ACE2303_12 ACE | Alldatasheet
Document overview
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Technical content
Features
-30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ ID -3.0 A TA=70℃ -2.0 Pulsed Drain Current IDM -10 A Continuous Source Current (Diode Conduction) IS -1.25 A Power Dissipation TA=25℃ PD 1.25 W TA=70℃ 0.8 Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W
P-Channel Enhancement Mode MOSFET VER 1. 3 2 Packaging Type SOT-23-3 1 2
Ordering information
Electrical Characteristics
(TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-10uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1.0 -3.0 Gate Leakage Current IGSS VDS=0.V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA VDS=-30V, VGS=0V TJ=55℃ -10 On-State Drain Current ID(ON) VDS≦-5V, VGS=-10V -6 A Forward Transconductance gfs VDS=-10V, ID=-1.7A 2.4 S Diode Forward Voltage VSD IS=-1.25A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-15V, VGS=-10V, ID≡-1.7A 5.8 10 nC Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz 226 pF Output Capacitance Coss 87 SOT-23-3 Description
1 Gate
2 Source
3 Drain
BM: SOT-23-3 Halogen - free Pb - free
P-Channel Enhancement Mode MOSFET VER 1. 3 3 Reverse Transfer Capacitance Crss 19 Turn-On Time td(on) VDD=-15V, RL=15Ω ID≡-1.0A, VGEN=-10V RG=6Ω 9 20 ns tr 9 20 Turn-Off Time td(off) 18 35 tf 6 20 Typical Characteristics Output Characteristics Transfer Characteristics VDS – Drain to Source Voltage (V) VGS – Gate to Source Voltage (V) On-Resistance vs. Drain Current Capacitance ID – Drain Current (A) VDS – Drain to Source Voltage (V)
P-Channel Enhancement Mode MOSFET VER 1. 3 4 Typical Characteristics Gate Charge On-Resistance vs. Junction Temperature Oq Total Gate Charge (nC) TJ – Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD Source to Drain Voltage (V) VGS – Gate to Source Voltage (V)
P-Channel Enhancement Mode MOSFET VER 1. 3 5 Typical Characteristics Threshold Voltage Single Pulse Power TJ – Temperature Time(sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration(sec)
P-Channel Enhancement Mode MOSFET VER 1. 3 6 Packing Information SOT-23-3
P-Channel Enhancement Mode MOSFET VER 1. 3 7 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices o r systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/