8205A HSMC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 4

Technical content

Features

  • RDS(on)=38mΩ @VGS=2.5V, ID=5.2A; RDS(on)=25mΩ @VGS=4.5V, ID=6A
  • High Density Cell Design for Ultra Low On-Resistance
  • High Power and Current Handing Capability
  • Fully Characterized Avalanche Voltage and Current
  • Ideal for Li ion Battery Pack Applications

Applications

  • Battery Protection
  • Load Switch
  • Power Management Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Drain Current (Continuous) 6 A IDM Drain Current (Pulsed) *1 30 A Total Power Dissipation @TA=25oC 1.5 W PD Total Power Dissipation @TA=75oC 0.96 W Tj, Tstg Operating and Storage Temperature Range -55 to +150 °C RθJA Thermal Resistance Junction to Ambient*2 83 °C/W *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 1234 5678

MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 2/4 8205A HSMC Product Specification Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit

  • Static BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V VGS=2.5V, ID=5.2A - 33 38 RDS(on) Drain-Source On-State Resistance VGS=4.5V, ID=6A - 20 25 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.6 - 1.5 V IDSS Zero Gate Voltage Drain Current V DS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±100 nA gFS Forward Transconductance V DS=10V, ID=6A 7 13 - S
  • Dynamic Qg Total Gate Charge - 4.86 - Qgs Gate-Source Charge - 0.92 - Qgd Gate-Drain Charge VDS=10V, ID=6A, VGS=4.5V - 1.4 - nC Ciss Input C apacitance - 562 - Coss Output Capacitance - 106 - Crss Reverse Transfer Capacitance VDS=8V, VGS=0V, f=1MHz - 75 - pF td(on) Turn-on Delay Time - 8.1 - tr Turn-on Rise Time - 9.95 - td(off) Turn-off Delay Time - 21.85 - tf Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6Ω - 5.35 - ns
  • Drain-Source Diode Characteristics IS Maximum Diode Forward Current - - 1.7 A VSD Drain-Source Diode Forward Voltage V GS=0V, IS=1.7A - - 1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% G S D RD VDD VOUTVIN RG VGEN Switching Test Circuit td(on) ton tr 90% 10% 50% 10%Input, VIN Output, VOUT td(off) toff tf 90% 10% Inverted 90% 50% Pulse Width Switching Waveforms

MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 3/4 8205A HSMC Product Specification TSSOP-8L Dimension Important Notice:

  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
  • HSMC reserves the right to make changes to its products without notice.
  • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Tel: 886-3-5983621~5 Fax: 886-3-5982931 0.25 C L Detail F Detail F A b e E1 E D R 0.15 Seating Plane Pin1 index 5678 S DIM Min. Max. A - 1.20 A1 0.05 0.15 b 0.19 0.3 C 0.09 0.20 D 2.90 3.10 E 6.20 6.60 E1 4.30 4.50 e 0.65 BSC L 0.45 0.75 S 0 o 8 o *: Typical, Unit: mm 8205A Marking: 2058A Year Code HG Month Code Note: Green label is used for pb-free packing Material:
  • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 8-Lead TSSOP-8L Plastic Surface Mounted Package

MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 4/4 8205A HSMC Product Specification Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) <3 oC/sec <3 oC/sec Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec Tsmax to TL - Ramp-up Rate <3oC/sec <3oC/sec Time maintained above: - Temperature (T - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240 oC +0/-5oC 260 oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6 oC/sec <6 oC/sec Time 25oC to Peak Temperature <6 minutes <8 minutes 3. Flow (wave) soldering (solder dipping) Products Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260oC ±5oC 10sec ±1sec Figure 1: Temperature profile tP tL Ramp-down Ramp-up Tsmax Tsmin Critical Zone TL to TP tS Preheat TL TP t 25oC to Peak Time Temperature