2SA0683 PANASONIC | Alldatasheet
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1Publication date: February 2004 SJC00001CED 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 ■ Features
- Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C 5.9±0.2 0.7±0.1 4.9±0.2 8.6±0.2 0.7+0.3 –0.2 13.5±0.5 2.54±0.15(3.2) (1.27)(1.27) 0.45+0.2 –0.1 0.45+0.2 –0.1 13 2 Unit: mm 1: Emitter 2: Collector 3: Base EIAJ: SC-51 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE 85 to 170 120 to 240 170 to 340 Parameter Symbol Rating Unit Collector-base voltage 2SA0683 V CBO −30 V (Emitter open) 2SA0684 −60 Collector-emitter voltage 2SA0683 V CEO −25 V (Base open) 2SA0684 −50 Emitter-base voltage (Collector open) V EBO −5V Collector current I C −1A Peak collector current I CP −1.5 A Collector power dissipation P C 1W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage 2SA0683 V CBO IC = −10 µA, IE = 0 −30 V (Emitter open) 2SA0684 −60 Collector-emitter voltage 2SA0683 V CEO IC = −2 mA, IB = 0 −25 V (Base open) 2SA0684 −50 Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −500 mA 85 340 hFE2 VCE = −5 V, IC = −1 A 50 Collector-emitter saturation voltage V CE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V Base-emitter saturation voltage V BE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.20 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF (Common base, input open circuited) Note) The part numbers in the parenthesis show conventional part number.
2SA0683, 2SA0684
2 SJC00001CED
VCE(sat) IC VBE(sat) IC hFE IC PC Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0 160 40 120 80 1.2 1.0 0.8 0.6 0.4 0.2 Collector power dissipation PC (W) Ambient temperature Ta (°C) −1.5 −1.25 −1.0 − 0.75 − 0.50 − 0.25 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA Ta = 25°C Collector current IC (A) Collector-emitter voltage VCE (V) −1.2 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 VCE = −10 V Ta = 25°C Base current IB (mA) Collector current IC (mA) − 0.01 − 0.1 −10 −100 Ta = 75°C 25°C −25°C IC / IB = 10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) − 0.01 − 0.1 −10 −100 IC / IB = 10 Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) 600 500 400 300 200 100 VCE = −10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (A) 1 10 100 200 160 120 VCB = −10 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 0.1 1 10 100 −120 −100 −80 −60 −40 −20 IC = −10 mA Ta = 25°C 2SA0684 2SA0683 Base-emitter resistance RBE (kΩ) Collector-emitter voltage (Resistor between B and E) VCER (V)
2SA0683, 2SA0684 3SJC00001CED ICEO Ta Safe operation area 01 6 0 40 120 80 102 103 104 VCE = −10 V Ambient temperature Ta (°C) ICEO (Ta) ICEO (Ta = 25°C) − 0.1 −1 −10 −100 −10−3 −10−2 −10−1 −10 Single pulse Ta = 25°C t = 10 ms 2SA0684 2SA0683 t = 1 s ICP IC Collector current IC (A) Collector-emitter voltage VCE (V)
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