95N68A WUMC | Alldatasheet
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TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com General Description Trench Power Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications\`
Applications
Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Package Form Marking TTB95N68A TO-263 Tape&Reel 95N68A TTP95N68A TO-220 Tube 95N68A VDS 68V ID (at VGS=10V) 95A RDS(ON) (at VGS=10V) < 7.5mΩ 100% UIS Tested 68V N-Channel Trench MOSFET Product Summary Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS 68 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 66 Pulsed Drain Current A IDM 285 A Avalanche Current A IAS 37 A Single Pulse Avalanche Energy L =0.3mH A EAS 380 mJ Power Dissipation C TC = 25ºC PD 130.5 W TC = 100ºC 65.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 ºC Thermal Characteristics Parameter Symbol Maximum Units Maximum Junction-to-Case Steady-State RthJC 1.15 ºC/W Maximum Junction-to-Ambient Steady-State RthJA 100 TO-263 TO-220
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Value Units Min Typ Max STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µ A,VGS =0V 68 -- -- V IDSS Zero Gate Voltage Drain Current VDS =68V, VGS =0V TJ =25ºC -- -- 1 μA TJ =100ºC -- -- 25 IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µ A 2 3 4 V RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A -- 6.5 7.5 mΩ gFS Forward Transconductance VDS = 5V, ID =20A -- 30 -- S VSD Diode Forward Voltage IS =20A, VGS =0V -- -- 1 V IS Maximum Body-Diode Continuous Current B -- -- 95 A DYNAMIC PARAMETERS Ciss Input Capacitance VGS =0V, VDS =30V, f =1MHZ -- 4169 -- pF Coss Output Capacitance -- 274 -- Crss Reverse Transfer Capacitance -- 222 -- SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS =10V,VDS =30V, ID =30A -- 70 -- nC Qgs Gate Source Charge -- 20 -- Qgd Gate Drain Charge -- 18 -- tD(on) Turn-On Delay Time VGS =10V,VDS =30V, ID =30A, RG =3Ω -- 15 -- ns tr Turn-On Rise Time -- 94 -- TD(off) Turn-Off Delay Time -- 46 -- tf Turn-Off Fall Time -- 32 -- trr Body Diode Reverse Recovery Time IF =20A, di/dt =100A/μs -- 78 -- ns Qrr Body Diode Reverse Recovery Charge -- 51 -- nC A. Single pulse width limited by maximum junction temperature. B. The maximum current rating is package limited. C. The power dissipation PD is based on TJ(MAX) =175ºC, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-263(E)
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-263(H) Unit:mm Symbol Min. Nom Max. A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0.00 0.13 0.25 b 0.70 0.81 0.96 b1 1.17 1.27 1.47 c 0.30 0.38 0.53 D1 8.50 8.70 8.90 D4 6.60 - - Unit:mm Symbol Min. Nom Max. E 9.86 10.16 10.36 E5 7.06 - - e 2.54BSC H 14.70 15.10 15.50 H2 1.07 1.27 1.47 L 2.00 2.30 2.60 L1 1.40 1.55 1.70 L4 0.25BSC θ 0° 5° 9°
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-263(I)
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-220(E)
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-220(H) Unit:mm Symbol Min. Nom Max. A 4.37 4.57 4.70 A1 1.25 1.30 1.40 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.45 0.50 0.60 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - Unit:mm Symbol Min. Nom Max. E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-220(I)
TTB95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.