ACET4445B ACE | Alldatasheet

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Features

 VDS (V) = 30V  ID = 38A (VGS = 10V)  RDS(ON) =6.2mΩ (V GS = 10V，Typ)  RDS(ON) < 8.9mΩ (V GS = 4.5V，Typ)  Low Qg  100% Delta Vsd T ested  100% Rg T ested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TC=25 O C ID A TC=100 O C 18 Drain Current (Pulse) C IDM 60 Drain Current (Continuous) TA=25 O C IDSM 11 A TA=70 O C 8 Power Dissipation B TC=25 O C PD W TC=100 O C 3.2 Power Dissipation A TA=25 O C PDSM W TA=70 O C 1.3 Operating and Storage T emperature Range TJ,TSTG -55 to 150 O C Thermal Characteristics Parameter Symbol Max Units Maximum Junction-to-Ambient A t≦10s RθJA 25 ℃/W Maximum Junction-to-Ambient A D Steady-State 60 ℃/W Maximum Junction-to-Case Steady-State RθJC 4.2 ℃/W

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 2 Packaging Type DFN5*6-8-EP

Ordering information

PN : DFN5*6-8-EP Pb - free Halogen - free

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 3 Electrical CharacteristicsTA=25 O C unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0V 1 μA Gate Threshold Voltage VGS(TH) VGS=VDS ,IDS=250μA 1 3 V Gate Leakage Current IGSS VGS=±20V , VDS=0V 100 nA Drain-Source On-state Resistance RDS(on) VGS = 10V , ID = 12A 6.2 8.5 mΩ VGS =4.5V , ID = 10A 8.9 13 Forward Transconductance gFS VDS=10V, ID=12A 30 S Diode Forward Voltage VSD ISD=2A , VGS=0V 0.71 1.0 V Maximum Body-Diode Continuous Current IS 2 A Switching T otal Gate Charge Qg VDS=15V, ID=12A VGS=5V 7.5 nC Gate-Source Charge Qgs 1.3 Gate-Drain Charge Qgd 4.5 Turn-On Delay Time Td(on) VDS=15V, VGS=10V RGEN=6Ω, RL=15Ω ns Turn-On Rise Time tf 8 Turn-Off Delay Time td(off) 30 Turn-Off Fall Time tf 5 Dynamic Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 680 pF Output Capacitance Coss 150 Reverse Transfer Capacitance Crss 70 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 4 Typical Performance Characteristics

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 5

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 6 Typical Performance Characteristics

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 7 Packing Information DFN5*6-8L-EP

N-Channel Enhancement Mode Field Effect Transistor VER 1.1 8 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) supp ort or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE T echnology Co., LTD. http://www.ace-ele.com/