1 x103 TA = +125°C TA = +25°C IDS = 10mA IDS = 1mA 02 468 1 0 1 2 VBS = 0V f = 1KHz GATE - SOURCE VOLTAGE (V) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN-SOURCE CURRENT (µA) VBS = 0V -2V -4V -6V -8V -10V -12V VGS = VDS TA = 25°C GATE SOURCE VOLTAGE (V) RDS (ON) vs. GATE - SOURCE VOLTAGE DRAIN - SOURCE ON RESISTANCE (Ω ) 10000 1000 100 20 4 6 8 10 12 VDS = 0.2V VBS = 0V TA = +25°C TA = +125°C OFF DRAIN - CURRENT vs. TEMPERATURE TEMPERATURE ( °C) OFF - DRAIN SOURCE CURRENT (A) -50 -25 +25 +50 +75 +125 +1000 10X10-6 VDS = +12V VGS = VBS = 0V 10X10-12 10X10-9

ALD1101A/ALD1101B Advanced Linear Devices 4 ALD1101