ACE11011B ACE | Alldatasheet
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Technical content
Features
VDS=100V ID=83A RDS(ON)@VGS=10V,TYP 4.3mΩ RDS(ON)@VGS=6V,TYP 5.2mΩ RDS(ON)@VGS=4.5V,TYP 6.8mΩ Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(Continuous) *AC TC=25℃ ID A TC=70℃ 66.1 Drain Current(Pulsed) *B IDM 200 A Power Dissipation TC=25℃ PD 83 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Note : A. The value of R θJA is measured with the device mounted on 1in2 FR -4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating Thermal Resistance Ratings Parameter Symbol Typical Maximum Units Maximum Junction-to-Ambient t ≤ 10 s RthJA 18 23 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1 1.5
N-Channel Enhancement Mode Power MOSFET VER 1. 1 2 Packaging Type DFN5*6-8L
Ordering information
PN：DFN5*6-8L Pb - free Halogen - free
N-Channel Enhancement Mode Power MOSFET VER 1. 1 3
Electrical Characteristics
TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID= 250μA 100 V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 μA Gate Threshold Voltage VGS(TH) VGS = VDS, IDS= 250μA 1 2.1 3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Drain-Source On-state Resistance RDS(on) VGS = 10V, ID = 20A 4.3 5.5 mΩ VGS =6V, ID = 20A 5.2 6.7 VGS = 4.5V, ID = 20A 6.8 8.7 Diode Forward Voltage VSD ISD= 1A , VGS=0V 0.69 1.2 V Diode Forward Current *AC IS TC =25°C 83 A Switching Total Gate Charge Qg VGS=10V ,VDS=50V, ID=15A nC Gate-Source Charge Qgs 18 Gate-Drain Charge Qgd 9 Turn-on Delay Time td ( on ) VGEN=10V,VDD=50V, RL=3.3Ω, RG=1Ω, ID=15A ns Turn-on Rise Time tr 8 Turn-off Delay Time td( off ) 35 Turn-Off Fall Time tf 6.5 Dynamic Input Capacitance Ciss VDS=50V,VGS=0V, f=1.0MHz 3720 pF Output Capacitance Coss 284 Reverse Transfer Capacitance Crss 16
N-Channel Enhancement Mode Power MOSFET VER 1. 1 4 Typical Performance Characteristics (TJ = 25 °C, unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET VER 1. 1 5
N-Channel Enhancement Mode Power MOSFET VER 1. 1 6
N-Channel Enhancement Mode Power MOSFET VER 1. 1 7 Packing Information DFN5*6-8L
N-Channel Enhancement Mode Power MOSFET VER 1. 1 8 Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/