A42 KOOCHIN | Alldatasheet
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Technical content
A42 TRANSISTOR ( NPN)
FEATURES
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO V CB=200V, IE=0 0.25 μA Emitter cut-off current IEBO V EB=5V, IC=0 0.1 μA hFE(1) V CE=10V, IC=1mA 60 hFE(2) V CE=10V, IC=10mA 80 250 DC current gain hFE(3) V CE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) I C=20mA, IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) I C=20mA, IB=2mA 0.9 V Transition frequency fT V CE=20V, IC=10mA,f=30MHZ 50 MHz CLASSIFICATION OF hFE(2) Rank A B 1 B 2 C Range 80-100 100-150 150-200 200-250 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR
T y p i c a l C h a r a c t e r i s t i c s A 4 2