ADE4D20120D ANALOGPOWER | Alldatasheet

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Technical content

VBR (V) VF (V) IF(AV) (A) 1200 1.85 20 Symbol Limit Units VBR 1200 V TC=25°C IF(AV) 20 / 40 A TC=25°C IFSM 90 A i2t 40 A²∙s Power Dissipation a d TC=25°C PD 52 / 104 W Tstg -55 to 175 °C TJ -40 to 175 °C Symbol Maximum Units RθJA 40 RθJC 2.9 / 1.45 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. d. Per leg / Per device Maximum Junction-to-Ambient c Maximum Junction-to-Case d THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction Temperature Storage Temperature Range Diode Forward Current a d Single Pulse Forward Current b Joule Integral Parameter Cathode-Anode Voltage PRODUCT SUMMARY ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Key Features:

  • SiC performance
  • Easy paralleling
  • High current carrying capability
  • Very low junction capacitance
  • Highly stable VF and QRR at elevated temperatures Typical Applications:
  • Soft switching topologies
  • Secondary side rectification TO-247-3L 1 2 3 Case © Preliminary 1 Publication Order Number: DS_ADE4D20120D_1A

Parameter Symbol Test Conditions Min Typ Max Unit IF = 20 A 1.85 IF = 20 A, TJ = 150°C 1.92 Repetitive Peak Reverse Voltage VRRM TJ = -40°C to 150°C 1200 V VR = 1200 V 10 uA VR = 1200 V, TJ = 120°C 60 uA Reverse Recovery Time Trr 84 ns Reverse Recovery Charge Qrr 213 nC Peak Recovery Current IRRM 4.3 A Reverse Recovery Time Trr 82 ns Reverse Recovery Charge Qrr 197 nC Peak Recovery Current IRRM 3.9 A Reverse Recovery Time Trr 47 ns Reverse Recovery Charge Qrr 482 nC Peak Recovery Current IRRM 17.9 A Reverse Recovery Time Trr 45 ns Reverse Recovery Charge Qrr 435 nC Peak Recovery Current IRRM 15.9 A Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Reverse Leakage Current IR IF = 20 A, dI/dt = 100 A/us, VR = 800 V, TJ = 25°C IF = 20 A, dI/dt = 100 A/us, VR = 800 V, TJ = 150°C IF = 20 A, dI/dt = 500 A/us, VR = 800 V, TJ = 25°C Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Static

Electrical Characteristics

IF = 20 A, dI/dt = 500 A/us, VR = 800 V, TJ = 150°C Dynamic b CJ VR = 200 V, Vsine = 0.6 Veff, f = 100 kHz 12Junction Capacitance © Preliminary 2 Publication Order Number: DS_ADE4D20120D_1A

  1. Forward Characteristics 2. Reverse Characteristics 3. Current Derating 4. Power Derating 5. Junction Capacitance vs. Reverse Voltage 6. Total Capacitance Charge vs. Reverse Voltage Typical Electrical Characteristics 0 1 2 3 IF - Forward Current (A) VF - Forward Voltage (V) 150°C 100 150 200 250 300 0 400 800 1200 1600 IR - Reverse Current (uA) VR - Reverse Voltage (V) 25°C 150°C 25°C 25 50 75 100 125 150 175 IF(AV) - Forward Current (A) TC - Temperature (°C) 100 120 25 50 75 100 125 150 175 PT - Power (W) TC - Temperature (°C) 0 200 400 600 800 1000 1200 CJ - Junction Capacitance (pF) VR - Reverse Voltage (V) 0 200 400 600 800 1000 1200 QJ - Charge (nC) VR - Reverse Voltage (V) © Preliminary 3 Publication Order Number: DS_ADE4D20120D_1A
  1. Capacitance Stored Energy vs. Reverse Voltage 8. Reverse Recovery Time vs. dIF/dt 9. Thermal Transient Junction to Ambient Typical Electrical Characteristics 1E-04 1E-03 1E-02 1E-01 1E+00 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse RθJC(t) = r(t) + RθJC TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 P(pk) RθJC = 1.45 °C /W 0 200 400 600 800 1000 1200 E - Energy (uJ) VR - Reverse Voltage (V) 100 100 200 300 400 500 TRR - Reverse Recovery Time (ns) dIF/dt (A/us) TJ=150°C © Preliminary 4 Publication Order Number: DS_ADE4D20120D_1A

Package Information

© Preliminary 5 Publication Order Number: DS_ADE4D20120D_1A