BUK9Y40-55B NEXPERIA | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 12
Technical content
1.1 General description
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. in automotive critical applications.
1.2 Features
1.3 Applications
1.4 Quick reference data
Table 1. Quick reference
[1] Single-pulse avalanche ra ting limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. Table 2. Pinning
1 S source
2 S source
3 S source
4 G gate
Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 3 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period 03nn93 0 50 100 150 200 Tmb (°C) ID (A) Tmb (°C) 0 200 15050 100 03na19 120 Pder (%) VGS 5V Pder = Ptot Ptot (25°C) × 100 % 03np80 tAV (ms) 10−3 10110−2 10−1 10−1 102 IAV (A) 10−2 (1) (2) (3) (1) Singleípulse;T j =2 5°C. (2) Singleípulse;T j = 150°C. (3) Repetitive. © Nexperia B.V. 2017. All rights reserved
Table 5. Thermal characteristics
Table 6. Characteristics
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 6 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 8. Sub-threshold drain current as a function of gate-source voltage Fig 9. Forward transconductance as a function of drain current; typical values VDS (V) 01 0 8462 03np10 I D (A) VGS (V) = 10 6.0 5.0 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 VGS (V) 01 5 105 03np09 R DSon (mΩ) T j =2 5°C; tp = 300ȝs T j =2 5°C; ID =1 5A 03ng53 VGS (V) 03 21 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max ID (A) 01 6 1248 03np07 gfs (S) T j =2 5°C;VDS = VGS T j =2 5°C;VDS =2 5V © Nexperia B.V. 2017. All rights reserved
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 7 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature VGS (V) 04 312 03np08 ID (A) Tj = 25 °CTj = 175 °C −60 18012006 0 03ng52 1.0 1.5 0.5 2.0 2.5 VGS(th) (V) Tj (°C) min typ max VDS =2 5V ID =1 mA;VDS = VGS ID (A) 06 0 4020 03np11 R DSon (mΩ) VGS (V) = 10 Tj (°C) −60 18012006 0 03nb25 0.8 1.6 2.4 a T j =2 5°C a = RDSon RDSon (25°C) © Nexperia B.V. 2017. All rights reserved
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 8 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 16. Source current as a function of source-drain voltage; typical values 03np06 QG (nC) 01 5 105 VGS (V) VDS = 14 V VDS = 44 V 03np12 700 350 1050 1400 C (pF) VDS (V) 10−1 102101 Ciss Coss Crss T j =2 5°C; ID =1 5A VGS =0 V; f =1 MHz 03np05 VSD (V) 0 1.5 1.00.5 IS (A) Tj = 175 °C Tj = 25 °C VGS =0 V © Nexperia B.V. 2017. All rights reserved
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 9 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET 7. Package outline Fig 17. Package outline SOT669 (LFPAK) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT669 MO-235 04-10-13 06-03-16 0 2.5 5 mm scale e b A2 bcA eUNIT DIMENSIONS (mm are the original dimensions) mm 1.10 0.95 A3A1 0.15 0.00 1.20 1.01 0.50 0.35 4.41 3.62 2.2 2.0 0.9 0.7 0.25 0.19 0.30 0.24 4.10 3.80 6.2 5.8 H 1.3 0.8 0.85 0.40 L 1.3 0.8 wyD (1) 5.0 4.8 E (1) 3.3 3.1 (1)D1(1) max 1 23 4 mounting base c Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 E H D A Aw M C C X 1/2 e yC θ θ (A )3 L A detail X Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. © Nexperia B.V. 2017. All rights reserved
Table 7. Revision history guidelines of NXP Semiconductors.
- Legal texts have been adapted to the new company name where appropriate. BUK9Y40-55B_2 20060411 Product data sheet - BUK9Y40_55B-01 BUK9Y40_55B-01 20040528 Product data sheet - - © Nexperia B.V. 2017. All rights reserved
BUK9Y40-55B_3 Product data sheet Rev. 03 — 22 February 2008 11 of 12 Nexperia BUK9Y40-55B N-channel TrenchMOS logic level FET 9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any represent ations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales offi ce. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warrant ies, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes t o information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, author ized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and theref ore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no represent ation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms , including those pertaining to warranty, inte llectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conf lict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. © Nexperia B.V. 2017. All rights reserved
N-channel TrenchMOS logic level FET 11. Contents © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: