97A8 LITEON | Alldatasheet

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MAXIMUM RATINGS (Tj= 25 unless otherwise noticed)℃

FEATURES

One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110 )℃ Pb-Free Package Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACs 0.8AMPERES RMS

600 VOLTS

Peak Repetitive Off– State Voltage ( TJ= -40 to 125 ℃, Sine Wave, 50 to 60 Hz; Gate Open) VDRM , VRRM 600 Volts On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz ( TC = 50 ℃) IT(RMS) 0.8 Amp Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25 ℃) ITSM 9.0 Amps Circuit Fusing Consideration (t = 8.3 ms) I t 0.34 A s Peak Gate Power ( t 2.0us ,Tc = 80≦ ℃) PGM 5.0 Watt Average Gate Power ( Tc = 80 , t 8.3 ms )℃ ≦ PG(AV) 0.1 Watt Peak Gate Current ( t 2.0us ,Tc = 80≦ ℃) IGM 1.0 Amp Peak Gate Voltage ( t 2.0us ,Tc = 80≦ ℃) VGM 5.0 Volts Operating Junction Temperature Range TJ -40 to +110 ℃ Storage Temperature Range Tstg -40 to +150 ℃ 2 2 REV. 2, Oct-2010, KTXD23 Notice: (1) V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TO-92 (TO-226AA) All Dimensions in millimeter TO-92 DIM. MIN. MAX. A C D E F G B 4.45 4.70 5.33 4.32 3.18 4.19 1.39 1.15 2.42 2.66 2.04 2.66 3.43 I ----- SEMICONDUCTOR LITE-ON

1 Main Terminal 1

2 Gate

3 Main Terminal 2

This datasheet has been downloaded from http://www.digchip.com at this page

RATING AND CHARACTERISTIC CURVES 97A8 Characteristic Symbol Value Unit Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient RthJL RthJC RthJA 150 /℃ W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds TL 260 ℃ Characteristics Symbol Min Typ Max Unit Peak Reptitive Forward or Reverse Blocking Current T j =25 ℃ (VD=Rated VDRM and VRRM; Gate OPen) T j =110℃ IDRM IRRM ---- ---- ---- ---- 100 uA uA Peak Forward On-State Voltage TM= ± 1A Peak @Tp 2.0 ms, Duty Cycle 2%)≦ ≦ VTM ---- ---- 1.9 Volts Gate Trigger Current (V D = 12 Vdc; R L = 100 Ohms) IGT1 IGT2 IGT3 IGT4 ---- ---- ---- ---- ---- ---- ---- ---- 5.0 5.0 5.0 7.0 mA Holding Current (V D = 12 V, Initiating Current = ± 200 mA, Gate Open) IH ---- 1.5 10 mA Turn-On Time (V D = Rated VDRM , I TM = 1.0 A pk, I G = 25 mA) tgt ---- 2 ---- us Gate Trigger Voltage (V D = 12 Vdc; R L =100 Ohms) VGT1 VGT2 VGT3 VGT4 ---- ---- ---- ---- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 Volts Latching Current (V D=12V,I G = 10 mA) IL1 IL2 IL3 IL4 ---- ---- ---- ---- 1.6 10.5 1.5 2.5 mA Gate Non-Trigger Voltage (V D= 12V, R L= 100 Ohms , T J=110 ℃) VGD 0.1 ---- ---- Volts Critical Rate of Rise of Off-State Voltage D=Rated V DRM ,Exponential Waveform, Gate Open, T J=110 )℃ dv/dt 20 60 ---- V/us THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (T c=25 unless otherwise noted)℃ OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS

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