ADT3C60E ADV | Alldatasheet
Document overview
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Technical content
Features
Repetitive Peak Off◆ -State Voltage: 600Vand800V R.M.S On◆ -State Current ( IT(RMS)= 3A ) High Commutation dv/dt◆ ◆ These Devices are Pb-Free and are RoHS Compliant Absolute Maximum Ratings Scan the QR code to view the latest product information ADV
2 / 6 www.advsemi.com Feb,2013 -Rev.3.02 ADV Electrical Characteristics ( Tj = 25°C unless otherwise specified ) Symbol Items Conditions ADT3C60E/80E Unit T S Blank B IDRM IRRM Peak Forward Reverse Blocking Current VDRM = VRRM, Tj = 25°C Max. 5 uA VDRM = VRRM, Tj = 125°C 1 mA VTM Peak On-State Voltage I TM = 5A, tp = 380 μs Max. 1.55 V VGD Q1-Q2-Q3 Non−Trigger Gate Voltage VD = VDRM R L = 3.3 kΩ Tj = 125°C Min. 0.2 V VGT Q1-Q2-Q3 Gate Trigger Voltage VD = 12V ,RL = 33Ω Max. 1.3 V IGT Q1-Q2-Q3 Gate Trigger Current Max. 5 10 35 50 mA IH Q1-Q2-Q3 Holding Current I T = 0.1A Max. 10 15 40 60 mA IL Q1-Q3 Latching Current I G = 1.2 IGT Max. 10 25 50 70 mA Q2 15 30 70 80 dV/dt Critical Rate of Rise of Off-State Voltage VD = 2/3VDRM gate open Tj = 125°C Min. 20 40 400 1000 V/ μs (dV/dt)c Rate of Change of Commutating Current, (dI/dt)c=-1.7A/ms Tj = 125°C Min. 0.5 1 10 25 V/ μs Rth(j-c) Junction to case (AC) Max. 3.0 ° C/W Rth(j-a) Junction to ambient(Copper surface under tab:S=0.5cm 2) Max. 70 ° C/W V A VD RGV A VD RGV A VD RG V A VD RG RL T2+ T2- Q1(T2+G+) Q3(T2-G-) Q2(T2+G-) RL RL G+G- FIG.1:Triac quadrant are defined and the gate trigger test circuit
3 / 6 www.advsemi.com Feb,2013 -Rev.3.02 ADV FIG.3: Typical RMS on-state current VS Allowable case Temperature FIG.4: Maximum transient thermal impedance FIG.2: Maximum on-state power dissipation FIG.5: Rated surge on-state current ( Non-Repetitive) FIG.6: Gate trigger current VS Junction temperature 0 50 100 150 200 250 IGT(Tj)/IGT(25°C) x 100(%) 150 125 100 -50 -25 Tj(°C),Junction Temperature 0.1 1 10 Rth(j-c)(°C/W),Transient Thermal Impedance 101 102 103 104 105 tp(ms),Conduction Time 0 5 10 15 20 25 30 35 40 ITSM(A),Surge On-State Current 102 Number Of Cycles f=50Hz f=60Hzf=60Hzf=60Hzf=60Hz Tj=25°C Max R.M.S On-State Current (A) Power Dissipation(W) R.M.S On-State Current (A) Power Dissipation(W) 0 1 2 3 4 5 360° Full Cycle 0 1 2 3 4 5 R.M.S On-state Current(A) 150 120
0 Tc(°C),Case Temperature
360° Full Cycle
4 / 6 www.advsemi.com Feb,2013 -Rev.3.02 ADV FIG.7:Holding current and Latching current VS Junction temperature FIG.8: Gate trigger voltage VS Junction tem perature FIG.9: On-state characteristics(Max) 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature IH,IL(Tj)/IH,IL(25°C) x 100(%) 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature 0 50 100 150 200 250 150 125 100 -50 -25 Tj(°C),Junction Temperature VGT(Tj)/VGT(25°C) x 100(%) ITM(A),On-State Current 10-1 100 101 102 3.5 2.5 1.5
0.5 VTM(V),On-State Voltage (1)
(2) (1)Tj=25°C Max (2)Tj=125°C Max
5 / 6 www.advsemi.com Feb,2013 -Rev.3.02 ADV PACKAGE MECHANICAL DATA Making Diagram
Ordering information
Part number Package Marking Packing Quantity ADT3C60E# TO-252-2 ADT3C60E# Tube 80pcs Embossed tape 2500pcs ADT3C80E# TO-252-2 ADT3C80E# Tube 80pcs Embossed tape 2500pcs Note:# = Gate Trigger Current Sensitivity and type Symb ol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.450 0.620 0.017 0.024 c1 0.450 0.620 0.017 0.024 D 6.350 6.650 0.250 0.262 D1 5.100 5.400 0.200 0.213 E 5.900 6.200 0.232 0.244 e 2.300 TYP. 0.091 TYP. e1 4.500 4.700 0.177 0.185 L 9.500 10.60 0.374 0.396 L1 2.550 2.900 0.100 0.114 L2 1.400 1.780 0.055 0.070 L3 0.600 0.900 0.024 0.035 V 4.100 REF. 0.161 REF. D B A c L e b EL1 V ADV ADT3C80ET XXXX XXXH XX ADV:Logo ADT3C80ET:Part number X:Internal control code H:Halogen Free
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