ACEDC3904B ACE | Alldatasheet

Document overview

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Technical content

Features

 VDS=30V , ID=50A  RDS(ON) @ VGS=10V, TYP 3.5mΩ  RDS(ON) @ VGS=4.5V , TYP 5mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID A TA=100℃ 35 Drain Current (Pulsed)*B IDM 100 A Power Dissipation TA=25℃ PD 23 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific boa rd design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type PDFN3*3-8L DFN3*3 -8L

N-Channel Enhancement Mode Power MOSFET VER 1. 1 2

Ordering information

Electrical Characteristics

TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 30 V Zero Gate Voltage Drain Current IDSS1 VDS = 40V, VGS = 0V 1 μA Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= 250μA 1.2 1.6 2.5 V Gate Leakage Current IGSS VGS= ±20V , VDS=0V ±100 nA Drain-Source On-state Resistance RDS(on) VGS = 10V , ID= 24A 3.5 4.5 mΩ VGS = 4.5V , ID= 12A 5 6 Forward Trans Conductance gFS VDS= 10V , ID= 10A 28 S Diode Forward Voltage VSD ISD= 1A , VGS= 0V 1 V Diode Forward Current IS 80 A Switching T otal Gate Charge Qg VDS= 15V, ID= 24A, VGS= 4.5V 24 nC Gate-Source Charge Qgs 4.2 nC Gate-Drain Charge Qgd 13 nC Turn-on Delay Time td( on ) VDD=15V,ID= 10A, VGS= 10V,RG= 3.3Ω 12.3 ns Turn-on Rise Time tr 1.5 ns Turn-off Delay Time td( off ) 42.8 ns Turn-off Fall Time tf 13.2 ns Dynamic Input Capacitance Ciss VDS=25V,VGS= 0V, f= 1.0MHz 2200 pF Output Capacitance Coss 280 pF Reverse Transfer Capacitance Crss 177 pF PD: PDFN3*3-8L NN: DFN3*3-8L Pb - free Halogen - free

N-Channel Enhancement Mode Power MOSFET VER 1. 1 3 Typical Performance Characteristics

N-Channel Enhancement Mode Power MOSFET VER 1. 1 4

N-Channel Enhancement Mode Power MOSFET VER 1. 1 5 Packing Information PDFN3*3-8L Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.650 0.850 0.026 0.033 A1 0.152 REF 0.008 REF A2 0-0.05 0-0.002 D 2.900 3.100 0.114 0.122 D1 2.300 2.600 0.091 0.102 E 2.900 3.100 0.114 0.122 E1 3.150 3.450 0.124 0.136 E2 1.535 1.935 0.060 0.078 b 0.200 0.400 0.008 0.018 e 0.550 0.750 0.022 0.030 L 0.300 0.500 0.012 0.020 L1 0.180 0.480 0.007 0.019 L2 0~0.100 0~0.004 L3 0~0.100 0~0.004 H 0.315 0.515 0.012 0.020 θ 9° 13° 9° 13°

N-Channel Enhancement Mode Power MOSFET VER 1. 1 6 Packing Information DFN3*3-8L Symbol Dimensions In Millimeters Dimensions In Inches Min. NOM Max. Min. NOM Max. A1 0.05 0.002 e 0.65BSC 0.026BSC

N-Channel Enhancement Mode Power MOSFET VER 1. 1 7 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE T echnology Co., LTD. http://www.ace-ele.com/