A44 KOOCHIN | Alldatasheet
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Technical content
A44 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C= 100μA , IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO I E=100μA, IC=0 5 V Collector cut-off current ICBO V CB=400 V, IE=0 0.1 μA Collector cut-off current ICEO V CE=400 V 5 μA Emitter cut-off current IEBO V EB= 4V, IC=0 0.1 μA hFE (1) V CE=10V , IC=10mA 80 300 hFE(2) V CE=10V, IC=1mA 70 hFE(3) V CE=10V, IC=100mA 40 DC current gain hFE(4) V CE=10V, IC=50mA 80 VCE(sat) I C=10mA, IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat) I C=50mA, IB=5mA 0.3 V Base-emitter sataration voltage VBE(sat) I C=10mA, IB= 1mA 0.75 V Transition frequency f T VCE=20V, IC=10mA f =30MHz 50 MHz CLASSIFICATION OF hFE(1) Rank A B1 B2 C Range 80-100 100-150 150-200 200-300 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR