A733

H733 KISEMICONDUCTOR | Alldatasheet

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Technical content

█ APPLICATIONS The H733 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -60 V IC=-100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage -50 V IC=-10mA, I B=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-10μA，IC=0 HFE DC Current Gain 90 600 VCE=-6V , IC=-1mA VCE(sat) Collector- Emitter Saturation V oltage -0.3 V IC=-100mA, IB=-10mA VBE(ON) Base-Emitter On V oltage -0.5 -0.8 V VCE=-6V , IC=-1mA ICBO Collector Cut-off Current -100 nA VCB=-60V , IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V , IC=0 fT Current Gain-Bandwidth Product 180 MHz VCE=-6V , IC=-10mA Cob Output Capacitance 4.5 pF VCB=-10V , I E=0 ， f=1MHz █ hFE Classification R Q P K 90—180 135—270 200—400 300—600 1―Emitter，E 2―Base，B 3―Collector，C TO-92 A733 PNP S I L I C O N T R A N S I S T O R