ACY23 SIEMENS | Alldatasheet

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25C D MM 8235605 OOO4O4L 4 MMSIEG . oe : | PNP Transistors for AF Input Stages ACY 23 : 25c 04041 0 ACY32 | SIEMENS AKTIENGESELLSCHAF { ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1A 3 DIN 41871 case { (similar to TO-1). Alll leads are electrically insulated from the case. The collector terminal | is marked by a red dot on the rim of the case. The transistors are particularly intended : for use in AF input stages. | \\ TG -/ i Type Ordering code Heat sink i ACY 23V Q60103-Y23-E tt : g| Acy 23 V1 Q60103-Y23-F } g| acy 32V 060103-Y32-E na { 8] acy32vi 060103-Y32-F 0 ' | Heat sink 062901-B1 Ey i 5 | g 4 ! 2 . ag cop ‘Thermal resistance between transistor case and ! _ 3 heat sink below the fixing screw at careful mount- : SS Es ing: Rth S10 KW . Low, ag) t | ‘Approx. weight 1g Dimensions in mm i Maximum ratings ACY 23, ACY 32 i Collector-emitter voltage —Veeo 30 Vv i Collector-emitter voltage (Vge20.2 V) -Veev 32 v | Collector-base voltage -Vcao 32 v ; Emitter-base voltage -Veao 16 v . Collector current -Ic 200 mA : Base current -lg 40 mA i Junction temperature y 90 °C | Storage temperature range Te -85 to +75 °C : Total power dissipation (Tease = 45°C) Prot 900 mw i i Thermal resistance * i Junction to ambient air Rina $300 = Kw H Junction to case Rie 550 Kw 1 cs Ae oo. 87

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25C D mm 6235605 GOO4O42 & MMSIEG an SIEM Hap 21042. 2 acy23. SIEMENS AKTIENGESELLSCHAF ~~ ~~~ - ACY 32 i Te 27-11 i Static characteristics (Temp = 25°C) ACY 23, ACY 32 i Tmo [26 [60 fe ! Collector cutoff current (~Voao = 10 V) -Icgo | 3(<10) | 60(<100) | yA i Collector cutoff current (-Vcgo = 32 V) -Icao 5 (<18) <150 | pA i : Collector cutoff current i (-Veey = 32 V; Vge20.2 V) —Tcev 5 (<18)* <150 | nA Emitter cutoff current (—Vego = 16 V) -keeo | 4(<18)* <120 | pA Static characteristics (Tamp = 25°C) ACY 23, ACY 32 , Vee ale lp hee Vee : mA HA Id/lp | V 05 2 30 67 0.13 (<0.2) 05 10 137 73 0.18 (<0.3) : 0.6 100 1560 | 64 0.32 (<0.65) Collector-emitter saturation voltage —Veesat | 0.11 (<0.18) | Vv : Uc = 100 mA; Ig = § mA) Collector-emitter saturation voltage : (Ic = 200 mA for the characteristic which, at constant base current, intersects the operating point, where Ig = 220 mA and —Vce = 0.5 V) —Veesat | 0.25 (<0.4) v Dynamic characteristics (Tamp = 25°C) The transistors ACY 23 and ACY 32 are grouped according to the small-signal current gain hy, and marked by Roman numerals, Operating point: —/c= 1mA; —Vee= 5 V; f= 1kHz : hye group Vv vi hte 50 to 100 76 to 150° - ACY 23 ACY 32 Operating point: t =I =1mA; -Veg =5V Transition frequency fr 1.5 (>0.5) 1.5 (>0.5) MHz Base intrinsic resistance Tob' 75 (<200) 75 (<200) Q Collector-junction capacitance Cy_ | 27 27 pF Noise figure (lc = 0.5 mA; : Vee = 6 V; f = 1 kHz; Operating point: Ic =1mA; ite 3(1.2 to) 3(1.2to 5) ka : Vee = 8 VV; f= 1 kHz Ne 7 (<16) 7 (<15) 10-4 Me = hate 100 (60 to 150) | 100(60to150) | - haze 40 (<75) 40(<76) uS *AQL = 0.85% : 88 - . ~

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1 25¢ D MM 8235L05 GOOVO4S 8 MMSIEG | CO " STEMENS AKTIENGESELLSCHAF 27043 ACY 23 : Te2G-H ne ee 23, ACY 32 a (Ow poomkeY 23, ACY 32 : o Sestimerte a tiaSeiiamsi i ENSEKREEEE te CCTIECHIET Terri :

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IN Eqsh reat é os 7/20 ‘ uh \\ 6 Flo eH : BRERSSEKUE “Baie —_ LETTE PSN oo AT lo: 0 o 100°C wi wt 18 abe nt Hs { Wats sdoriumasontebon ' \\ {common emitter configuration) {common emitter configuration) H te ae SL wi AA ej EAS AAPA; vA wee) BEEEEEEH BoE ew LTT we LTT TTT o 02 04 06 Oey 0 a2 Os 08 OBV . 89 1519 0-02 .

1 25¢ D M™ 4235605 OOOUO44 T MMSIEG. ,- an cre wert i ACY 23 SIEMENS AKTIENGESELLSCHAF ACY 32 ; — _ i DC current gain hre = f {/c) BC current gain hye = f i/o) 4 “Veg = 0.5 V; Teme = parametér “Veg = 0.5 V; Temp = parameter i (commen emitter configuration) . {commen emitter configuration) ; ACY 23V, ACY 32V ACY 23 VI, ACY 32VI . TSS ? SSS : Nee EAI CEH Ogg ee ; { re { Geshe Matisse ll ve NST eae aa Ss EPH CHT EHH H Cae | Poet FItH CTH al a a 4 HHH zl UT FH ate irc UT gf LOT TT : v 5 0 5 10 5 Om we 5 5 66 Om . —t — ly Output characteristics Output cheracteristics : - Ie=1 (Vee); Ig = parameter Ig =t(Vce); tg = parameter (commen emitter configuration) (common emitter configuration) ma ACY 23, ACY 32 mA ACY 23, ACY 32

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