ADM100N06 ADV | Alldatasheet

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Technical content

1 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Features:

  • Low Gate Charge for Fast Switching Application
  • Low R DS(ON) to Minimize Conductive Loss
  • 100% EAS Guaranteed
  • Fast Recovery Body Diode
  • Lead-Free,RoHS Compliant Description: The ADM100N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new techno logy achieves low Rdson, energy sa ving, high reliability and uniformity, superior power density and space saving. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage 65 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current T C =25°C 98 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested （2） TC=25°C 1059 A ID Continuous Drain Current （1） Silicon Limited 98 A Package Limited 69 A PD Maximum Power Dissipation T C=25°C 158 W Thermal Characteristics Symbol Parameter Ratings Unit RthJC Thermal resistance junction-case max （1） 0.95 °C/W RthJA Thermal resistance junction-ambient max （1） 62 °C/W VDSS I D RDS(ON) (mΩ) 60V 98A 8.0mΩ TO220C

2 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, IDS=250uA 65 -- -- V IDSS Zero Gate Voltage Drain Current VDS=50V,VGS=0V ,TJ=25°C -- -- 5 uA VDS=50V,VGS=0V , TJ=125°C -- -- 100 VGS(th) Gate Threshold Voltage V DS=VGS, IDS=250uA 2 4 V IGSS Gate Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA RDS(ON) Drain-SourceOn-stateResistance （2） VGS= 10V, IDS=80A -- 6.2 8.0 m Dynamic Characteristics Ciss Input Capacitance V GS=0V, VDS=25V, Frequency=1MHz -- 3.26 -- nF Coss Output Capacitance -- 0.30 -- Crss Reverse Transfer Capacitance -- 0.12 -- Switching Characteristics td(ON) Turn-on Delay Time V DS=30V, ID= 40A, VGS= 10V, RGEN=10Ω -- 19 -- ns tr Turn-on Rise Time -- 82 -- td(OFF) Turn-off Delay Time -- 58 -- tf Turn-off Fall Time -- 45 -- Qg Total Gate Charge V DS=30V, VGS= 10V, IDS=80A -- 48 -- nC Qgs Gate-Source Charge -- 15 -- Qgd Gate-Drain Charge -- 11 -- Avalanche Characteristics EAS Single Pulse Avalanche Energy （3） VDD=30V,L=1mH ,VGS=10V ,Rg=25Ω 145 -- -- mJ Diode Characteristics VSD Diode Forward Voltage （2） ISD = 80A, VGS = 0 -- 1.0 1.3 V trr Reverse Recovery Time ISD=80A, dlSD/dt=100A/s -- 60 -- ns qrr Reverse Recovery Charge -- 67.5 -- nC NOTES: 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The Min. value is 100% EAS tested guarantee.

3 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV Typical Performance Characteristics

4 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV

5 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV

6 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV Test circuits and Waveforms

7 / 7 www.advsemi.com Feb,2014 -Rev.3.01 ADV PACKAGE MECHANICAL DATA

Ordering information

e 2.54 TYP 0.099TYP A 4.10 4.70 0.161 0.185 A1 1.25 1.40 0.049 0.055 b 0.60 0.90 0.023 0.035 C 0.40 0.70 0.016 0.027 D 15.20 16.00 0.598 0.630 D1 5.90 6.60 0.232 0.259 E 9.70 10.30 0.382 0.405 L 12.80 15.00 0.504 0.590 L1 2.79 3.30 0.110 0.130 R 3.50 3.80 0.138 0.149 T 2.70 3.00 0.106 0.118 Q 2.20 2.60 0.086 0.102 L2 3.00 0.118 e e b(3x) R E T D L A Q C Part number Package Marking Packing Quantity ADM100N06 TO-220C ADM100N06 Tube 50pcs