90N03AT WUMC | Alldatasheet

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V1.1 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics CO.,LTD.  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications

Applications

 Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Package Marking TTG90N03AT DFN5x6 90N03AT 30V N-Channel Trench MOSFET(Preliminary) Features Product Summary Absolute Maximum Ratings TC = 25º C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 30 V Continuous Drain Current B TC = 25ºC ID A TC = 100ºC 51 Pulsed Drain Current A IDM 270 A Gate-Source Voltage VGSS ±20 V Single Pulse Avalanche Energy L =0.3mH A EAS 72 mJ Avalanche Current A IAs 22 A Power Dissipation C TC = 25ºC PD 108 W TC = 100ºC PD 82 W Operating Junction and Storage Temperature Range TJ, TSGT -55~+175 ºC VDS 30V RDS(ON) (at VGS=10V) < 5mΩ RDS(ON) (at VGS=4.5V) < 7mΩ ID (at VGS=10V) 90A 100% UIS Tested Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.45 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 100 S S S G D D D D DFN5x6

V1.1 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics CO.,LTD. Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 30V, VGS = 0V, TJ = 100ºC -- -- 25 Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 1.0 1.7 2.4 V Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 3.6 5.0 mΩ VGS = 4.5V, ID = 30A -- 5 7.0 mΩ Forward Transconductance gfs VDS = 10V, ID =20A 17.3 -- -- S Dynamic Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 1608 -- pF Output Capacitance Coss -- 513 -- Reverse Transfer Capacitance Crss -- 297 -- Total Gate Charge Qg VDD = 15V, ID = 50A, VGS = 10V -- 62 -- nC Gate-Source Charge Qgs -- 7 -- Gate-Drain Charge Qgd -- 13 -- Turn-on Delay Time td(on) VDD = 15V, ID = 50A, RG = 3Ω -- 13 -- ns Turn-on Rise Time tr -- 17 -- Turn-off Delay Time td(off) -- 42 -- Turn-off Fall Time tf -- 13 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current B IS TC = 25ºC -- -- 46 A Pulsed Diode Forward Current A ISM -- -- 270 Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Time trr IF = 30A, diF/dt = 100A/μs -- 40 -- ns Reverse Recovery Charge Qrr -- 88 -- nC Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. VDD = 30V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%

V1.1 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics CO.,LTD. Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

V1.1 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics CO.,LTD. DFN5x6(M)

V1.1 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics CO.,LTD. DFN5x6(V)

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