AD149 NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 AD 149, AD 150 PNP Transistors for AF power stages up to 20 W AD 149 and AD 150 are germanium PNP alloyed transistors in a TO-3 package. The collector is electrically connected to the case. For insulated mounting of these transistors on a chassis, the insulating parts Q 62901-B 11-A and Q 62901-B 13-B are provided. These parts have to be ordered separately. AD 149 and 150 are recommended for use in high-quality AF power stages. For use in push-pull power stages, these transistors are also available in pairs. Weight approx. 16.5 g Dimensions in mm Maximum ratings Collector-base voltage Collector-emitter voltage Collector-emitter voltage (I/BE = 2V) Emitter-base voltage Collector current Base current Junction temperature Storage temperature Total power dissipation; see diagram Ptot = F (rcase) Thermal resistance Junction to case Static characteristics (TMtt = 25 °C) The transistors AD 149, AD 150 are classified in groups of static forward current transfer ratio B (- 7C ™ 1 A), which are indicated by Roman numerals. The following values apply at a collector-emitter voltage l/CE = 1 V and the following collector currents: •» -i -vCBO -Vceo -^cev -l/EBO -fc -/B Ti rs "tot "th J case AD 149 3.5 600 100 -55...+100 25,5 AD 150 3.5 600 100 -55...+100 25,5 V V V V A mA W
- c/w B-groups type A 0.05 IV AD 149/1 50 B IC/IB 45 (30. ..60) V AD 149/1 50 B fc/fu 75(50...100) AD 149/1 50 -l/BE V 0.2 (< 0.35} 0.46 (< 0.7) 0.75 (< 1.1) AD 149/1 50 -I'cEsat1) V 0.3 (< 0.6) AD 149/1 50 -^cEsat2) V 0.4 (< 0.7) 1) Tho transistor is overdriven to such an exert that the static forward curent transfer ratio has decrea- sed to B = 10 (-/c = 3A: B = 10) 2) (/c ~ 3A applies for the characteristicscurve which, at constant base current, passes the point /c = 3.3 A. VCf = 1V). Quality Semi-Conductors
AD1DO-AD1M ADW7-AD111 AD114-AD118 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Parameter SUBGROUP 1 Visual & Mechanical SUBGROUP 2 (25'C TESTS) Off-State Current Reverse Current Reverse Gate Current Gate Trigger Current AD100-104 AD107-111 AD114-118 Gate Trigger Voltage On State Voltage Holding Current SUBGROUP 3 (25'C TESTS) On-State Voltage-Critical Rate of Rise Gate Trigger-on Pulse Width Delay Time Rise Time Circuit Commutated Turn-off Time SUBGROUP 4 (125-C TESTS) Off-State Current Reverse Current Gate Trigger Voltage Holding Current Symbol 'DRM 'KRM u IGT VST VT dv/dt Won) td tr 'DRM 'RAM V,T IH Mln. 0.44 0.3 0.15 0.2 Typical .01 .01 0.1 0.2 2.0 0.52 1.1 0.5 100 0.5 0.6 0.4 0.2 0.4 Max. 0.1 0.1 0.2 2.0 200 0,60 1.5 2.0 2.0 100 100 1.5 units M xA fA V V mA Vlns /•* /iA V mA Test Conditions RSK = IK. VDRM = Rating "&k = IK. VRRM = Rating V&R = 2V RSS=10K,V0 = SV RG! = lOOn, VD = 5V lr = 1.0 Amp (pulse) RSK = IK RSK = 1K,VD = 30V IG = 10mA, IT = IA, VD = 30V ls = 10mA, 1, = 1A, VD = 30V lr = 10mA, I, = 1A, V0 = 30V I7 = IA, 1, - 1A, RSK = IK R£K = IK, VDRM = Rating R5K — IK, VRfik4 = Rating Rss = lOOfl. VD - 5V RGK = IK Not*: 6 lock Ing voltage ratings apply ov«r the full operating t»mp*ratur* rang*, provided the gate is connocted to th* cathode through a re- sistor, 1000 ohms or smaller, or other adequate bias is used. — 60 Gate Trigger Current A DIM Serial 4-i JALL UNITS FIRE -t~ NU UNITS FIRE -w i j ; 1 i i i 1 —$5 —25 Q 25 50 75 130 125 1M T —JUNCTION TEMPERATURE (PC) Gate Trigger Currant ADHTSiriBS NO UNITS FIRE -*5 —25 0 25 50 75 100 125 150 T — JUNCTION TEMPERATURE I'C) Gate TrigBBr Current A0114 Seri«s 25 0 2S 50 7S 100 12S 150 Tj — JUNCTION TEMPERATURE fC> GateTriuer Voltage —6S —25 0 3S 50 78 100 139 IK JUNCTION TEMPERATURE (°C>