ACE2302 ACE | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • 20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V
  • 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability Application
  • Power Management in Note book
  • Portable Equipment
  • Battery Powered System
  • DC/DC Converter
  • Load Switch
  • DSC
  • LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±20 V TA=25℃ 3.2 Continuous Drain Current (TJ=150℃) TA=70℃ ID 2.6 A Pulsed Drain Current I DM 10 A Continuous Source Current (Diode Conduction) I S 1.6 A TA=25℃ 1.25Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature T J 150 O C Storage Temperature Range T STG -55/150 O C Thermal Resistance-Junction to Ambient R θJA 100 O C/W

Technology N-Channel Enhancement Mode MOSFET VER 1.2 2 Packaging Type SOT-23-3 1 2

Ordering information

+ H

Electrical Characteristics

TA=25 , unless otherw℃ ise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS V GS=0V, ID=250 uA 20 Gate Threshold Voltage V GS(th) V D=VGS, ID=250uA 0.45 1.2 V Gate Leakage Current I GSS V DS=0V,VGS=±12V ±100 nA VDS=20V, VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V TJ=55℃ 10 uA VDS≧5V, VGS=4.5V 6 On-State Drain Current I D(ON) VDS≧5V, VGS=2.5V 4 A Forward Transconductance gfs V DS=5V,ID=3.6A 10 S Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

BM : SOT-23-3 Pb - free Halogen - free

Technology N-Channel Enhancement Mode MOSFET VER 1.2 3 Diode Forward Voltage V SD I S=1.6A, VGS=0V 0.85 1.2 V Dynamic Total Gate Charge Q g 5.4 10 Gate-Source Charge Q gs 0.65 Gate-Drain Charge Q gd VDS=10V, VGS=4.5V, ID=3.6A 1.4 nC Input Capacitance Ciss 340 Output Capacitance Coss 115 Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz pF td(on) 12 25 Turn-On Time tr 36 60 td(off) 34 60 Turn-Off Time tf VDD=10V, RL=5.5Ω, ID=3.6A, VGEN=4.5V, RG=6Ω 10 25 nS Typical Performance Characteristics O u t p u t C h a r a c t e r i s t i c s T r a n s f e r C h a r a c t e r i s t i c s V DS-Drain-to-Source Voltage (V) V GS-Gate-to-Source Voltage (V) O n - R e s i s t a n c e v s . D r a i n C u r r e n t C a p a c i t a n c e I D- D r a i n C u r r e n t ( A ) V DS-Drain-to-Source Voltage (V)

Technology N-Channel Enhancement Mode MOSFET VER 1.2 4 G a t e C h a r g e O n - R e s i s t a n c e v s . J u n c t i o n T e m p e r a t u r e Q g- T o t a l G a t e C h a r g e ( n C ) T J-Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) V GS-Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power T J-Temperature(℃) T i m e ( s e c )

Technology N-Channel Enhancement Mode MOSFET VER 1.2 5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec)

Technology N-Channel Enhancement Mode MOSFET VER 1.2 6 Packing Information SOT-23-3

Technology N-Channel Enhancement Mode MOSFET VER 1.2 7 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/