ADB3115 ADV | Alldatasheet

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1 / 5 www.advsemi.com Feb,2015 -Rev.3.01 ADV P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Features:

  • Low Gate Charge for Fast Switching Application
  • Low R DS(ON) to Minimize Conductive Loss
  • 100% EAS Guaranteed
  • Optimized V (BR)DSS Ruggedness
  • Green Device Available Description: These P-Channel enhancement mode power fiel d effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to150 °C EAS Single Pulse Avalanche Energy (3) 125 mJ IS Diode Continuous Forward Current T C =25°C -50 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested （2） TC=25°C, VGS=-10V -200 A ID Continuous Drain Current （1） TC=25°C, VGS=-10V -50 A TC=100°C VGS=-10V -32 A PD Maximum Power Dissipation T C=25°C 38 W Thermal Characteristics Symbol Parameter Ratings Unit RthJC Thermal resistance junction-case max （1） 2.3 °C/W RthJA Thermal resistance junction-ambient max （1） 65 °C/W VDSS I D RDS(ON) (mΩ) -30V -50A 8.7mΩ PDFN（5X6） G D S

2 / 5 www.advsemi.com Feb,2015 -Rev.3.01 ADV Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA -30 -- -- V IDSS Zero Gate Voltage Drain Current VDS= -30V, VGS=0V TJ=25°C -- -- -1 uA VDS=-24V,VGS=0V TJ=55°C -- -- -5 VGS(th) Gate Threshold Voltage V DS=VGS, IDS=-250uA -1.2 -1.6 -2.5 V IGSS Gate Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA RDS(ON) Drain-SourceOn-stateResistance⑵ VGS= -10V, IDS=-30A -- 7.3 8.7 VGS= -4.5V, IDS=-15A -- 11 13.5 Dynamic Characteristics Ciss Input Capacitance V GS=0V, VDS= -15V, Frequency=1.0MHz -- 3448 -- pF Coss Output Capacitance -- 508 -- Crss Reverse Transfer Capacitance -- 421 -- Switching Characteristics td(ON) Turn-on Delay Time⑴ VDD=-15V, ID= -15A, VGS= -10V, RGEN=3.3Ω -- 9.4 -- ns tr Turn-on Rise Time⑴ -- 10.2 -- td(OFF) Turn-off Delay Time⑴ -- 117 -- tf Turn-off Fall Time⑴ -- 24 -- Qg Total Gate Charge⑴ VDS=-15V, VGS= -4.5V, IDS=-10A -- 30 -- nC Qgs Gate-Source Charge⑴ -- 10 -- Qgd Gate-Drain Charge⑴ -- 10.4 -- Avalanche Characteristics Diode Characteristics VSD Diode Forward Voltage⑵ ISD =-1A, VGS = 0V ,TJ=25°C -- -- -1.0 V NOTES: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A

5 / 5 www.advsemi.com Feb,2015 -Rev.3.01 ADV PACKAGE MECHANICAL DATA PDFN（5X6） Package Dimension Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.800 1.100 0.031 0.043 b 0.330 0.510 0.013 0.020 c 0.200 0.300 0.008 0.012 D1 4.800 5.100 0.189 0.201 D2 3.610 4.100 0.142 0.161 E 5.900 6.200 0.232 0.244 E1 5.700 5.900 0.224 0.232 E2 3.350 3.780 0.132 0.149 H 0.410 0.700 0.016 0.028 K 1.100 1.500 0.043 0.059 e 1.270 TYP. 0.050 TYP. L 0.510 0.710 0.020 0.028 L1 0.060 0.200 0.002 0.008 θ 0 ° 12 ° 0 ° 12 °