ACT5101-1

ACT5101-1 AEROFLEX | Alldatasheet

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 500 VDC RATING  40 AMP CONTINUOUS CURRENT (UP TO 85 °°°°C)  PACKAGE SIZE 3.0" X 2.1" X 0.39"  4 QUADRANT CONTROL  6 STEP TRAPEZOIDAL DRIVE CAPABILITY  MILITARY PROCESSING AVAILABLE  MIL-PRF-38534 COMPLIANT CIRCUITS AVAILABLE  ISOLATED UPPER AND LOWER GATE DRIVERS  FULL MILITARY (-55°C TO +125°C) TEMPERATURE RANGE General Description The ACT5101-1 high voltage 3 phase brushless DC motor drive combines a 500 VDC, 40A high power output stage along with low power digital input and gate drive stages. A digital lock-out feature protects the output stage from accidental cross-conduction thus preventing shoot-through conditions. The ACT5101-1 also includes a floating gate drive design for each upper and lower transistor. On-board gate drive supplies provide a continuous floating voltage for each upper and lower transistor, even during a motor stall. The high power output stage rated at 500 VDC, 40A is capable of delivering over 20 kW to the load even after derating. This is accomplished through the use of high power IGBTS with ultra-fast recovery rectifiers in parallel. The ACT5101-1 utilizes power hybrid technology to provide the highest levels of reliability and lightest weight while requiring the smallest amount of board space. The ACT5101-1 is available with military processing and operates over the full -55 to +125 degrees C temperature range. This makes the ACT5101-1 ideal for all military, space,and commercial avionics' applications. These incl- ude electro-hydrostatic actuators [EHA's] and electro-mechanical actuators [EMA's] for flight surface control, missile fin actuators, thrust vector control, electric brakes, fuel and cooling pumps. FIGURE 1 – BLOCK DIAGRAM Phase V+ Phase OUT Phase RTN +15V SD Ux Lx +15V+15V +15V +15V DC / AC Converter XFMR Rect XFMR Rect Optical Isolation To Other Sections BRUSHLESS DC MOTOR DRIVE ACT5101-1 HIGH VOLTAGE 3-PHASE

2Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 Additional applications include environmental conditioning blowers, radar positioning, solar panel positioning, and cryogenic cooler pumps. The ACT5101-1 is therefore especially suitable for use in applications for all military tank upgrades, helicopters, planes and new commercial avionics using 270 VDC as the main power. 50% 50% 90% 50% 10% tr tf tr tf td off td offtd ontd on Ux INPUTS LX INPUTS PHASE OUTPUTS H Z Z L PHASE OUTPUTS tSDU tSDL UPPER TRANSISTOR BEING SHUTDOWN LOWER TRANSISTOR BEING SHUTDOWN FIGURE 2 – TIMING DIAGRAM SD 50%

3Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 Table I – Absolute Maximums (TC = +25°C unless otherwise specified) PARAMETER SYMBOL RANGE UNITS SUPPLY VOLTAGE (PINS 3,7,11) V+A,V+B,V+C 500 V DC +15 V SUPPLY (PIN 12) +15V 18 V DC OUTPUT CURRENT CONTINUOUS lo 40 A PULSED l op 60 A CASE OPERATING TEMPERATURE T C -55 to +125 °C CASE STORAGE TEMPERATURE RANGE T CS -55 to 150 °C JUNCTION TEMPERATURE T J 150 °C Table II – Normal Operating Conditions (TC = +25°C unless otherwise specified) PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT POWER OUTPUT STAGE Output Current Continuous l o 40 A Supply Voltage V+A,V+B,V+C 15 270 500 V DC Output Voltage Drop (each IGBT) V CE(SAT) lo = 40A 3.4 V DC Instantaneous Forward Voltage (flyback diode) VF lop = 40A (See Note 1)

2.4 V DC

Reverse Recovery Time (flyback diode) t rr 35 nsec Reverse Leakage Current at Tc=25° Cl r See Note 2 0.25 mA Reverse Leakage Current at Tc=125° Cl r 8m A LOGIC INPUT SIGNALS (INTERNALLY PULLED UP) (V+ = 15V) Input Voltage Low V INL 4V D C Input Voltage High V INH 6.8 V DC Input Current Low I INH 3.75 mA

4Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 SWITCHING CHARACTERISTICS Upper Drive: Turn-on propagation delay t d (on) 700 nsec Turn-off propagation delay t d (off) 2 µsec Shut-down propagation delay t SDU 3.5 µsec Turn-on Transition Time t r 100 nsec Turn-off Transition Time t f 250 nsec Lower Drive: Turn-on propagation delay t d (on) 600 nsec Turn-off propagation delay t d (off) 2 µsec Shut-down propagation delay t SDL 3.5 µsec Turn-on Transition Time t r 250 nsec Turn-off Transition Time t f 200 nsec SWITCHING ENERGY LOSSES (At I = 40A, V = 480V) Turn-on Energy Eon Tc = +125°C4 m J Turn-off Energy Eoff 6m J DEAD TIME t dt 500 nsec THERMAL Junction-Case Thermal Resistance (IGBT) θjcIGBT each transistor .45 °C/W Junction-Case Thermal Resistance (DIODE) θjcDIODE each diode .85 °C/W Maximum Lead Soldering Temp T S See Note 3 250 °C Junction Temperature Range T J -55 150 °C Case Operating Temperature T C -55 125 °C Case Storage Temperature T cs -55 150 °C NOTES: 1. Pulse width ≤ 300 usec duty cycle ≤2% 2. V+ = 480 V , Inputs = logic "1" 3. Solder 1/8" from case for 5 seconds maximum Table II – Normal Operating Conditions (Continued) (TC = +25°C unless otherwise specified) PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

5Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 FUNCTION PIN # DESCRIPTION V+ A 11 High Voltage D.C. Bus, Phase A V+ B 7 High Voltage D.C. Bus, Phase B V+ C 3 High Voltage D.C. Bus, Phase C +15V 12 +15 VDC input required to power gate drive supply and gate drive circuitry of all three phases. GND 19,22,26 Reference for LOGIC supply, +15V supply, and digital inputs. RTN A 8 Return for High Voltage Bus, Phase A. RTN B 5 Return for High Voltage Bus, Phase B RTN C 1 Return for High Voltage Bus, Phase C PHASE A 9 Output to motor winding Phase A PHASE B 6 Output to motor winding Phase B PHASE C 2 Output to motor winding Phase C UA 18 Digital input to Phase A upper transistor LA 17 Digital input to Phase A lower transistor UB 21 Digital input to Phase B upper transistor LB 20 Digital input to Phase B lower transistor UC 25 Digital input to Phase C upper transistor LC 24 Digital input to Phase C lower transistor SD 23 Digital shut-down input to enable / disable all six gate drives N/C 4,10,13-16 No connection Internally DIGITAL INPUT STAGE The ACT5101-1 offers complete flexibility by allowing the user to turn on/off each of the 6 IGBTS in any order or combination desired which enables the hybrid to be commutated in a 6 step trapezoidal mode. The only unacceptable combination would be to turn on an upper and lower transistor of the same phase. This is not a desirable condition for normal operation and is therefore not allowed. The ACT5101-1 has a digital lockout feature that prevents turn-on of two in-line transistors. Damage to one or both of the transistors would occur if this protection circuitry was not present in the hybrid. As a safety precaution, it is still recommended that a 500 nsec dead time be installed between commands at the inputs of the upper and lower transistors of the same phase. This will compensate for any lag in transistor turn-off due to the inductive load. The SD input allows the user to enable/disable the drive stage of the ACT5101-1 on demand. This input can be incorporated into the user's temperature or current monitoring circuitry to shutdown the hybrid if excessive current or case temperatures are sensed. The digital input circuits are of the Schmitt trigger type with hystersesis of at least 1.6 volts, thus greatly enhancing the input noise immunity. The inputs are internally pulled up to 15 volts so that an uncommitted input is sensed as "OFF", providing a measure of protection against an accidental input disconnect. GATE DRIVE The ACT5101-1 includes a gate drive supply which provides a floating voltage for each upper and lower transistor. This constant voltage allows the motor to be operated at very low duty cycles or driven into a stall without any loss of upper or lower gate drive. This performance could not be obtained with only a conventional boot strap design.

6Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 POWER OUTPUT STAGE I G B T S [ i n s u l a t e d g a t e b i p o l a r t r a n s i s t o r s ] a r e t e c h n i c a l l y s i m i l a r t o b i p o l a r s a n d M O S F E T S . A n I G B T i s a composite of a transistor with an N-channel MOSFET connected to the base of a PNP transistor. Like the MOSFET, it offers high input impedance and requires low input drive current. IGBT conduction losses are low, as with bipolar technology, and IGBT voltage drops are much lower compared with those of MOSFETs. Consequently, the IGBT offers a high current density. With a smaller die size than the MOSFET, it can handle the same current rating. Unlike MOSFETS, IGBTS have no intrinsic body diode. The ACT5101-1 includes 35 nsec fast recovery rectifiers in parallel across each of the 6 IGBTS to carry the reverse current when the IGBT is turned off. It is important for the user to observe the Absolute Maximum ratings of the ACT5101-1 so that the voltage and current rating is not exceeded. If over-voltage/over-current protection is desired it must be implemented external to the ACT5101-1. Figure 3 shows the ACT5101-1 output current capability vs. case temperature. FIGURE 3 - OUTPUT CURRENT VS. CASE TEMPERATURE POWER DISSIPATION Power dissipation in the ACT5101-1 is composed of three elements: IGBT conduction losses, IGBT switching losses, and commutation diode conduction losses. It is important that the user calculates power dissipations over the full range of operating conditions of the hybrid, and uses these dissipations to compute the worst case junction temperatures both for the IGBTs and diodes. The 150 ° C maximum junction temperature shown in Table 2 must not be exceeded. Additionally, program specific derating and reliability constraints may require lower junction temperatures than the 150 ° C maximum. Calculating IGBT conduction losses requires the user to determine load profiles for the hybrid both in current and time duration. IGBT collector-emitter voltage drops are shown in Figure 4. 0 20 40 60 80 100 120 140 Case Temperature TC (°C) Output Current IO (A)

7Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 FIGURE 4 - IGBT COLLECTOR-TO-EMITTER VOLTAGE VS. COLLECTOR CURRENT Based upon this voltage drop and the conduction duty cycle a conduction power loss may be calculated as: where: pc = Conduction IGBT Power Dissipation δs = Switch Duty Cycle, (.33 for brushless drives in run condition, 1 in stall) δPWM = PWM on/off ratio VCE = Collector Emitter voltage from Figure 4 for a particular collector current IC = Collector current Switching losses are dependent upon the operating frequency, collector current and again duty cycle as: where: Ps = Switching IGBT Power Dissipation Eon = Turn on energy loss from Table 2 Eoff = Turn off energy loss from Table 2 fo = Pulse width modulation frequency IC = Collector current Commutation diode losses are calculated as: 8070605040302010 1.6 1.4 1.2 1.0 2.4 2.2 2.0 1.8 2.8 2.6 IC (A) VCE (V) TJ =1 5 0°C TJ =25 °C Pc δS δPWM VCE IC⋅⋅ ⋅= Ps δS Eon Eoff+[] fo IC Pd δs 1 δPWM–[] Vf If⋅⋅ ⋅=

8Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 where: Pd = Commutation diode losses Vf = Commutation diode forward voltage from Figure 5 If = Commutation diode current FIGURE 5 - DIODE VOLTAGE DROP VS. FORWARD CURRENT Once the dissipations are calculated the junction temperatures may then be computed by summing the conduction losses and switching losses for the IGBT and the commutation diode loss and multiplying these dissipations by the respective junction to case thermal resistance as shown below: where: T jIGBT = I G B T J u n c t i o n T e m p e r a t u r e TjDIODE = Commutation Diode Junction Temperature θjcIGBT = IGBT Thermal resistance from Table 2 θjcDIODE = Diode Thermal resistance from Table 2 Tcase =C a s e t e m p e r a t u r e It is important that the user calculate junction temperatures over the full range of operating conditions, including maximum load and stall conditions. Typically, hybrid losses peak at just maximum load with duty cycles approaching, but just under, unity. Single transistor and diode losses peak under stall conditions since power is dissipated in just one channel. EXAMPLE As a typical application consider a 10 HP brushless DC motor operating off a 270V line in a pump application. The drive is trapezoidal, and the nominal load current will be 30 A. The system current limit is set to roll back the PWM to maintain a maximum load current of 25 amperes in the event of a stall. Maximum case temperature will be 85 C. Duty cycles may approach unity, but at stall it will be approximately 0.1. PWM frequency is 20 kHz. If (A) Vf (V) TJ =2 5°C TJ =1 5 0°C 8070605040302010 1.2 1.0 0.8 0.6 1.8 1.6 1.4 TjIGBT Pc Ps+[] θ jcIGBT TC+⋅= TjDIODE Pd θjcDIODE TC+⋅=

9Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 At a run condition each transistor will be on for 120 degrees; then Maximum hybrid dissipation is: δS 0.33= δPWM 1= VCE 1.6 V= IC 30 A= Pc δS δPWM VCE IC⋅⋅ ⋅= Pc 0.33 1.6 30⋅⋅= Pc 15.8 W= Ps δS Eon Eoff+[] fo IC Eon 0.004 J= Eoff 0.006 J= fo 20000 Hz= Ps 0.33 0.004 0.006+[] 20000 30 Ps 49.5 W= TjIGBT Pc Ps+[] θ jcIGBT TC+⋅= TjIGBT 114.4° C= θjcIGBT 0.45°C/W= TC 85° C= PHYBRID 6 Ps Pc+[]= PHYBRID 6 49.5 15.8+[]= PHYBRID 391.8 W=

10Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 At stall only two elements will be on, and they will be on full time. δS 1= δPWM 0.1= VCE 1.6 V= IC 25 A= Pc δS δPWM VCE IC⋅⋅ ⋅= Pc 4.0 W= Ps δS Eon Eoff+[] fo IC Eon 0.004 J= Eoff 0.006 J= fo 20000 Hz= Ps 1 0.004 0.006+[] 20000 25 Ps 125 W= Pd δs 1 δPWM–[] Vf If⋅⋅ ⋅= IF 25 A= Vf 1.3 V= Pd 29.25 W= TjIGBT Pc Ps+[] θ jcIGBT TC+⋅= TjIGBT 143° C= θjcIGBT 0.45°C/W= TC 85° C=

11Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 MECHANICAL The ACT5101-1 construction utilizes only the highest quality materials and manufacturing available to ensure a high reliability , robust power hybrid design. The case is selected for best thermal conductivity, hermeticity, and voltage/current carrying capability. The case is electrically isolated from the circuit and can withstand 1500 VAC from pin to case, and input pins to output pins, therefore no insulating pads or washers are required for mounting. In order to remove the heat being generated from the ACT5101-1, it must be bolted down to the motor, a heat sink or the actual system chassis such as a missile structure or aircraft wing rib for example. Thermally conductive grease or a "Sil-pad" is recommended between the hybrid case baseplate and its mounting surface to fill in any surface imperfections and improve the heat transfer from case-to-heat sink. It is important to keep the temperature at this interface no greater than +125 degrees C in order to maintain safe semi-conductor junction temperatures. The leads of the ACT5101-1 can be formed upward, away from the baseplate, so that a PC board can be mounted directly above it. A wiring harness can also be hand-wired and soldered directly to the leads of the ACT5101-1 if this is preferred. TjDIODE Pd[] θ jc DIODE TC+⋅= TjDIODE 29.25 0.85 ° 85°+⋅= TjDIODE 109.9° C= θjc DIODE 0.85°C/W= TC 85° C= PHYBRID 2 Ps Pc Pd++[]= PHYBRID 2 125 4 29.25++[]= PHYBRID 316.5 W= Maximum hybrid dissipation will be:

12Aeroflex Circuit Technology SCD5101-1 REV D 5/14/01 Plainview NY (516) 694-6700 PIN FUNCTION PIN FUNCTION 1R T N C 2 6 G N D

2 PHASE C 25 UC

6 PHASE B 21 UB

9 PHASE A 18 UA

10 N/C 17 LA

11 V + A 16 N/C

13 N/C 14 N/C

PHASE A PHASE B PHASE CUA UB UC LA LB LC SD Z L L Z L L L L L H H H H H Z H H Z L Z L H H H H H Z Z L L L L L H Z H H H H L Z L H Z H L Z L H Z H L L L Z L H Z L H Z L H XXXXXX 1 Z Z Z H=high level, L=low level, X=irrelevant, Z=high impedance (off) 2.100 1.600 .250 .120 1.860 3.000 .125 2.750 .300 .057 2.010 .330 4X .128 -.005,+.002 THRU 26X .048 - .052 13 14 .54-.58 The information contained in this data sheet is believed to be accurate; however, Aeroflex Laboratories Incorporated assumes no responsibility for its use, and no license or rights are granted by implication or othewise in connection therewith. Aeroflex Circuit Technology

35 South Service Road

FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553 Telephone: (516) 694-6700 Specifications subject to change without notice CIRCUIT TECHNOLOGY 12X .200 Power Package Outline .050 Notes: 1. Package contains BeO substrate. 2. Dimensions Tolerance: ±.005, unless otherwise noted. ±.020 .165 Chamfer .035-.065 X 45° See note 3 3. Pin Tolerance: non-cumulative .003IN/IN .003IN/IN