2SA1512 PANASONIC | Alldatasheet
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Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 n Features l Low collector to emitter saturation voltage VCE(sat). l Optimum for low-voltage operation and for converters. l Allowing supply with the radial taping. l Optimum for high-density mounting. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –25 –20 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –25V, IE = 0 V CE = –20V , IB = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –0.5A*2 V CE = –2V , IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –25 –20 typ 150 max –100 220 – 0.4 –1.2 Unit nA mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 *2 Pulse measurement
0 160 40 120 80 14020 100 60 500 400 300 200 100 450 350 250 150 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 320 240 200 280 160 120 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB