ADM045N03A ADV | Alldatasheet
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1 / 6 www.advsemi.com Ver.0.11 ADV N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to150 °C IS Diode Continuous Forward Current T C =25°C 20 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested (2) TC=25°C 80 A ID Continuous Drain Current (1) TC=25°C 20 A TC=100°C 13 A PD Maximum Power Dissipation T C=25°C 4 W Thermal Characteristics Symbol Parameter Ratings Unit RthJC Thermal resistance junction-case max (1) 4.9 °C/W RthJA Thermal resistance junction-ambient max (1) 31.3 °C/W VDSS I D RDS(ON) (mΩ) 30V 20A 6.0mΩ SOP-8 S S S G D D D D
2 / 6 www.advsemi.com Ver.0.11 ADV Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250uA 30 -- -- V IDSS Zero Gate Voltage Drain Current VDS= 24V, VGS=0V -- -- 1 uA VDS=24V, VGS=0V TJ=55°C -- -- 5 VGS(th) Gate Threshold Voltage V DS=VGS, IDS=250uA 0.7 1.0 1.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA RDS(ON) Drain-SourceOn-stateResistance⑵ VGS= 10V, IDS=20A -- 4.6 6.0 VGS= 4.5V, IDS=10A -- 6.1 8.6 Dynamic Characteristics Ciss Input Capacitance V GS=0V, VDS= 15V, Frequency=1.0MHz -- 1700 -- pF Coss Output Capacitance -- 320 -- Crss Reverse Transfer Capacitance -- 300 -- Switching Characteristics td(ON) Turn-on Delay Time⑴ VDD=15V, ID= 20A, VGS= 10V, RGEN=3Ω -- 21 -- ns tr Turn-on Rise Time⑴ -- 32 -- td(OFF) Turn-off Delay Time⑴ -- 59 -- tf Turn-off Fall Time⑴ -- 34 -- Qg Total Gate Charge⑴ VDS=15V, VGS= 10V, IDS=10A -- 45 -- nC Qgs Gate-Source Charge⑴ -- 3 -- Qgd Gate-Drain Charge⑴ -- 15 -- Diode Characteristics VSD Diode Forward Voltage⑵ ISD = 20A, VGS = 0 -- -- 1.2 V trr Reverse Recovery Time ISD=20A, dlSD/dt=100A/s -- 15 -- ns qrr Reverse Recovery Charge -- 4 -- nC NOTES: 1. Independent of oper ating temperature. 2. Pulse Test : Pulse width ≤ 300 μs, Duty cycle ≤ 2%
3 / 6 www.advsemi.com Ver.0.11 ADV Typical Performance Characteristics
4 / 6 www.advsemi.com Ver.0.11 ADV
5 / 6 www.advsemi.com Ver.0.11 ADV Test circuits and Waveforms
6 / 6 www.advsemi.com Ver.0.11 ADV Part number Package Marking Packing Quantity ADM045N03A SOP-8 045N03A Tape&reel 4000pcs PACKAGE MECHANICAL DATA
Ordering information
A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E1 5.800 6.200 0.228 0.244 E 3.800 4.000 0.150 0.157 e 1.270TYP 0.050TYP e1 4.500 4.700 0.177 0.185 L 0.400 1.270 0.016 0.050 D b e A L E c