BSM75GB170DN2 SIEMENS | Alldatasheet

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Semiconductor Group 1 Jul-16-1996 BSM 75 GB 170 DN2 IGBT Power Module Preliminary data

  • Half-bridge
  • Including fast free-wheeling diodes
  • Package with insulated metal base plate
  • R G on,min = 22 Ohm Type VCE IC Package Ordering Code BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage R GE = 20 kΩ VCGR 1700 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 110 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 150 220 Power dissipation per IGBT TC = 25 °C Ptot 625 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 0.2 K/W Diode thermal resistance, chip case R thJCD ≤ 0.63 Insulation test voltage, t = 1min. Vis 4000 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 2 Jul-16-1996 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 5 mA VGE(th) 4.8 5.5 6.2 V Collector-emitter saturation voltage VGE = 15 V, IC = 75 A, Tj = 25 °C VGE = 15 V, IC = 75 A, Tj = 125 °C VCE(sat) 4.6 3.4 5.3 3.9 Zero gate voltage collector current VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C ICES 0.5 0.75 mA Gate-emitter leakage current VGE = 20 V, VCE = 0 V IGES - - 400 nA AC Characteristics Transconductance VCE = 20 V, IC = 75 A gfs 27 - - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 11 - nF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 1 - Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 0.28 -

Semiconductor Group 3 Jul-16-1996 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 1200 V, VGE = 15 V, IC = 75 A R Gon = 22 Ω td(on) - 400 800 ns Rise time VCC = 1200 V, VGE = 15 V, IC = 75 A R Gon = 22 Ω tr - 150 300 Turn-off delay time VCC = 1200 V, VGE = -15 V, IC = 75 A R Goff = 22 Ω td(off) - 650 1000 Fall time VCC = 1200 V, VGE = -15 V, IC = 75 A R Goff = 22 Ω tf - 90 140 Free-Wheel Diode Diode forward voltage IF = 75 A, VGE = 0 V, Tj = 25 °C IF = 75 A, VGE = 0 V, Tj = 125 °C VF 2.1 2.3 2.8 V Reverse recovery time IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C trr - 0.3 - µs Reverse recovery charge IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C Q rr µC

Semiconductor Group 4 Jul-16-1996 BSM 75 GB 170 DN2 Power dissipation Ptot = ƒ(TC ) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 100 150 200 250 300 350 400 450 500 550 W 650 Ptot Safe operating area IC = ƒ(VCE ) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 3 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs 10 µs 1 µs tp = 800.0ns Collector current IC = ƒ(TC ) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 100 A 120 IC Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 5 Jul-16-1996 BSM 75 GB 170 DN2 Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C VCE 100 110 120 130 A 150 IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C VCE 100 110 120 130 A 150 IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 VGE 100 120 140 160 180 200 220 240 260 A 300 IC

Semiconductor Group 6 Jul-16-1996 BSM 75 GB 170 DN2 Typ. gate charge VGE = ƒ(Q Gate) parameter: IC puls = 75 A Q Gate V VGE

1200 V800 V

Typ. capacitances C = f (VCE ) parameter: VGE = 0, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE -1 10 0 10 1 10 2 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE ) , Tj = 150°C parameter: VGE = 15 V 0 250 500 750 1000 1250 1500 V 2000 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f(VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 0 250 500 750 1000 1250 1500 V 2000 VCE ICsc/IC

Semiconductor Group 7 Jul-16-1996 BSM 75 GB 170 DN2 Typ. switching time I = f (IC ) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, R G = 22 Ω 0 20 40 60 80 100 120 140 A 180 IC 1 10 2 10 3 10 4 10 ns t tdoff tr tdon tf Typ. switching time t = f (RG ) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, IC = 75 A 0 20 40 60 80 Ω 120 R G 1 10 2 10 3 10 4 10 ns t tdoff tr tdon tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, R G = 22 Ω 0 20 40 60 80 100 120 140 A 180 IC 100 120 140 160 mWs 200 E Eon Eoff Typ. switching losses E = f (RG ) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, IC = 75 A 0 20 40 60 80 Ω 120 R G 100 120 140 160 mWs 200 E Eon Eoff

Semiconductor Group 8 Jul-16-1996 BSM 75 GB 170 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj VF 100 110 120 130 A 150 IF Tj=25°C =125°CjT Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 9 Jul-16-1996 BSM 75 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g