A92 KOOCHIN | Alldatasheet
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Technical content
A92 TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C=-100uA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO I C=-1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO I E=-100μA, IC=0 -5 V Collector cut-off current ICBO V CB= -200 V I E=0 -0.25 μA Emitter cut-off current IEBO V EB= -5 V, IC=0 -0.1 μA hFE(1) V CE= -10 V, IC=- 1 mA 60 hFE(2) V CE= -10V, IC = -10 mA 80 250 DC current gain hFE(3) V CE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) I C= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) I C= -20 mA, IB= -2 mA -0.9 V Transition frequency fT VCE= -20 V, IC= -10 mA f = 30MHz 50 MHz CLASSIFICATION OF hFE(2) Rank A B 1 B 2 C Range 80-100 100-150 150-200 200-250 1 2 3 TO-92 1.EMITTER 2.BASE 3.COLLECTOR