2SA1276 NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1276
DESCRIPTION
- Collector-Emitter Breakdown Voltage : V(BR)CEo= -SOV(Min)
- Good Linearity of hFE
- Complement to Type 2SC3230
APPLICATIONS
- Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) PIN 1.BASE 2.COLLECTOR 3. EMITTER TO-220C package SYMBOL VCBO VCEO VEBO Ic IE PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Total Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -30 -30 150 -55-150 UNIT V V V A A W f **Q U 1 A T I * H K T JL C A H i DtW A B C D F H J K L Q R S U V B M V * Ul zrO TT^L r-r" Gh m WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 m MAX 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 NJ Semi-Condiietors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished hy N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conduetors assumes no responsibility tor an> errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that ilatnsheels are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1276
ELECTRICAL CHARACTERISTICS
Tc=25t: unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) VeE(on) ICBO IEBO hpE-1 hFE-2 ft COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc= -10mA; le= 0 !E=-1mA; lc=0 IG= -2A; IB= -0.2A lc= -0.5A; VCE= -2V VCB= -20V; IE= 0 VEB= -5V; lc= 0 lc= -0.5A; VCE= -2V lc= -2.5A; VCE= -2V lc= -0.5A;VCE= -2V IE=0; VCB= -10V; f,est= 1.0MHz MIN -30 TYP. 100 MAX -0.8 -1.0 -1.0 -1.0 240 UNIT V V V V uA u A MHz PF
- h.FE-1 Classifications o 70-140 Y 120-240