2N4058 NJSEMI | Alldatasheet
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New Jersey Semi-Conductor Products, Ine. a 20 STERN AVE. TELEPHONE: (201) 376-2922 SPRINGFIELD, NEW JERSEY 07081 : (212) 227-6005 TYPES 2N4058 THRU 2N4062, A5T4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON TRANSISTORS BULLETIN NO. OL-S 7311962, MARCH 1973 ee SILECTt TRANSISTORS? e@ Ideal for Low-Level Amplifier Applications © Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration © Recommended for Complementary Use with 2N3707 thru 2N3711, A5T3707 thru A5T3711, or A8T3707 thru A8T3711 mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STO-202C, Method 1068. The transistors are insensitive to light. 2N4058 THRU 2N4062, A8T4058 THRU A8T4062 *ALL JEOEC TO.92 DIMENSIONS AND NOTES ARE APPLICABLE ap 2280 (WOH A) - 000 8b 2N4058 ABT4068 poses 0100 7 Oo Lee fence t3908 thru thru om ity "t \\ 2N4062 AgT4062 oR — i — ss Wess - NOTES *A Lead ciameter is not controtied in this area All dumensions are in inehos TEAD ece EBc AST4058 THRU A5T4062 wi emery " ed oe == SP RPS co 288°? ome aaFR Oem rheos ~S rcouteron NOTES: A Lead arameter isnot controlied in this area 8. Leads having maximum diameter (0.019) shall be within 0.007 of their rue positions measured in the gaging plane 0054 below the seating plane of the device relative to 8 maximum diameter package All aimansions are in inches absolute maximum ratings at 25°C free-air temperature (unless otherwise noted) . Collector-Base Voltage Ce ee =80VE Collector-Emitter Voltage (See Note 1) : Le ee ee ee BOVE Emitter-Base Voltage Le See De ee ee BE Continuous Collector Current Lee Se ee ee BBO MAS Storage Temperature Range : : : be ee ee es 65°C to 150°C* Lead Temperature 1/16 Inch from Case for 10Seconds . 2 2. ee ee ee ee ee es 260°C* NOTES: 1. This value applies when the pase-emitter diode is open-circuited. 2. Derate the 625.mW rating linearly to 150°C free-air temperature at the rate of 8 mW/*C. Derate the 360-mW (JEDEC registered) rating linearly to 150°C free-air temperature at the rate of 2.88 mW/°C. . +The asterisk identities JEDEC registered date for the 2N4088 through 2N4062 only. This date sheet contains all epplicable registered date in effect at the time of publication