2SA1124 PANASONIC | Alldatasheet
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Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 n Features l Satisfactory foward current transfer ratio hFE collector current IC characteristics. l High collector to emitter voltage VCEO . l Small collector output capacitance Cob. l Makes up a complementary pair with 2SC2632, which is opti- mum for the pre-driver stage of a 40 to 60W output amplifier. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9–0.2 2.54–0.15 0.7–0.1 4.9–0.2 8.6–0.2 0.7 +0.3 –0.2 13.5–0.53.2 0.45 +0.2 –0.1 1.271.27 0.45 +0.2 –0.1 13 2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –150 –150 –100 –50 150 –55 ~ +150 Unit V V V mA mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol I CBO V CEO V EBO hFE * V CE(sat) fT C ob NV Conditions V CB = –100V , IE = 0 IC = –0.1mA, IB = 0 IE = –10mA, IC = 0 V CE = –5V , IC = –10mA IC = –30mA, IB = –3mA V CB = –10V , IE = 10mA, f = 200MHz V CE = –10V , IE = 0, f = 1MHz V CE = –10V , IC = –1mA, GV = 80dB R g = 100kW , Function = FLAT min –150 130 typ 200 150 max 450 300 Unit mA V V V MHz pF mV *hFE Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450
0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –80 –60 –20 –50 –70 –40 –10 –30 Ta=25˚C –100mA –150mA –200mA –250mA –300mA –350mA –400mA –450mA –50mA IB=–500mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –120 –100 –80 –60 –40 –20 VCE =–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 300 250 200 150 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I E C ob —V CB