ACE1106M ACE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Features

  • Low rDS(on) trench technology
  • Low thermal impedance
  • Fast switching speed Applications:
  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current a TA=25°C ID 110 A Pulsed Drain Current b IDM 390 Continuous Source Current (Diode Conduction) a IS 110 A Power Dissipation a TA=25°C PD 300 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient RθJA 62.5 °C/W Maximum Junction-to-Case RθJC 0.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature

VER 1. 1 2 Packaging Type TO -220 DRAIN connected to TAB N -Channel MOSFET G D S

Ordering information

ZM:TO-220 Pb - free Halogen - free

VER 1. 1 3

Electrical Characteristics

TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 1 uA VDS = 48 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 110 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 30A 8 mΩ VGS = 4.5 V, ID = 20A 13 Forward Transconductance a gfs VDS = 15 V, ID = 20 A 40 S Diode Forward Voltage a VSD IS = 55A, VGS = 0 V 1.1 V Dynamic b Total Gate Charge Qg VDS = 30 V, VGS = 4.5 V, ID = 20 A nC Gate-Source Charge Qgs 28 Gate-Drain Charge Qgd 36 Turn-On Delay Time td(on) VDD = 30 V, RL = 1.5 Ω , ID = 20 A, VGEN = 10 V, RGEN = 6 Ω ns Rise Time tr 60 Turn-Off Delay Time td(off) 174 Fall Time tf 52 Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f =1 MHz 9289 pF Output Capacitance Coss 572 ReverseTransfer Capacitance Crss 555 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.

VER 1. 1 4 Typical Performance Characteristics (N-Channel) ID-Drain Current (A) VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance

VER 1. 1 5 Typical Performance Characteristics Qg - Total Gate Charge (nC) TJ –Junction Temperature(°C) 7. Gate Charge 8. Normalized On -Resistance Vs Junction Temperature VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient

VER 1. 1 6 Packing Information TO-220 SYMBOL DIMENSIONAL REQMTS INCHES REQMTS MIN NOM MAX MIN NOM MAX e 2.54BSC 0.100BSC

VER 1. 1 7 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/