ADN2004AS ADV | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

1 / 6 www.advsemi.com Ver.0.11 ADV N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to150 °C IS Diode Continuous Forward Current T C =25°C 28 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested （2） TC=25°C 112 A ID Continuous Drain Current （1） TC=25°C 28 A TC=100°C 22.5 A PD Maximum Power Dissipation T C=25°C 3.1 W Thermal Characteristics Symbol Parameter Ratings Unit RthJC Thermal resistance junction-case max （1） 6.9 °C/W RthJA Thermal resistance junction-ambient max （1） 50 °C/W VDSS I D RDS(ON) (mΩ) 20V 28A 4.0mΩ SOP-8 S S S G D D D D

2 / 6 www.advsemi.com Ver.0.11 ADV Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250uA 20 -- -- V IDSS Zero Gate Voltage Drain Current VDS= 20V, VGS=0V -- -- 1 uA VGS(th) Gate Threshold Voltage V DS=VGS, IDS=250uA 0.45 0.68 1.0 V IGSS Gate Leakage Current VGS=±12V, VDS=0V -- -- ±100 nA RDS(ON) Drain-SourceOn-stateResistance⑵ VGS= 2.5V, IDS=15A -- 3.5 4.5 VGS= 4.5V, IDS=20A -- 3.1 4 Dynamic Characteristics Ciss Input Capacitance V GS=0V, VDS= 10V, Frequency=1.0MHz -- 2500 -- pF Coss Output Capacitance -- 580 -- Crss Reverse Transfer Capacitance -- 315 -- Switching Characteristics td(ON) Turn-on Delay Time⑴ VDD=10V, ID= 20A, VGS= 4.5V, RGEN=3Ω -- 11 -- ns tr Turn-on Rise Time⑴ -- 32 -- td(OFF) Turn-off Delay Time⑴ -- 32 -- tf Turn-off Fall Time⑴ -- 25 -- Qg Total Gate Charge⑴ VDS=10V, VGS= 4.5V, IDS=20A -- 24 -- nC Qgs Gate-Source Charge⑴ -- 8.2 -- Qgd Gate-Drain Charge⑴ -- 15.6 -- Diode Characteristics VSD Diode Forward Voltage⑵ ISD = 10A, VGS = 0 -- -- 1.2 V NOTES: 1. Independent of oper ating temperature. 2. Pulse Test : Pulse width ≤ 300 μs, Duty cycle ≤ 2%

5 / 6 www.advsemi.com Ver.0.11 ADV Test circuits and Waveforms

6 / 6 www.advsemi.com Ver.0.11 ADV Part number Package Marking Packing Quantity ADN2004A SOP-8 N2004AS Tape&reel 4000pcs PACKAGE MECHANICAL DATA

Ordering information

A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E1 5.800 6.200 0.228 0.244 E 3.800 4.000 0.150 0.157 e 1.270TYP 0.050TYP e1 4.500 4.700 0.177 0.185 L 0.400 1.270 0.016 0.050 D b e A L E c