A94 KOOCHIN | Alldatasheet
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Technical content
A94 TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO I C= -100μA, IE=0 -400 V Collector-emitter breakdown voltage V(BR) CEO I C= -1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR) EBO I E=-100μA,IC=0 -5 V Collector cut-off current ICBO V CB=-400V, IE=0 -0.1 μA Collector cut-off current ICEO V CE=-400V, IB=0 -5 μA Emitter cut-off current IEBO V EB= -4V, IC=0 -0.1 μA hFE(1) V CE=-10V, IC=-10mA 80 300 hFE(2) V CE=-10V, IC=-1mA 70 DC current gain hFE(3) V CE=-10V, IC=-100mA 60 VCE (sat) I C=-10mA, IB=-1mA -0.2 V Collector-emitter saturation voltage VCE (sat) I C=-50mA, IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) I C=-10mA, IB= -1mA -0.75 V Transition frequency fT VCE=-20V, IC=-10mA f =30MHz 50 MHz 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR