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Document overview

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Technical content

Features

  • Small Signal gain amplifier
  • Operating frequency DC – 2.5 GHz
  • Unconditionally stable
  • 50 Ohms input & output
  • Flat, Broadband Frequency Response up to 1 GHz
  • Operating Current: 10 to 30 mA
  • Industry standard SOT-343 package
  • Lead-free option available Specifications 900 MHz, 3.4V, 15 mA (typ.)
  • 15.1 dB associated gain
  • 1.9 dBm P 1dB
  • 15 dBm OIP 3
  • 3.7 dB noise figure
  • VSWR < 2 throughput operating frequency
  • Single supply, typical I d = 15 mA

Applications

  • Cellular/PCS/WLL base stations
  • Wireless data/WLAN
  • Fiber-optic systems
  • ISM Surface Mount Package SOT-343 Pin Connections and Package Marking RFin 1TxGND RFout & Vd GND Note: T op View. Package marking provides orientation and identification. “1T” = Device Code “x” = Date code character identifies month of manufacture.

Description

Avago Technologies’ ADA-4543 is an economical, easy-to- use, general purpose silicon bipolar RFIC gain block am- plifi ers housed in a 4-lead SC-70 (SOT-343) surface mount plastic package which requires only half the board space of a SOT-143 package. The Darlington feedback structure provides inherent broad bandwidth performance, resulting in useful oper- ating frequency up to 2.5 GHz. This is an ideal device for small-signal gain cascades or IF amplifi cation. ADA-4543 is fabricated using Avago’s HP25 silicon bi- polar process, which employs a double-diff used single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer inter- connect to achieve superior performance, high uniformi- ty, and proven reliability. Cblock Cblock CbypassRc VCC = 5 V Vd = 3.4 V RFC RF input RF output 1Tx Rc = Vcc - Vd Id T ypical Biasing Configuration Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.

Symbol Parameter Units Maximum Id Device Current mA 40 Pdiss T otal Power Dissipation[2] mW 145 Pin max. RF Input Power dBm 13 Tj Channel T emperature °C 150 TSTG Storage T emperature °C -65 to 150 θjc Thermal Resistance [3] °C/W 152 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 25 °C. Derate 6.6 mW/°C for TL >128°C. 3. Junction-to-case thermal resistance measured using 150°C Liquid Crystal Measurement method. TA = 25°C, Zo=50Ω, Pin = -25 dBm, Id = 15 mA (unless specified otherwise) Id = 15 mA, Zo = 50Ω Vd Device Voltage Id = 15 mA V 3.1 3.4 3.8 Gp Power Gain (|S 21|2 100 MHz dB 15.7 900 MHz[1,2] 13.5 15.1 16.5 ΔGp Gain Flatness 100 to 900 MHz dB 0.4 0.1 to 2 GHz 1.5 F3dB 3 dB Bandwidth GHz 3.6 VSWRin Input Voltage Standing Wave Ratio 0.1 to 6 GHz 1.7:1 VSWRout Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.3:1 NF 50 Ω Noise Figure 100 MHz dB 3.6 0.16 900 MHz[1,2] 3.7 0.18 P1dB Output Power at 1dB Gain Compression 100 MHz dBm 2.5 900 MHz[1,2] 1.9 OIP3 Output 3rd Order Intercept Point 100 MHz [3] dBm 14.6 DV/dT Device Voltage T emperature Coefficient mV/ °C -5.6 Notes: 1. T ypical value determined from a sample size of 500 parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. 3. I) 900 MHz OIP 3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone. II) 100 MHz OIP3 test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone. Block diagram of 900 MHz production test board used for V d, Gain, P1dB, OIP3, and NF measurements. Circuit losses have been de-embedded from actual measurements. Input 50 Ohm Transmission (0.5 dB loss) DUT

50 Ohm

(0.5 dB loss) Output

ADA-4543 Typical Scattering Parameters, TA = 25°C, Id = 12 mA Freq. S 11 S21 S12 S22 K Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

ADA-4543 Typical Scattering Parameters, TA = 25°C, Id = 15 mA Freq. S 11 S21 S12 S22 K Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

ADA-4543 Typical Scattering Parameters, TA = 25°C, Id = 20 mA Freq. S 11 S21 S12 S22 K Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

ADA-4543 Typical Scattering Parameters, TA = 25°C, Id = 30 mA Freq. S 11 S21 S12 S22 K Notes: 1. S-parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the input lead. The output reference plane is at the end of the output lead.

Ordering Information

Part Number No. of Devices Container ADA-4543-TR1 3000 7” Reel ADA-4543-TR2 10000 13” Reel ADA-4543-BLK 100 antistatic bag ADA-4543-TR1G 3000 7” Reel ADA-4543-TR2G 10000 13” Reel ADA-4543-BLKG 100 antistatic bag Note: For lead-free option, the part number will have the character “G” at the end. Package Dimensions Outline 43 SOT-343 (SC70 4-lead) Recommended PCB Pad Layout for Avago’ s SC70 4L/SOT-343 Products HE D A1b E 1.30 (.051) BSC 1.15 (.045) BSC CL A DIMENSIONS (mm) MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 SYMBOL E D HE A b c L NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. 1.30 (0.051) 0.60 (0.024) 0.9 (0.035) Dimensions in mm (inches) 1.15 (0.045) 2.00 (0.079) 1.00 (0.039)

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3752EN AV02-3595EN - June 8, 2012 Device Orientation Tape Dimensions For Outline 4T USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW 1Tx 1Tx1Tx1Tx P Po P2 F W C D E Ao 10 MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 10 MAX. Bo Ko DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER Ao Bo Ko P 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D Po E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 COVER TAPE