ACE2341 ACE | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V
  • -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V
  • -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • SOT-23-3L package design Application
  • Power Management in Note book
  • Portable Equipment
  • Battery Powered System
  • DC/DC Converter
  • Load Switch
  • DSC
  • LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS ±12 V TA=25℃ -4.0 Continuous Drain Current (TJ=150℃) TA=70℃ ID -2.8 A Pulsed Drain Current I DM -12 A Continuous Source Current (Diode Conduction) I S -1.0 A TA=25℃ 1.25Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 140 ℃/W

Technology P-Channel Enhancement Mode MOSFET VER 1.2 2 Packaging Type SOT-23-3 1 2

Ordering information

+ H Pin Description

1 Gate

2 Source

3 Drain

BM: SOT-23-3 Pb - free

Technology P-Channel Enhancement Mode MOSFET VER 1.2 3

Electrical Characteristics

(TA=25 , ℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS=0V, ID=-250uA -20 Gate Threshold Voltage V GS(th) V DS=VGS, ID=-250uA -0.35 -0.9 V Gate Leakage Current I GSS V DS=0.V, VGS=±12V ±100 nA VDS=-20V, VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-20V, VGS=0V TJ=55℃ -10 uA On-State Drain Current I D(ON) V DS≦-5V, VGS=-4.5V -6 A VGS=-2.5V, ID=-2.8A 0.045 0.055Drain-Source On-Resistance R DS(ON) Ω Forward Transconductance Gfs V DS=-5.0V, ID=-3.3A 3 S Diode Forward Voltage V SD I S=-1.6A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Q g 8 13 Gate-Source Charge Q gs 1.2 Gate-Drain Charge Q gd VDS=-6V, VGS=-4.5V, ID≣-3.3A 2.2 nC Input Capacitance C iss 700 Output Capacitance C oss 160 Reverse Transfer Capacitance C rss VDS=-6V, VGS=0V, f=1MHz 120 pF td(on) 15 25 Turn-On Time tr 35 55 td(off) 60 90 Turn-Off Time tf VDD=-6V, RL=6Ω ID≡-1.0A, VGEN=-4.5V RG=6Ω 40 60 ns

Technology P-Channel Enhancement Mode MOSFET VER 1.2 4 Typical Characteristics O u t p u t C h a r a c t e r i s t i c s T r a n s f e r C h a r a c t e r i s t i c s V DS – Drain to Source Voltage (V) V GS – Gate to Source Voltage (V) O n - R e s i s t a n c e v s . D r a i n C u r r e n t C a p a c i t a n c e I D – D r a i n C u r r e n t ( A ) V DS – Drain to Source Voltage (V)

Technology P-Channel Enhancement Mode MOSFET VER 1.2 5 Typical Characteristics G a t e C h a r g e N o r m a l i z e d O n - R e s i s t a n c e v s . J u n c t i o n T e m p e r a t u r e Og T o t a l G a t e C h a r g e ( n C ) T J – Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD S o u r c e t o D r a i n V o l t a g e ( V ) VGS – Gate to Source Voltage (V)

Technology P-Channel Enhancement Mode MOSFET VER 1.2 6 Typical Characteristics Threshold Voltage Single Pulse Power T J – T e m p e r a t u r e T i m e ( s e c ) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration(sec)

Technology P-Channel Enhancement Mode MOSFET VER 1.2 7 Packing Information SOT-23-3

Technology P-Channel Enhancement Mode MOSFET VER 1.2 8 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/