ADA-4789 AVAGO | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Features
- Small Signal Gain Amplifier
- Operating Frequency: DC – 2.5 GHz
- Unconditionally Stable
- 50 Ohms Input & Output
- Flat, Broadband Frequency Response up to 1 GHz
- Operating Current: 40 – 80 mA
- Industry Standard SOT-89 Package
- Single Supply
- VSWR < 2 Throughput Operating Frequency Specifications 900MHz, 3.80V, 60mA (Typical)
- 16.50 dB Associated Gain
- 17.10 dBm P1dB
- 32.60 dBm OIP3
- 4.20 dB Noise Figure 900MHz, 4.10V, 80mA (Typical)
- 16.90 dB Associated Gain
- 18.80 dBm P1dB
- 33.20 dBm OIP3
- 4.30 dB Noise Figure
Applications
- Cellular/PCS/WLL Base Stations
- Wireless Data/WLAN
- Fiber-Optic Systems
- ISM
Description
Avago Technologies’ ADA-4789 is an economical, easy- to-use, general purpose silicon bipolar RFIC gain block amplifiers housed in SOT-89 surface mount plastic pack- age. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful oper- ating frequency up to 2.5 GHz. This is an ideal device for small-signal gain cascades or IF amplification. ADA-4789 is fabricated using Avago’s HP25 silicon bi - polar process, which employs a double-diffused single poly-silicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isola- tion technologies and submicron aluminum multi-layer inter-connects to achieve superior performance, high uniformity, and proven reliability. Package Marking and Pin Connections Note: Package marking provides orientation and identification “4G” = Device Code “x” = Month code indicates the month of manufacture 4GX Top View RFin GND RFout #1 #2 #3 Bottom View RFout GND RFin #3 #2 #1
- Typical value determined from a sample size of 500 parts from 3 wafers.
- Measurement obtained using production test board described in the block diagram below.
- i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.
ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone. iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone. Table 2. Electrical Specifications at Tc = +25°C Symbol Parameter and Test Condition:Id = 60mA, Zo = 50W Frequency Units Min. Typ. Max.
900 MHz [1,2]
2.0 GHz
900 MHz [1,2,3]
2.0 GHz [3]
Table 1. Absolute Maximum Ratings [1] at Tc = +25°C
- Operation in excess of any one of these conditions may result in
permanent damage to the device.
- Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5
- Thermal Resistance is measured from junction to board using IR
Table 3. Typical Electrical performance at Tc = +25°C, Id=80mA, Zo= 50 W
- Typical value determined from a sample size of 200 parts from 2 wafers.
- Measurement obtained using production test board described in the block diagram below.
3 i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone. ii) 900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone. iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone. Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max.
50 Ohm
2 & 3. Circuit losses have been de-embedded from actual measurement.
Notes: S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead. Typical Scattering Parameters At 25°C, Id = 50mA Freq. GHz S11 S21 S12 S22
Notes: S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead. Typical Scattering Parameters At 25°C, Id = 60mA Freq. GHz S11 S21 S12 S22
Notes: S parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the RFin lead. The output reference plane is at the end of the RFout lead. Typical Scattering Parameters At 25°C, Id = 80mA Freq. GHz S11 S21 S12 S22
Part Number Ordering Information Dimensions in mm Dimensions in inches Symbols Minimum Nominal Maximum Minimum Nominal Maximum E 3.94 - 4.25 0.155 - 0.167 MATTE FINISH POLISH POLISH D E L b e e1S C b1 b A OR 1.24 1.23 0.77
0.2 HALF ETCHING
1.625 2.35 DEPTH 0.100 E D E L e e1S OR
NOTES: 1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2 2. CAMBER IN COMPLIANCE WITH EIA 481 3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED AS TRUE POSITION OF POCKET, NOT POCKET HOLE 12.0 ± .3 Ao = 4.60 Bo = 4.90 Ko = 1.90 5.50 ± .05 SEE NOTE 3 1.75 ± .10 8.00 Ø 1.5 +0.1/-0.0 2.00 ± .05 SEE NOTE 3
4.00 SEE NOTE 1
Ø 1.50 MIN. Ao Ko R 0.3 TYP . R 0.3 MAX. 0.30 ± .05 A A Bo USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL 4GX 4GX 4GX 4GX
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0295EN AV02-0052EN - May 23, 2013 Ø 20.2 M IN 2.0 ± 0.5 Ø 13.0 +0.5 -0.2 102.0 REF 330.0 REF 8.4(MEASURED AT HUB) (MEASURED AT HUB) "A" ATTENTION Electrostatic Sensitive Devices Safe Handling Required MINNEAPOLIS USA U.S PAT 4726534 R LOKREEL R 11.1 MAX. Detail "A" Detail "B" PS PS 1.5
88 REF
96.5 +0.3 - 0.2 Dimensions in mm Reel Dimensions – 13” Reel