BM9435A BOOKLY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

Applications

  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems ; LCD-TV ; LCD-monitor ; Net-card Pin Description Ordering and Marking Information P-Channel MOSFET
  • -30V/-5.3A , RDS(ON)=65mΩ (typ.) @ VGS=-10V RDS(ON)=100mΩ(t yp.) @ VGS=-4.5V
  • Super High Dense Cell Design
  • Reliable and Rugged
  • Lead Free Available (RoHS Compliant) Top View of SOP − 8 ( 1, 2, 3 ) D G D S S (4) (5,6,7,8) S D 1 2 3 4 S S S G

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com2 BM9435A Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V ID* Continuous Drain Current -5.3 IDM* Pulsed Drain Current VGS=-10V -20 A IS* Diode Continuous Forward Current -2 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD* Maximum Power Dissipation TA=100°C 0.8 W RθJA * Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. BM9435A Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TA=25°C -30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.6A 65 60 RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-2A 100 95 mΩ VSD a Diode Forward Voltage ISD=-2A, VGS=0V -0.9 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge 27 32 Qgs Gate-Source Charge 4 Qgd Gate-Drain Charge VDS= -15V, VGS=-10V, IDS= - 5A 6.5 nC

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com3 BM9435A Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted BM9435A Symbol Parameter Test Condition Min. Typ. Max. Unit Dynamic Characteristics b Ciss Input Capacitance 545 Coss Output Capacitance 85 Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz 55 pF td(ON) Turn-on Delay Time 12 Tr Turn-on Rise Time 8 15 td(OFF) Turn-off Delay Time 25 46 Tf Turn-off Fall Time VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 5 10 ns trr Reverse Recovery Time 56 ns Qrr Reverse Recovery Charge IDS=-4.6A, dlSD/dt=100A/µs 30 nC Notes: a : Pulse test ; pulse width≤300µ s, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com4 BM9435A 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad Rθ JA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Typical Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25 o C 0 20 40 60 80 100 120 140 160 TA=25 o C,VG=-10V 0.01 0.1 1 10 100 0.01 0.1 100 300µs Rds(on) Limit TA=25 o C 10ms 100ms DC 1ms Normalized Transient Thermal Resistance

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com5 BM9435A RDS(ON) - On - Resistance (mΩ ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) Typical Characteristics (Cont.) 0 1 2 3 4 5 6 7 8 -4V -3V 0 2 4 6 8 10 12 14 16 18 20 100 110 120 130 140 VGS= -4.5V VGS= -10V 0 1 2 3 4 5 Tj=125 o C Tj=25 o C Tj=-55 o C -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS = -250µA

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com6 BM9435A -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RON@Tj=25 o C: 52mΩ VGS = -10V IDS = -4.6A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 100 200 300 400 500 600 700 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 VD= -15V ID= -4.6A

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com7 BM9435A Packaging Information Millimeters Inches Dim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 0° 8° 0° 8° SOP-8 pin (Reference JEDEC Registration MS-012) HE e1 e2 0.015X45 D AA1 0.004max. L

Copyright  ANPEC Electronics Corp. Rev. B.2 - Nov., 2006 www.bookly.com8 BM9435A Carrier Tape & Reel Dimensions t Ao E W Po P Ko Bo D F Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP- 8 12 9.3 2500 A J B C Application A B C J T1 T2 W P E 330±1 62 ± 1.5 12.75 + 0.1 5 - 0.1 8± 0.1 1.75± 0.1 F D D1 Po P1 Ao Bo Ko t SOP-8 (mm)